US5108939A
Expired / Lapsed
US
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Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
Assignee: National Semiconductor Corp
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Filing: 1990-10-16
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Granted: 1992-04-28
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Expires: 2010-10-16
Abstract
Abstract A method and structure for forming in an EEPROM memory transistor a tunnel dielectric region having an extremely small surface area. A floating gate region is formed in the conventional manner above a gate dielectric layer. The drain region is exposed utilizing photolithographic techniques and the gate dielectric removed therefrom. A thin layer of tunnel dielectric is then formed on the exposed drain region. A thin layer of polycrystalline silicon is then formed and etched in order to create very narrow floating gate extensions of polycrystalline silicon along the edge of the previously formed floating gate. The floating gate extension formed in this manner which overlies the drain region is separated from the drain region by thin tunnel dielectric. A dielectric is then formed on the device in order to provide a dielectric over the drain region which has a greater thickness than the tunnel dielectric underlying the floating gate extension.
Inventors
- 👤 Martin H. Manley
- 👤 Michael J. Hart
- 👤 Philip J. Cacharelis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/0133; H10B; H10B69/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
245 words
A method for forming a semiconductor device having a first and a second source/drain region, a channel having a second side adjacent said second source/drain region and a second side adjacent said second source/drain region, a floating gate electrode, and a tunnel dielectric, comprising the steps of: forming a gate dielectric layer on a semiconductor substrate; forming a floating gate electrode on said gate dielectric layer; forming a floating gate electrode on said gate dielectric source/drain region; forming a floating gate electrode extension on said tunnel dielectric adjacent to at least that portion of said floating gate electrode on said first side of said channel, comprising the steps of: forming a first dielectric layer on the sides and top of said floating gate electrode; forming said floating gate electrode extension at least on said side of said floating gate electrode adjacent said first source/drain region such that said region is not electrically coupled to said floating gate electrode; forming a second dielectric layer above at least said floating gate electrode extension; patterning said first and second dielectric layers, floating gate electrode, and floating gate electrode extension so as to expose an edge of said dielectric layers, floating gate electrode, and floating gate electrode extension; and forming an electrical connection region to electrically couple said floating gate electrode and said floating gate electrode extension; and forming a thicker gate dielectric layer on that portion of said first source/drain not covered by said floating gate electrode extension.
Claim 2
Independent Claim
245 words
A method for forming a semiconductor device having a first and a second source/drain region, a channel having a second side adjacent said second source/drain region and a second side adjacent said second source/drain region, a floating gate electrode, and a tunnel dielectric, comprising the steps of: forming a gate dielectric layer on a semiconductor substrate; forming a floating gate electrode on said gate dielectric layer; forming a floating gate electrode on said gate dielectric source/drain region; forming a floating gate electrode extension on said tunnel dielectric adjacent to at least that portion of said floating gate electrode on said first side of said channel, comprising the steps of: forming a first dielectric layer on the sides and top of said floating gate electrode; forming said floating gate electrode extension at least on said side of said floating gate electrode adjacent said first source/drain region such that said region is not electrically coupled to said floating gate electrode; forming a second dielectric layer above at least said floating gate electrode extension; patterning said first and second dielectric layers, floating gate electrode, and floating gate electrode extension so as to expose an edge of said dielectric layers, floating gate electrode, and floating gate electrode extension; and forming an electrical connection region to electrically couple said floating gate electrode and said floating gate electrode extension; and forming a thicker gate dielectric layer on that portion of said first source/drain not covered by said floating gate electrode extension.
Claim 3
Dependent Claim
33 words
A method as in claim 1 wherein said floating gate electrode extension is formed on said second source/drain side of said floating gate electrode and said first source/drain side of said gate electrode.
Claim 4
Dependent Claim
20 words
A method as in claim 1 wherein said floating gate electrode and said floating gate electrode extension comprise polycrystalline silicon.
Claim 5
Dependent Claim
46 words
A method as in claim 1 wherein said step of forming said floating gate electrode extension comprises the steps of: forming a layer of conductive material on the top of said device; and etching said layer of conductive material, thereby leaving said floating gate electrode extension.
Claim 6
Dependent Claim
15 words
A method as in claim 4 wherein said layer of conductive material comprises polycrystalline silicon.
Claim 7
Dependent Claim
17 words
A method as in claim 4 wherein said step of etching comprises the step of anisotropically etching.
Claim 8
Dependent Claim
17 words
A method as in claim 5 wherein said step of etching comprises the step of anisotropically etching.
Claim 9
Dependent Claim
38 words
A method as in claim 1 which further comprises the steps of: forming an intergate dielectric layer over said floating gate electrode and said floating gate electrode extension; and forming a control gate over said intergate dielectric layer.
Claim 10
Dependent Claim
76 words
A method as in claim 1 wherein said step of patterning said dielectric layer, floating gate electrode, and floating gate electrode extension so as to expose an edge of said dielectric layer, floating gate electrode, and floating gate electrode extension comprises the step of exposing an edge of said dielectric layer, floating gate electrode, and floating gate electrode extension in a direction substantially parallel to said channel region extending between said first and second source/drain regions.
Claim 11
Dependent Claim
41 words
A method as in claim 1 wherein said step of forming a dielectric layer above at least said floating gate electrode extension comprises the step of forming a dielectric layer also above at least a portion of said first source/drain region.
Claim 12
Dependent Claim
42 words
A method as in claim 10 wherein said step of forming an electrical connection region comprises the step of forming an electrical connection region also above at least a portion of said dielectric layer above said portion of said first source/drain region.
Claim 13
Dependent Claim
90 words
A method as in claim 1 wherein said step of forming an electrical connection region comprises the steps of: forming a layer of electrically conductive material such that it is in electrical contact with at least a portion of said floating gate electrode and at least a portion of said floating gate electrode extension; and patterning said layer of electrically conductive material such that is remains in electrical connection with at least a portion of said floating gate electrode and at least a portion of said floating gate electrode extension.
Claim 14
Dependent Claim
23 words
A method as in claim 12 wherein said step of patterning comprises the step of anisotropically etching said layer of electrically conductive material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |