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US5116811A
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Cvd method for the formation of bi-containing superconducting thin films
Assignee: Oki Electric Industry Co Ltd
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Filing: 1989-09-14
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Granted: 1992-05-26
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Expires: 2009-09-14
Abstract
Abstract A method for forming a superconductive thin film according to the invention wherein a superconductive thin film of an oxide obtaining Bi (bismuth) is formed on an substrate by a chemical vapor deposition technique makes use of triphenyl bismuth, Bi-(C 6 H 5 ) 3 , as a gas source for bismuth. By this, the resultant superconductive thin film has a flat surface without damages, and good superconductive characteristics. Where the substrate is susceptible to oxidation, at least a mono-atomic layer of bismuth is formed on the substrate, after which the superconductive thin film is formed. Accordingly, stable transmission of a deposition gas is ensured with the substrate being prevented from oxidation.
Inventors
- 👤 Hitoshi Abe
- 👤 Tomohiro Nakamori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/22; C23C16/30; C23C16/40; C23C16/408; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/734
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
72 words
A method for forming a superconductive thin film on a heated substrate with a metal layer, comprising the steps of: forming said metal layer consisting of at least a mono-atomic layer of bismuth on said substrate; and forming said superconductive thin film of an oxide containing bismuth on said metal layer by a chemical vapor deposition technique using triphenyl bismuth Bi(C 6 H 5 ) 3 as a gas source for bismuth.
Claim 2
Independent Claim
72 words
A method for forming a superconductive thin film on a heated substrate with a metal layer, comprising the steps of: forming said metal layer consisting of at least a mono-atomic layer of bismuth on said substrate; and forming said superconductive thin film of an oxide containing bismuth on said metal layer by a chemical vapor deposition technique using triphenyl bismuth Bi(C 6 H 5 ) 3 as a gas source for bismuth.
Claim 3
Dependent Claim
60 words
a method for forming a superconductive thin film according to claim 1, wherein said superconductive thin film is a Bi-Sr-Ca-Cu-O thin film formed on said substrate by a chemical vapor deposition technique using starting gases and an oxygen gas, and said starting gases are Bi(C 6 H 5 ) 3 , Sr(DPM) 2 , Ca(DPM) 2 and Cu(DPM) 2 .
Claim 4
Dependent Claim
24 words
A method for forming a supercoductive thin film according to claim 2, wherein the deposition temperature is equal to or less than 750° C.
Claim 5
Dependent Claim
45 words
A method for forming a superconductive thin film according to claim 1, wherein said at least a mono-atomic layer of bismuth is formed on the substrate by a chemical vapor deposition technique using Bi-(C 6 H 5 ) 3 as a gas source for bismuth.
Claim 6
Independent Claim
103 words
A method for forming a superconductive thin film using a chemical vapor deposition technique on a substrate with a metal layer, comprising the steps of: disposing said substrate in a deposition vessel; forming said metal layer consisting of at least a monoatomic layer of bismuth on said substrate; preheating said substrate; introducing into said deposition vessel starting source gases of Bi-(C 6 H 5 ) 3 , Sr(DPM) 2 , Ca(DPM) 2 and Cu(DPM) 2 , wherein DPM is 2,2,6,6-tetramethyl-3,5-heptanedianate; and simultaneously introducing into said deposition vessel a source gas of oxygen whereby said superconductive thin film is formed on said metal layer.
Claim 7
Independent Claim
103 words
A method for forming a superconductive thin film using a chemical vapor deposition technique on a substrate with a metal layer, comprising the steps of: disposing said substrate in a deposition vessel; forming said metal layer consisting of at least a monoatomic layer of bismuth on said substrate; preheating said substrate; introducing into said deposition vessel starting source gases of Bi-(C 6 H 5 ) 3 , Sr(DPM) 2 , Ca(DPM) 2 and Cu(DPM) 2 , wherein DPM is 2,2,6,6-tetramethyl-3,5-heptanedianate; and simultaneously introducing into said deposition vessel a source gas of oxygen whereby said superconductive thin film is formed on said metal layer.
Claim 8
Dependent Claim
37 words
A method for forming a superconductive thin film according to claim 5, wherein said metal layer is formed by a chemical vapor deposition technique using Bi-(C 6 H 5 ) 3 as a gas source for bismuth.
Claim 9
Dependent Claim
29 words
A method for forming a superconductive thin film according to claim 5, wherein said step of preheating said substrate is effected at the time of forming said metal layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |