Patent US3745701A successfully refreshed from Google Patents.
US5111269A
Expired / Lapsed
US
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Bipolar transistor structure containing a resistor which assures reduction in layout area
Assignee: Toshiba Corp
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Filing: 1991-04-03
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Granted: 1992-05-05
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Expires: 2011-04-03
Abstract
Abstract A N + -type buried layer is formed at the surface of a P-type semiconductor substrate so as to correspond to the region in which a bipolar transistor is to be formed. Formed on the semiconductor substrate surface containing the buried layer portion is a P-type epitaxial layer, in which an N-type well is formed which extends from the layer's surface to the buried layer. In the well, a first diffusion layer extending from the well's surface to the buried layer is formed as the collector. Also formed in the well is a P-type second diffusion layer, in which P + -type third and fourth diffusion layers are formed as a separate bases. An N + -type fifth diffusion layer is formed as an emitter between the third and fourth diffusion layers. A collector electrode, a base electrode, and an emitter electrode are taken from the first, third, and fifth diffusion layers, respectively, so that the fourth and fifth diffusion layers are connected to each other by an interconnection.
Inventors
- 👤 Kazunori Tsugaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:56
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/60; H10D84/611; H10D84/613; H10D84/615
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
326 words
A semiconductor device containing bipolar transistors, comprising: a semiconductor substrate of a first conductivity type; a buried layer formed at the surface of said semiconductor substrate so as to correspond to a region in which a bipolar transistor is to be formed; an epitaxial layer of the first conductivity type formed on said semiconductor substrate including said buried layer region; a well of a second conductivity type formed in said epitaxial layer so as to correspond to said buried layer region, the impurity atom concentration of which is lower than that in said buried layer; a first diffusion region of the second conductivity type formed so as to extend from the surface of said well to said buried layer, the impurity atom concentration of which is higher than that in said buried layer; a second diffusion region of the first conductivity type formed at the surface of said well in the vicinity of said first diffusion region, the impurity atom concentration of which is higher than that in said second conductivity type well; third and fourth diffusion regions of the first conductivity type each formed separately on opposite sides of said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region; a fifth diffusion region of the second conductivity type located between said third and fourth diffusion regions in said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region, and directly under which a resistor is formed so as to connect said third diffusion region with said fourth diffusion region; and an interconnection electrically connecting said fourth diffusion region with said fifth diffusion region; wherein said first diffusion region constitutes a collector, said third and fourth diffusion regions constitute bases, said fifth diffusion region constitutes an emitter, one of said bases and said emitter are connected with said interconnection, and said resistor is connected across said base and emitter.
Claim 2
Dependent Claim
326 words
A semiconductor device containing bipolar transistors, comprising: a semiconductor substrate of a first conductivity type; a buried layer formed at the surface of said semiconductor substrate so as to correspond to a region in which a bipolar transistor is to be formed; an epitaxial layer of the first conductivity type formed on said semiconductor substrate including said buried layer region; a well of a second conductivity type formed in said epitaxial layer so as to correspond to said buried layer region, the impurity atom concentration of which is lower than that in said buried layer; a first diffusion region of the second conductivity type formed so as to extend from the surface of said well to said buried layer, the impurity atom concentration of which is higher than that in said buried layer; a second diffusion region of the first conductivity type formed at the surface of said well in the vicinity of said first diffusion region, the impurity atom concentration of which is higher than that in said second conductivity type well; third and fourth diffusion regions of the first conductivity type each formed separately on opposite sides of said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region; a fifth diffusion region of the second conductivity type located between said third and fourth diffusion regions in said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region, and directly under which a resistor is formed so as to connect said third diffusion region with said fourth diffusion region; and an interconnection electrically connecting said fourth diffusion region with said fifth diffusion region; wherein said first diffusion region constitutes a collector, said third and fourth diffusion regions constitute bases, said fifth diffusion region constitutes an emitter, one of said bases and said emitter are connected with said interconnection, and said resistor is connected across said base and emitter.
Claim 3
Dependent Claim
37 words
A device according to claim 1, further comprising: a basic CMOS cell region containing a P-channel and/or an N-channel MOS transistor, which is formed outside and in the vicinity of said well region in said semiconductor substrate.
Claim 4
Dependent Claim
20 words
A device according to claim 1, wherein said first conductivity type is P-type and said second conductivity type is N-type.
Claim 5
Dependent Claim
20 words
A device according to claim 1, wherein said resistor is a bulk resistor formed directly below said fifth diffusion region.
Claim 6
Dependent Claim
280 words
A semiconductor device containing bipolar transistors, comprising: a P-type semiconductor substrate; an N + -type buried layer formed on said semiconductor substrate so as to correspond to a region in which a bipolar transistor is to be formed; a P-type epitaxial layer formed on the surface of said semiconductor substrate including said buried layer region; an N-type well formed in said epitaxial layer so as to correspond to said buried layer region, the impurity atom concentration of which is lower than that in said buried layer; an N + -type first diffusion region formed as a collector so as to extend from the surface of said well to said buried layer, the impurity atom concentration of which is higher than that in said buried layer; a P-type second diffusion region formed at the surface of said well in the vicinity of said first diffusion region, the impurity atom concentration of which is higher than that in said N-type well; P + type third and fourth diffusion regions each formed separately as bases on opposite sides of said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region; an N + -type fifth diffusion region located as an emitter between said third and fourth diffusion regions in said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region, and directly under which a resistor is formed so as to connect said third diffusion region with said fourth diffusion region; and an interconnection electrically connecting said fourth diffusion region with said fifth diffusion region so that said resistor may be connected across said base and emitter.
Claim 7
Dependent Claim
280 words
A semiconductor device containing bipolar transistors, comprising: a P-type semiconductor substrate; an N + -type buried layer formed on said semiconductor substrate so as to correspond to a region in which a bipolar transistor is to be formed; a P-type epitaxial layer formed on the surface of said semiconductor substrate including said buried layer region; an N-type well formed in said epitaxial layer so as to correspond to said buried layer region, the impurity atom concentration of which is lower than that in said buried layer; an N + -type first diffusion region formed as a collector so as to extend from the surface of said well to said buried layer, the impurity atom concentration of which is higher than that in said buried layer; a P-type second diffusion region formed at the surface of said well in the vicinity of said first diffusion region, the impurity atom concentration of which is higher than that in said N-type well; P + type third and fourth diffusion regions each formed separately as bases on opposite sides of said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region; an N + -type fifth diffusion region located as an emitter between said third and fourth diffusion regions in said second diffusion region, the impurity atom concentration of which is higher than that in said second diffusion region, and directly under which a resistor is formed so as to connect said third diffusion region with said fourth diffusion region; and an interconnection electrically connecting said fourth diffusion region with said fifth diffusion region so that said resistor may be connected across said base and emitter.
References Cited (Backward Citations)
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