Patent US3049903A successfully refreshed from Google Patents.
Patent US5108779A successfully refreshed from Google Patents.
US5108779A
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US
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Diamond crystal growth process
Assignee: General Electric Co
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Filing: 1990-12-24
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Granted: 1992-04-28
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Expires: 2010-12-24
Abstract
Abstract The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.
Inventors
- 👤 Steven M. Gasworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:36
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/02; C30B29/04
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
80 words
A method for making diamond by a chemical vapor deposition process, comprising: (a) exposing a movable substrate to a first chamber of an apparatus, said first chamber containing a stream of one or more gases containing carbon under conditions effective for diamond deposition, and (b) moving said substrate to a second chamber of said apparatus, said second chamber containing a stream of one or more gases substantially free of carbon under conditions effective for removing non-diamond carbon from said substrate.
Claim 2
Independent Claim
80 words
A method for making diamond by a chemical vapor deposition process, comprising: (a) exposing a movable substrate to a first chamber of an apparatus, said first chamber containing a stream of one or more gases containing carbon under conditions effective for diamond deposition, and (b) moving said substrate to a second chamber of said apparatus, said second chamber containing a stream of one or more gases substantially free of carbon under conditions effective for removing non-diamond carbon from said substrate.
Claim 3
Dependent Claim
44 words
The method of claim 1 wherein the conditions of said first chamber which is effective for diamond deposition include a filament having a temperature between about 2000 deg. C and about 2500 deg. C and a hydrocarbon-rich gas mixture comprising hydrogen and a hydrocarbon.
Claim 4
Dependent Claim
10 words
The method of claim 2 wherein the hydrocarbon is methane.
Claim 5
Dependent Claim
20 words
The method of claim 3 wherein the hydrocarbon-hydrogen gas mixture comprises from about 2 to about 25 volume percent hydrocarbon.
Claim 6
Independent Claim
36 words
The method of 2 wherein the conditions of said second chamber is effective for removing non-diamond carbon includes hydrogen gas and a filament having a temperature between about 2000 deg. C and about 2500 deg. C.
Claim 7
Independent Claim
36 words
The method of 2 wherein the conditions of said second chamber is effective for removing non-diamond carbon includes hydrogen gas and a filament having a temperature between about 2000 deg. C and about 2500 deg. C.
Claim 8
Dependent Claim
19 words
The method as recited in claim 1 further comprising limiting the number of diamond nucleation sites on said substrate.
Claim 9
Dependent Claim
27 words
The method of claim 1 wherein the exposure time of said substrate to each of said first and second chambers of said apparatus is not the same.
Claim 10
Dependent Claim
35 words
The method of claim 7 wherein the exposure time of said substrate to said first chamber of said apparatus is longer than the exposure time of said substrate to said second chamber of said apparatus.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |