Patent US5112436A successfully refreshed from Google Patents.
US5112436A
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Method of forming planar vacuum microelectronic devices with self aligned anode
Assignee: Xerox Corp
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Filing: 1990-12-24
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Granted: 1992-05-12
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Expires: 2010-12-24
Abstract
Abstract A method for forming on a substrate a microelectronic device having a first and second element. According to the method, a first conductive layer is deposited on the surface. Next, a cap material is deposited, then the first element and a first element cap are formed from the first conductive layer and the cap material respectively. A sacrificial material is conformally deposited, then a second conductive layer is conformally deposited. The second conductive layer is anisotropically etched to form the second element. Finally, the sacrificial material is anisotropically etched.
Inventors
- 👤 Igor I. Bol
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:06
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J21/00; H01J21/02; H01J21/06; H01J21/10; H01J21/105
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
87 words
A method for forming on a substrate a microelectronic device having a first and a second element, comprising the steps of: a. depositing a first conductive layer on said substrate; b. depositing a cap material; c. forming said first element and the first element cap from said first conductive layer and said cap material, respectively; d. conformally depositing a sacrificial material; e. conformally depositing a second conductive layer; f. anisotropically etching said second conductive layer to form said second element; and g. anisotropically etching said sacrificial material.
Claim 2
Independent Claim
87 words
A method for forming on a substrate a microelectronic device having a first and a second element, comprising the steps of: a. depositing a first conductive layer on said substrate; b. depositing a cap material; c. forming said first element and the first element cap from said first conductive layer and said cap material, respectively; d. conformally depositing a sacrificial material; e. conformally depositing a second conductive layer; f. anisotropically etching said second conductive layer to form said second element; and g. anisotropically etching said sacrificial material.
Claim 3
Independent Claim
108 words
A method for forming on a substrate a microelectronic device having a first and a second element comprising the steps of: a. depositing a first sacrificial layer on said substrate; b. forming a ramp structure from said first sacrificial layer; c. depositing a first conductive layer on said substrate; d. depositing a cap material; e. forming said first element and the first element cap from said first conductive layer and said cap material, respectively; f. conformally depositing a second sacrificial material; f. conformally depositing a second conductive layer; g. anisotropically etching said second conductive layer to form said second element; and h. anisotropically etching said second sacrificial material.
Claim 4
Independent Claim
108 words
A method for forming on a substrate a microelectronic device having a first and a second element comprising the steps of: a. depositing a first sacrificial layer on said substrate; b. forming a ramp structure from said first sacrificial layer; c. depositing a first conductive layer on said substrate; d. depositing a cap material; e. forming said first element and the first element cap from said first conductive layer and said cap material, respectively; f. conformally depositing a second sacrificial material; f. conformally depositing a second conductive layer; g. anisotropically etching said second conductive layer to form said second element; and h. anisotropically etching said second sacrificial material.
Claim 5
Dependent Claim
15 words
The method according to claim 2, including the step of removing said first sacrificial material.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-12 | 1995-11-11 | 1996-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-12 | 1999-11-11 | 2000-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-12 | 2003-11-11 | 2004-05-12 | $7700.00 | Window Closed / Lapsed |