Field effect transistor and method for making same

Claim 2

A field effect transistor comprising a substrate of a first semiconductor material having a first surface, a layer of a semiconductor material of a first conductivity type disposed on said first surface, spaced apart source and drain regions of a second conductivity type different from said first conductivity type extending through said layer into said substrate, a metallic gate electrode disposed on said layer opposite said substrate between said source and drain region and forming a Schottky barrier with said layer, a second conductivity type channel disposed in said substrate, extending between said source and drain regions opposite said gate electrode, said layer having a first conductivity type central region positioned above said channel and adjacent said source and drain regions, said central region forming a potential barrier with said channel and said source and drain regions to reduce leakage current.

Claim 3

The field effect transistor of claim 1 including a region of said first conductivity type disposed in said layer and said substrate and surrounding said channel and said source and drain regions.

Claim 4

The field effect transistor of claim 1 wherein said substrate is semi-insulating.

Claim 5

The field effect transistor of claim 1 wherein said substrate has a first energy band gap, said layer has a second energy band gap, and said second energy band gap is larger than said first energy band gap.

Claim 6

The field effect transistor of claim 4 wherein said substrate is GaAs and said layer is AlGaAs.

Claim 7

The field effect transistor of claim 1 wherein said first conductivity type is p-type.

Claim 8

The field effect transistor of claim 1 including at least one isolation region extending through said layer into said substrate for isolating said transistor electrically from portions of said layer lying beyond said isolation region.

Claim 9

The field effect transistor of claim 1 wherein the density of majority charge carriers in said layer exceeds the density of majority charge carriers in said channel.

Claim 10

A field effect transistor comprising: a semi-insulating substrate; a layer of semiconductor material disposed on the substrate and forming a heterojunction with said substrate; a selective channel implant portion comprising implanted impurities of a second conductivity type in a selected region of said substrate forming a channel region; spaced apart source and drain regions of a second conductivity type extending through said layer and said selected region into said substrate and in contact with said channel region to provide a channel connecting the source and drain regions; a metallic gate electrode disposed on said layer over said channel; said layer being of a first conductivity type in a region above said channel and of second conductivity type in said source and drain regions; said first conductivity type of said layer forming a pn heterojunction with said channel to reduce leakage current flowing from said channel to said gate region, and forming a pn homojunction with said each second conductivity type region to reduce leakage current flowing from each said second conductivity type region to the other; a first conductivity type substrate region provided at a position below said channel and between said source and drain regions to reduce leakage current flowing from said source region to said drain region; and an isolation region for isolating said transistor electrically from portions of said layer lying beyond said isolation region, said isolation region extending through said layer into said substrate and being of second conductivity type semiconductor or insulator material.

Claim 11

A field effect transistor comprising: a semi-insulating substrate; a layer of semiconductor material disposed on the substrate and forming a heterojunction with said substrate; a selective channel implant portion comprising implanted impurities of a second conductivity type in a selected region of said substrate forming a channel region; spaced apart source and drain regions of a second conductivity type extending through said layer and said selected region into said substrate and in contact with said channel region to provide a channel connecting the source and drain regions; a metallic gate electrode disposed on said layer over said channel; said layer being of a first conductivity type in a region above said channel and of second conductivity type in said source and drain regions; said first conductivity type of said layer forming a pn heterojunction with said channel to reduce leakage current flowing from said channel to said gate region, and forming a pn homojunction with said each second conductivity type region to reduce leakage current flowing from each said second conductivity type region to the other; a first conductivity type substrate region provided at a position below said channel and between said source and drain regions to reduce leakage current flowing from said source region to said drain region; and an isolation region for isolating said transistor electrically from portions of said layer lying beyond said isolation region, said isolation region extending through said layer into said substrate and being of second conductivity type semiconductor or insulator material.

Claim 12

The field effect transistor of claim 9 wherein said substrate has a first energy band gap, said layer has a second energy band gap, and said second energy band gap is larger than said first energy band gap.

Claim 13

The field effect transistor of claim 9 wherein the density of majority charge carriers in said layer exceeds the density of majority charge carriers in said channel.

Claim 14

A field effect transistor including a semiconductor substrate having disposed therein source and drain regions of a first conductivity type, a channel of a first conductivity type disposed in said substrate and extending between said source and drain regions, a Schottky barrier metallic gate disposed between said source and drain regions opposite said channel, and means for reducing the leakage current flowing from said channel to said gate, said means for reducing comprising a doped layer associated with an upper surface of the substrate and disposed below said gate.

Claim 15

A field effect transistor including a semiconductor substrate having disposed therein source and drain regions of a first conductivity type, a channel of a first conductivity type disposed in said substrate and extending between said source and drain regions, a Schottky barrier metallic gate disposed between said source and drain regions opposite said channel, and means for reducing the leakage current flowing from said channel to said gate, said means for reducing comprising a doped layer associated with an upper surface of the substrate and disposed below said gate.

Claim 16

The field effect transistor of claim 12 wherein said means for reducing comprises a semiconductor layer of a second conductivity type opposite from said first conductivity type disposed on said substrate having a central region disposed below said metallic gate and above said channel and adjacent said source and drain regions, said central region forming a potential barrier with said channel and said source and drain regions.

Claim 17

The field effect transistor of claim 13 wherein said substrate has a first energy band gap, said layer has a second energy band gap, and said second energy band gap is larger than said first energy band gap.

Claim 18

The field effect transistor of claim 12 including a region of a second conductivity type opposite said first conductivity type disposed in said substrate and surrounding said channel and said source and drain regions.

Claim 19

The field effect transistor of claim 12 wherein said substrate is semi-insulating.

Claim 20

A field effect transistor comprising a substrate of a first semiconductor material, a channel layer associated with the substrate, a metallic gate electrode defining a channel region in the channel layer, a layer of semiconductor material of a first conductivity type disposed between the electrode and the channel layer, the metallic gate electrode forming a Schottky barrier with the semiconductor layer, spaced apart source and drain regions of a second conductivity type different from said first conductivity type extending through the semiconductor layer into the channel layer and defining a central region in the semiconductor layer, the channel region disposed beneath the central region and extending between said source and drain regions in the channel layer, the central region forming a potential barrier with said channel region and said source and drain regions to reduce leakage current.

Claim 21

A field effect transistor comprising a substrate of a first semiconductor material, a channel layer associated with the substrate, a metallic gate electrode defining a channel region in the channel layer, a layer of semiconductor material of a first conductivity type disposed between the electrode and the channel layer, the metallic gate electrode forming a Schottky barrier with the semiconductor layer, spaced apart source and drain regions of a second conductivity type different from said first conductivity type extending through the semiconductor layer into the channel layer and defining a central region in the semiconductor layer, the channel region disposed beneath the central region and extending between said source and drain regions in the channel layer, the central region forming a potential barrier with said channel region and said source and drain regions to reduce leakage current.