US5105247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Quantum field effect device with source extension region formed under a gate and between the source and drain regions
Assignee: Individual
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Filing: 1990-08-03
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Granted: 1992-04-14
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Expires: 2010-08-03
Abstract
Abstract Semiconductor devices having at least three terminals and a single PN junction using quantum-effect tunneling for the primary conduction modes, including gates 32 and 34, drains 28 and 30, and sources 24 and 26, with the capability of operation in a unidirectional mode with implicit well taps or in bidirectional mode for pass gates.
Inventors
- 👤 Marion E. Cavanaugh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:54
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/211
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
167 words
A quantum field effect transistor device comprising: a semiconductor body region of a first conductivity type, a source region in said body region of said first conductivity type, said source having a dopant concentration on the order of 10 20 atoms per cubic centimeter, a drain region in said body region of a second conductivity type opposite to said first conductivity type, said drain having a dopant concentration on the order of 10 20 atoms per cubic centimeter, said source including a source extension with a dopant concentration on the order of 10 19 atoms per cubic centimeter which contacts said drain region and forms a PN junction therewith, a gate adjacent to said PN junction, means for forward biasing said PN junction, and means for voltage biasing said gate, modulating the conductivity of said source and thereby modulating the width of said PN junction so that carrier tunneling through said PN junction is controlled between said source and said drain with said PN junction forward biased.
Claim 2
Dependent Claim
167 words
A quantum field effect transistor device comprising: a semiconductor body region of a first conductivity type, a source region in said body region of said first conductivity type, said source having a dopant concentration on the order of 10 20 atoms per cubic centimeter, a drain region in said body region of a second conductivity type opposite to said first conductivity type, said drain having a dopant concentration on the order of 10 20 atoms per cubic centimeter, said source including a source extension with a dopant concentration on the order of 10 19 atoms per cubic centimeter which contacts said drain region and forms a PN junction therewith, a gate adjacent to said PN junction, means for forward biasing said PN junction, and means for voltage biasing said gate, modulating the conductivity of said source and thereby modulating the width of said PN junction so that carrier tunneling through said PN junction is controlled between said source and said drain with said PN junction forward biased.
Claim 3
Dependent Claim
74 words
The device of claim 1 wherein said source is a shallow dopant region on the order of 1000 Angstroms in depth, said drain is a shallow dopant region on the order of 1000 Angstroms in depth, said source extension is a shallow dopant region approximately 100 Angstroms in depth, and is adjacent to said surface of said semiconductor body, and said gate is a thin layer on the order of 1000 Angstroms in thickness.
Claim 4
Dependent Claim
39 words
The device of claim 1 wherein said body region includes a well region which is a shallow region on the order of 0.5 micron deep, and the surface dimensions are at least large enough to contain said drain region.
Claim 5
Dependent Claim
28 words
The device of claim 1 wherein the region between said gate and said source extension is an insulating layer and has a thickness of 10 to 50 Angstroms.
Claim 6
Dependent Claim
50 words
The device of claim 1 wherein the region between said gate and said source extension is a semiconductive region so that a Schottky diode is formed above said source extension and forms a depleted region thin enough, on the order of 10 to 200 Angstroms, to modulate said source extension.
Claim 7
Dependent Claim
37 words
The device of claim 1 wherein said source extension has a dopant concentration so that said device is of the depletion mode type and is conductive when said gate and said source are at the same voltage.
Claim 8
Dependent Claim
30 words
The device of claim 1 wherein said device can be made less conductive by biasing said gate with a suitable voltage of the opposite polarity than the drain supply voltage.
References Cited (Backward Citations)
US4814839A
Cited
JPS53112069A
Cited
US4799090A
Cited
JPS57106078A
Cited
JPS59154076A
Cited
JPS60245168A
Cited
JPS6127683A
Cited
FR2607630A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-14 | 1995-10-14 | 1996-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-14 | 1999-10-14 | 2000-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-14 | 2003-10-14 | 2004-04-14 | $7700.00 | Window Closed / Lapsed |