Patent US5111100A successfully refreshed from Google Patents.
US5111100A
Expired / Lapsed
US
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Surface acoustic wave device and method for fabricating same
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1991-01-03
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Granted: 1992-05-05
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Expires: 2011-01-03
Abstract
Abstract A surface acoustic wave device is disclosed, by which it is possible to improve characteristics of a system suitable for suppressing narrow frequency band interference, which is useful for a spread spectrum communication system, and to increase the signal intensity at the detecting portion without changing characteristics of the filter portion. In a surface acoustic wave element, in a p conductivity type Si epitaxial layer 2 formed on a p+ conductivity type Si monocrystal substrate 1 the epitaxial layer on the siganl detecting portion is formed so as to be thinner than the other portion by means of a buried layer. In this way, even with a same intensity of the input signal at the transducer, the loss of SAW is reduced and as the result the intensity of the detected signal is increased. By the present invention it is possible to increase the signal intensity at the detecting portion without changing characteristics of the filter portion.
Inventors
- 👤 Osamu Noguchi
- 👤 Kazuyoshi Sugai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:49
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/08; H03H9/00; H03H9/02; H03H9/02535; H03H9/02543; H03H9/02566
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
241 words
A surface acoustic wave device comprising: a multi-layered structure including a first conductivity type high impurity concentration silicon substrate, a first conductivity type silicon epitaxial layer, an insulating layer and a piezo-electric layer; a group of input transducers formed on said piezo-electric layer and classifying an input signal in frequency to generate a plurality of surface acoustic waves at respective frequencies and propagating along respective propagation paths which each correspond to a respective one of said input transducers; a group of output transducers formed on said piezo-electric layer, each of the output transducers obtaining an output signal from a surface acoustic wave propagated along a respective one of the propagation paths; a group of gate electrodes formed on said piezo-electric layer, each of them corresponding to a respective one of said propagation paths; a group of first pn diode arrays formed on the surface side of said first conductivity type silicon epitaxial layer between the input and the output transducers, and each corresponding to a respective one of said propagation paths; and a group of second pn diode arrays formed on the surface side of said first conductivity type silicon epitaxial layer on a side of said input transducers opposite from said group of first pn diode arrays; wherein said first conductivity type silicon epitaxial layer is thinner in the region of the group of second pn diode arrays than in the region of the group of first pn diode arrays.
Claim 2
Dependent Claim
241 words
A surface acoustic wave device comprising: a multi-layered structure including a first conductivity type high impurity concentration silicon substrate, a first conductivity type silicon epitaxial layer, an insulating layer and a piezo-electric layer; a group of input transducers formed on said piezo-electric layer and classifying an input signal in frequency to generate a plurality of surface acoustic waves at respective frequencies and propagating along respective propagation paths which each correspond to a respective one of said input transducers; a group of output transducers formed on said piezo-electric layer, each of the output transducers obtaining an output signal from a surface acoustic wave propagated along a respective one of the propagation paths; a group of gate electrodes formed on said piezo-electric layer, each of them corresponding to a respective one of said propagation paths; a group of first pn diode arrays formed on the surface side of said first conductivity type silicon epitaxial layer between the input and the output transducers, and each corresponding to a respective one of said propagation paths; and a group of second pn diode arrays formed on the surface side of said first conductivity type silicon epitaxial layer on a side of said input transducers opposite from said group of first pn diode arrays; wherein said first conductivity type silicon epitaxial layer is thinner in the region of the group of second pn diode arrays than in the region of the group of first pn diode arrays.
Claim 3
Dependent Claim
205 words
A surface acoustic wave device comprising: a first conductivity type high impurity concentration silicon substrate; a first conductivity type silicon epitaxial layer; a first conductivity type high impurity concentration buried layer formed partially in said epitaxial layer; first pn diode array means formed on the surface side of said first conductivity type silicon epitaxial layer in a region spaced from said buried layer; second pn diode array means formed on the surface side of said epitaxial layer above said buried layer; an insulating layer formed on said epitaxial layer; a piezo-electric layer formed further on said insulating layer; first gate electrode means formed on said piezo-electric layer above said first pn diode array means; second gate electrode means formed on said piezo-electric layer above said second pn diode array means; input transducer means formed on said piezo-electric layer between said first and said second gate electrode means; and output transducer means formed on said piezo-electric layer on a side of said first gate electrode means opposite from said input transducer means; wherein a portion of said epitaxial layer below said first pn diode array means is thicker than a portion of said epitaxial layer below said second pn diode means and above said buried layer.
Claim 4
Dependent Claim
205 words
A surface acoustic wave device comprising: a first conductivity type high impurity concentration silicon substrate; a first conductivity type silicon epitaxial layer; a first conductivity type high impurity concentration buried layer formed partially in said epitaxial layer; first pn diode array means formed on the surface side of said first conductivity type silicon epitaxial layer in a region spaced from said buried layer; second pn diode array means formed on the surface side of said epitaxial layer above said buried layer; an insulating layer formed on said epitaxial layer; a piezo-electric layer formed further on said insulating layer; first gate electrode means formed on said piezo-electric layer above said first pn diode array means; second gate electrode means formed on said piezo-electric layer above said second pn diode array means; input transducer means formed on said piezo-electric layer between said first and said second gate electrode means; and output transducer means formed on said piezo-electric layer on a side of said first gate electrode means opposite from said input transducer means; wherein a portion of said epitaxial layer below said first pn diode array means is thicker than a portion of said epitaxial layer below said second pn diode means and above said buried layer.
Claim 5
Dependent Claim
29 words
A surface acoustic wave device according to claim 2, wherein said epitaxial layer includes a first epitaxial layer and a second epitaxial layer formed on said first epitaxial layer.
Claim 6
Dependent Claim
45 words
A surface acoustic wave device according to claim 2, wherein the thickness of said epitaxial layer, measured from an upper surface of said first conductivity type high impurity concentration buried layer to an upper surface of said epitaxial layer, is 1 μm to 5 μm.
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| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
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