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Patent US5111052A successfully refreshed from Google Patents.
US5111052A
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US
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Radiation sensor and a radiation detecting apparatus using the same
Assignee: Panasonic Holdings Corp
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Filing: 1989-11-09
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Granted: 1992-05-05
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Expires: 2009-11-09
Abstract
Abstract A radiation sensor for the measurement of photo energies of incident radiation is disclosed which comprises a semiconductor substrate sensitive to photons of the incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of the substrate, or the common electrode being disposed on one surface of the substrate and the split electrode being disposed on the other surface of the substrate at a diagonal position to the common electrode. Also disclosed is a radiation detecting apparatus using the above-mentioned radiation sensor.
Inventors
- 👤 Tetsuro Ohtsuchi
- 👤 Hiroshi Tsutsui
- 👤 Koichi Ohmori
- 👤 Sueki Baba
- 👤 Hiromasa Funakoshi
- 👤 Toshiyuki Kawara
- 👤 Yoshiyuki Yoshizumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:07
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; G; G01; G01T; G01T1/00; G01T1/16; G01T1/24; G01T1/241; H10F30/301; H10F77/00; H10F77/20
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
79 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of said substrate, wherein said at least one common electrode and said at least one split electrode comprise means for receiving an applied voltage so as to detect a current produced by said incident radiation.
Claim 2
Dependent Claim
79 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of said substrate, wherein said at least one common electrode and said at least one split electrode comprise means for receiving an applied voltage so as to detect a current produced by said incident radiation.
Claim 3
Dependent Claim
25 words
A radiation sensor according to claim 1, wherein a combination of a common electrode and a split electrode is disposed in parallel with each other.
Claim 4
Dependent Claim
35 words
A radiation sensor according to claim 1, wherein a common electrode is disposed at the center of said surface of the substrate and two split electrodes are disposed on both sides of said common electrode.
Claim 5
Dependent Claim
21 words
A radiation sensor according to claim 3, wherein said two split electrodes are shifted to each other by a half pitch.
Claim 6
Dependent Claim
35 words
A radiation sensor according to claim 1, wherein a split electrode is disposed at the center of said surface of the substrate and two common electrodes are disposed on both sides of said split electrode.
Claim 7
Dependent Claim
55 words
A radiation sensor according to claim 1, wherein a first combination of a common electrode and a split electrode is disposed on one surface of said substrate and a second combination of a common electrode and a split electrode is disposed on the other surface of said substrate symmetrically with said first combination of electrodes.
Claim 8
Dependent Claim
34 words
A radiation sensor according to claim 1, wherein a passivation film is formed on the radiation-sensitive area of the substrate between said at least one common electrode and said at least one split electrode.
Claim 9
Dependent Claim
39 words
A radiation sensor according to claim 1, wherein said at least one common electrode has notches to form a symmetric distribution of the electric field between said at least one common electrode and said at least one split electrode.
Claim 10
Dependent Claim
32 words
A radiation sensor according to claim 1, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, GaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 11
Dependent Claim
93 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, at least one common electrode disposed on one surface of said substrate, and at least one split electrode disposed on the other surface of said substrate at a diagonal position to said at least one common electrode, wherein said at least one common electrode and said at least one split electrode comprises means for receiving an applied voltage so as to detect a current produced by said incident radiation.
Claim 12
Dependent Claim
93 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, at least one common electrode disposed on one surface of said substrate, and at least one split electrode disposed on the other surface of said substrate at a diagonal position to said at least one common electrode, wherein said at least one common electrode and said at least one split electrode comprises means for receiving an applied voltage so as to detect a current produced by said incident radiation.
Claim 13
Dependent Claim
40 words
A radiation sensor according to claim 10, wherein a common electrode is disposed on one surface of said substrate and a split electrode is disposed on the other surface of said substrate at a diagonal position to said common electrode.
Claim 14
Dependent Claim
44 words
A radiation sensor according to claim 10, wherein a common electrode is disposed at the center of one surface of said substrate and two split electrodes are disposed on the other surface of said substrate at positions on both sides of said common electrode.
Claim 15
Dependent Claim
21 words
A radiation sensor according to claim 12, wherein said two split electrodes are shifted to each other by a half pitch.
Claim 16
Dependent Claim
44 words
A radiation sensor according to claim 10, wherein a split electrode is disposed at the center of one surface of said substrate and two common electrodes are disposed on the other surface of said substrate at positions on both sides of said split electrode.
Claim 17
Dependent Claim
20 words
A radiation sensor according to claim 10, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 18
Dependent Claim
39 words
A radiation sensor according to claim 10, wherein said at least one common electrode has notches to form a symmetric distribution of the electric field between the at least one common electrode and the at least one split electrode.
Claim 19
Dependent Claim
32 words
A radiation sensor according to claim 10, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, GaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 20
Dependent Claim
104 words
A radiation detecting apparatus comprising a radiation sensor and a pulse amplifier, wherein said radiation sensor includes a semiconductor substrate sensitive to photons of incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of said substrate, and wherein the radiation sensitive area of said sensor is limited by the disposition of a radiation shield in such a manner that the transit time of electrons or holes among electric charges generated by said incident radiation is equal to or greater than the reciprocal time of a cutoff frequency of said pulse amplifier.
Claim 21
Dependent Claim
104 words
A radiation detecting apparatus comprising a radiation sensor and a pulse amplifier, wherein said radiation sensor includes a semiconductor substrate sensitive to photons of incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of said substrate, and wherein the radiation sensitive area of said sensor is limited by the disposition of a radiation shield in such a manner that the transit time of electrons or holes among electric charges generated by said incident radiation is equal to or greater than the reciprocal time of a cutoff frequency of said pulse amplifier.
Claim 22
Dependent Claim
118 words
A radiation detecting apparatus comprising a radiation sensor and a pulse amplifier, wherein said radiation sensor includes a semiconductor substrate sensitive to photons of incident radiation, at least one common electrode disposed on one surface of said substrate, and at least one split electrode disposed on the other surface of said substrate at a diagonal position to said at least one common electrode, and wherein the radiation sensitive area of said sensor is limited by the disposition of a radiation shield in such a manner that the transit time of electrons or holes among electric charges generated by said incident radiation is equal to or greater than the reciprocal time of a cutoff frequency of said pulse amplifier.
Claim 23
Dependent Claim
118 words
A radiation detecting apparatus comprising a radiation sensor and a pulse amplifier, wherein said radiation sensor includes a semiconductor substrate sensitive to photons of incident radiation, at least one common electrode disposed on one surface of said substrate, and at least one split electrode disposed on the other surface of said substrate at a diagonal position to said at least one common electrode, and wherein the radiation sensitive area of said sensor is limited by the disposition of a radiation shield in such a manner that the transit time of electrons or holes among electric charges generated by said incident radiation is equal to or greater than the reciprocal time of a cutoff frequency of said pulse amplifier.
Claim 24
Dependent Claim
56 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a common electrode disposed at the center of one surface of said substrate, and two split electrodes disposed on the same surface of said substrate on both sides of said common electrode.
Claim 25
Dependent Claim
56 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a common electrode disposed at the center of one surface of said substrate, and two split electrodes disposed on the same surface of said substrate on both sides of said common electrode.
Claim 26
Dependent Claim
23 words
A radiation sensor according to claim 20, wherein said two split electrodes are shifted with respect to each other by a half pitch.
Claim 27
Dependent Claim
20 words
A radiation sensor according to claim 20, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 28
Dependent Claim
34 words
A radiation sensor according to claim 20, wherein said common electrode has notches located thereon, said notches forming a symmetric distribution of the electric field between the common electrode and the two split electrodes.
Claim 29
Dependent Claim
32 words
A radiation sensor according to claim 20, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, CaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 30
Dependent Claim
56 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a split electrode disposed at the center of one surface of said substrate, and two common electrodes disposed on the same surface of said substrate on both sides of said split electrode.
Claim 31
Dependent Claim
56 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a split electrode disposed at the center of one surface of said substrate, and two common electrodes disposed on the same surface of said substrate on both sides of said split electrode.
Claim 32
Dependent Claim
20 words
A radiation sensor according to claim 25, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 33
Dependent Claim
37 words
A radiation sensor according to claim 25, wherein at least one of the common electrodes has notches located thereon, said notches forming a symmetric distribution of the electric field between said common electrode and the split electrode.
Claim 34
Dependent Claim
32 words
A radiation sensor according to claim 25, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, CaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 35
Dependent Claim
73 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a first combination of a common electrode and a split electrode which is disposed on one surface of a semiconductor substrate sensitive to photons of said incident radiation, and a second combination of a common electrode and a split electrode which is disposed on the other surface of said substrate symmetrically with respect to said first combination of electrodes.
Claim 36
Dependent Claim
73 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a first combination of a common electrode and a split electrode which is disposed on one surface of a semiconductor substrate sensitive to photons of said incident radiation, and a second combination of a common electrode and a split electrode which is disposed on the other surface of said substrate symmetrically with respect to said first combination of electrodes.
Claim 37
Dependent Claim
20 words
A radiation sensor according to claim 29, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 38
Dependent Claim
48 words
A radiation sensor according to claim 29, wherein said common electrode is at least one of said first and second combinations has notches located thereon, said notches forming a symmetric distribution of the electric field between said common electrode and the corresponding split electrode in the same combination.
Claim 39
Dependent Claim
31 words
A radiation sensor according to claim 29, wherein said substrate is made of a material selected from the group consisting of CdTe, GaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 40
Dependent Claim
63 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a common electrode disposed at the center of one surface of said substrate, and two split electrodes disposed on the other surface of said substrate at diagonal positions to said common electrode on both sides of said common electrode.
Claim 41
Dependent Claim
63 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a common electrode disposed at the center of one surface of said substrate, and two split electrodes disposed on the other surface of said substrate at diagonal positions to said common electrode on both sides of said common electrode.
Claim 42
Dependent Claim
23 words
A radiation sensor according to claim 33, wherein said two split electrodes are shifted with respect to each other by a half pitch.
Claim 43
Dependent Claim
20 words
A radiation sensor according to claim 33, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 44
Dependent Claim
34 words
A radiation sensor according to claim 33, wherein said common electrode has notches located thereon, said notches forming a symmetric distribution of the electric field between the common electrode and the two split electrode.
Claim 45
Dependent Claim
32 words
A radiation sensor according to claim 33, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, GaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
Claim 46
Dependent Claim
63 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a split electrode disposed at the center of one surface of said substrate, and two common electrodes disposed on the other surface of said substrate at diagonal positions to said split electrode on both sides of said split electrode.
Claim 47
Dependent Claim
63 words
A radiation sensor for the measurement of photon energies of incident radiation, which comprises a semiconductor substrate sensitive to photons of said incident radiation, a split electrode disposed at the center of one surface of said substrate, and two common electrodes disposed on the other surface of said substrate at diagonal positions to said split electrode on both sides of said split electrode.
Claim 48
Dependent Claim
20 words
A radiation sensor according to claim 38, wherein a passivation film is formed on the radiation-sensitive area of the substrate.
Claim 49
Dependent Claim
37 words
A radiation sensor according to claim 38, wherein at least one of the common electrodes has notches located thereon, said notches forming a symmetric distribution of the electric field between said common electrode and the split electrode.
Claim 50
Dependent Claim
32 words
A radiation sensor according to claim 38, wherein said substrate is made of a semiconductor material selected from the group consisting of CdTe, GaAs, GaSe, HgI 2 , CdSe, Si, and Ge.
References Cited (Backward Citations)
JPS63117286A
Cited
US4937453A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |