Patent US5111272A successfully refreshed from Google Patents.
US5111272A
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US
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Semiconductor device having element regions electrically isolated from each other
Assignee: Toshiba Corp
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Filing: 1991-02-07
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Granted: 1992-05-05
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Expires: 2011-02-07
Abstract
Abstract A semiconductor device of this invention is characterized in that one element region is electrically isolated from another element region adjacent thereto by forming a groove surrounding the one element region and a distance between the groove surrounding one element region and a groove surrounding the another element region is set to be equal to or larger than 3 μm.
Inventors
- 👤 Naoto Miyashita
- 👤 Koichi Takahashi
- 👤 Hironori Sonobe
- 👤 Mitsutoshi Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:47
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/0147; H10W10/061; H10W10/10; H10W10/17; H10W10/181; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
147 words
A semiconductor device comprising: at least two element regions; a first groove, formed to surround a first one of said at least two element regions, with a first inner surface; a second groove, formed to surround a second one of said at least two element regions which is closest to said first one of said at least two element regions, with a second inner surface; a field region between said first and second ones of said at least two element regions; a first oxide film, formed on said first and second inner surfaces of said first and second grooves, with a first thickness; and a second oxide film, formed on said field region, with a second thickness, wherein said first thickness equals said second thickness, and a distance between said first groove and said second groove is set to be equal to or greater than 3 μm.
Claim 2
Dependent Claim
147 words
A semiconductor device comprising: at least two element regions; a first groove, formed to surround a first one of said at least two element regions, with a first inner surface; a second groove, formed to surround a second one of said at least two element regions which is closest to said first one of said at least two element regions, with a second inner surface; a field region between said first and second ones of said at least two element regions; a first oxide film, formed on said first and second inner surfaces of said first and second grooves, with a first thickness; and a second oxide film, formed on said field region, with a second thickness, wherein said first thickness equals said second thickness, and a distance between said first groove and said second groove is set to be equal to or greater than 3 μm.
Claim 3
Dependent Claim
48 words
A semiconductor device according to claim 1, wherein said first and second oxide films have a film thickness of not greater than 9000 Å and are formed in each of said first and second grooves surrounding said first and second ones of said at least two element regions.
Claim 4
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein a width of each of said first and second grooves surrounding said first and second ones of said at least two element regions is 1 to 2 μm.
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said at least two element regions are formed in a wafer having a silicon-on-insulator structure.
Claim 6
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein bipolar transistors are formed in said at least two element regions.
Claim 7
Dependent Claim
34 words
A semiconductor device according to claim 1, wherein a polysilicon layer is buried in each of said first and second grooves surrounding said first and second ones of said at least two element regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |