US5102809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI BICMOS process
Assignee: Texas Instruments Inc
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Filing: 1990-10-11
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Granted: 1992-04-07
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Expires: 2010-10-11
Abstract
Abstract This invention is an SOI BICMOS process which uses oxygen implanted wafers as the starting substrate. The bipolar transistor is constructed in two stacked epitaxial layers on the surface of the oxygen implanted substrate. A buried collector is formed in the first epitaxial layer that is also used for the CMOS transistors. The buried collector minimizes the collector resistance. Selective epitaxial silicon is then grown over the first epitaxial layer and is used to form the tanks for the bipolar transistors. An oxide layer is formed over the base to serve as an insulator between the emitter poly and the extrinsic base, and also as an etch stop for the emitter etch. The emitter is formed of a polysilicon layer which is deposited through an opening in the oxide layer such that the polysilicon layer contacts the epitaxial layer and overlaps the oxide layer.
Inventors
- 👤 Robert H. Eklund
- 👤 Ravishankar Sundaresan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:59
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
214 words
A method of fabricating a bipolar transistor and a CMOS transistor on an SOI substrate, said method comprising: a. forming a first epitaxial layer on the surface of the oxygen implanted substrate, said epitaxial layer having a bipolar transistor region and a CMOS transistor region; b. forming a buried collector in said bipolar region of said first epitaxial layer; c. forming a patterned insulator layer over said first epitaxial layer, said patterned insulator having an opening in said bipolar transistor region; d. growing a selective epitaxial layer in said opening of said patterned insulator over the first epitaxial layer; e. forming an oxide layer over a top surface of said selective epitaxial layer; f. forming an opening in the oxide layer; g. depositing a polysilicon layer in said opening of said oxide layer; and h. patterning an emitter contact in said polysilicon layer on said opening in the oxide layer and overlapping said oxide layer, whereby the oxide layer over said selective epitaxial layer serves as an etch stop for the patterning of said emitter contact and whereby the process can use standard SOI CMOS and bulk BICMOS processes and has the advantage of eliminating the isolation problems encountered in a bulk BICMOS process, and whereby the buried n+ collector reduces the collector resistance.
Claim 2
Independent Claim
214 words
A method of fabricating a bipolar transistor and a CMOS transistor on an SOI substrate, said method comprising: a. forming a first epitaxial layer on the surface of the oxygen implanted substrate, said epitaxial layer having a bipolar transistor region and a CMOS transistor region; b. forming a buried collector in said bipolar region of said first epitaxial layer; c. forming a patterned insulator layer over said first epitaxial layer, said patterned insulator having an opening in said bipolar transistor region; d. growing a selective epitaxial layer in said opening of said patterned insulator over the first epitaxial layer; e. forming an oxide layer over a top surface of said selective epitaxial layer; f. forming an opening in the oxide layer; g. depositing a polysilicon layer in said opening of said oxide layer; and h. patterning an emitter contact in said polysilicon layer on said opening in the oxide layer and overlapping said oxide layer, whereby the oxide layer over said selective epitaxial layer serves as an etch stop for the patterning of said emitter contact and whereby the process can use standard SOI CMOS and bulk BICMOS processes and has the advantage of eliminating the isolation problems encountered in a bulk BICMOS process, and whereby the buried n+ collector reduces the collector resistance.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said insulating layer is a pad oxide grown over said first epitaxial layer nitride layer on said pad oxide layer.
Claim 4
Dependent Claim
15 words
The method of claim 2, wherein a pad oxide and a nitride layer are utilized.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein a moat pattern is formed and a silicon etch is performed to isolate device regions.
Claim 6
Dependent Claim
21 words
The method of claim 4, wherein said silicon etch to isolate device regions is performed prior to said selective epitaxial growth.
Claim 7
Dependent Claim
50 words
The method of claim 1, wherein a CMOS transistor is formed in said CMOS transistor region, and wherein said forming an oxide layer over said selective epitaxial layer also forms an oxide layer on said CMOS region and wherein said patterning of said polysilicon layer also patterns a poly gate.
Claim 8
Dependent Claim
150 words
The method of claim 1, wherein said emitter poly overlaps said oxide layer, whereby said oxide serves as an insulator between the emitter poly and the extrinsic base, and also as an etch stop for the emitter etch. 5. The method of claim 4, wherein said silicon etch to isolate device regions is performed prior to said selective epitaxial growth 6. The method of claim 1, wherein a CMOS transistor is formed in said CMOS transistor region, and wherein said forming an oxide layer over said selective epitaxial layer also forms an oxide layer on said CMOS region and wherein said patterning of said polysilicon layer also patterns a poly gate. 7. The method of claim 1, wherein said emitter poly overlaps said oxide layer, whereby said oxide serves as an insulator between the emitter poly and the extrinsic base, and also as an etch stop for the emitter etch.
References Cited (Backward Citations)
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