US5108540A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for epitaxial growth from the vapor phase of semiconductor materials
Assignee: US Philips Corp
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Filing: 1988-12-06
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Granted: 1992-04-28
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Expires: 2008-12-06
Abstract
Abstract A method for carrying out epitaxial growth from the vapor phase of layers of semiconductor materials on semiconductor substrates, in a chamber being mainly constituted by a tube containing a susceptor for the substrate, in which tube gaseous components are circulated from one end to the other at a pressure and a temperature suitable to obtain the epitaxial growth of the monocrystalline layers on the substrate. The temperature of the wall of the chamber opposite to the susceptor, this wall being designated as the ceiling of the chamber is regulated, to produce variations of the deposition profile of the epitaxial layer formed on the substrate. Application: manufacture of discrete components of III-V semiconductor materials.
Inventors
- 👤 Peter M. Frijlink
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:20
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B25/10; C30B25/16
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
191 words
A method for depositing epitaxy layers of semiconductor materials from the vapor phase on a semiconductor substrate, said method comprising positioning said substrate on a susceptor located at the inner surface of a lower wall portion of a hollow horizontally elongated reactor comprising a horizontal wall portion, an upper wall portion and a lower wall portion opposite to said upper wall portion and two opposing open end portions, providing a flow of gaseous compounds, for forming said epitaxy layers on said substrate, through said reactor along an axis joining said open end portions at a temperature and pressure suitable for causing epitaxial growth of monocrystalline layers of said semiconductor material on said substrate while rotating said substrate about an axis intersecting said substrate and said upper and lower wall portions and while only heating said upper wall portion, in a non-uniform manner, so as to produce variations in the profile of the deposition of said epitaxial layer along an axis parallel to the direction of flow of said gaseous compounds in addition to those that would have been present in the absence of such heating and if such substrate was stationary.
Claim 2
Independent Claim
191 words
A method for depositing epitaxy layers of semiconductor materials from the vapor phase on a semiconductor substrate, said method comprising positioning said substrate on a susceptor located at the inner surface of a lower wall portion of a hollow horizontally elongated reactor comprising a horizontal wall portion, an upper wall portion and a lower wall portion opposite to said upper wall portion and two opposing open end portions, providing a flow of gaseous compounds, for forming said epitaxy layers on said substrate, through said reactor along an axis joining said open end portions at a temperature and pressure suitable for causing epitaxial growth of monocrystalline layers of said semiconductor material on said substrate while rotating said substrate about an axis intersecting said substrate and said upper and lower wall portions and while only heating said upper wall portion, in a non-uniform manner, so as to produce variations in the profile of the deposition of said epitaxial layer along an axis parallel to the direction of flow of said gaseous compounds in addition to those that would have been present in the absence of such heating and if such substrate was stationary.
Claim 3
Dependent Claim
52 words
A method as claimed in claim 1, characterized in that the temperature of the upper wall portion is regulated so as to obtain for the epitaxial layer, when the substrate is immovable, a profile of deposition which is convex in the direction at right angles to the flow of the gaseous compounds.
Claim 4
Dependent Claim
48 words
A method as claimed in claim 1 characterized in that the upper wall portion of the horizontally elongated reactor is heated by means of heating resistors and in that the regulation of the temperature of the upper wall portion is obtained by controlling the temperature of these resistors.
Claim 5
Dependent Claim
64 words
A method as claimed in claim 1 characterized in that the temperature of said upper wall portion is so regulated as to obtain a linear uniform decrease of the rate of growth of said epitaxy layers in a direction parallel to the direction of flow of the gaseous compounds parallel to the longitudinal axis of the horizontally elongated reactor when the substrate is immovable.
Claim 6
Dependent Claim
68 words
A method as claimed in claim 11 characterized in that the temperature of the upper wall portion is regulated so as to obtain, if the substrate was stationary, an epitaxial layer having a diametrically antisymmetrical layer thickness profile with respect to an axis intersecting the center of said substrate, said upper wall portion and said lower wall portion and extending along an axis intersecting said open end portions.
Claim 7
Independent Claim
57 words
A method as claimed in claims 2, 4 or 5, characterized in that the substrate is subjected to a rotation about an axis at right angles to its plane at the center of antisymmetry of the profile of the epitaxial layer obtained in the absence of rotation, said antisymmetry being relative to the center of said substrate.
Claim 8
Dependent Claim
46 words
A method as claimed in claim 1 characterized in that it is used in the manufacture of epitaxial layers of materials of the III-V group on a substrate of a material of the group III-V employing organometallic compounds to obtain epitaxial layers having a uniform thickness.
Claim 9
Dependent Claim
46 words
A method as claimed in claim 1 characterized in that it is used in the manufacture of epitaxial layers of materials of the III-V group on a substrate of a material of the group III-V employing organometallic compounds to obtain epitaxial layers having a homogeneous properties.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-28 | 1995-10-28 | 1996-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-28 | 1999-10-28 | 2000-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-28 | 2003-10-28 | 2004-04-28 | $7700.00 | Window Closed / Lapsed |