US5100834A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of planarizing metal layer
Assignee: Fujitsu Ltd
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Filing: 1991-03-19
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Granted: 1992-03-31
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Expires: 2011-03-19
Abstract
Abstract A planarization method includes the steps of forming a second layer on a first layer which has an alignment mark having a heat sink structure, where the second layer is made of a metal, and irradiating a pulse energy beam on the entire exposed surface of the second layer to planarize the second layer. The heat generated in the second layer on the alignment mark is released via the first layer so that substantially no melting of the second layer occurs on the alignment mark.
Inventors
- 👤 Ryoichi Mukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:49
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/04; H10P34/00; H10P34/40; H10P34/42; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10W46/00; H10W46/301; H10W46/501; Y; Y10; Y10S; Y10S148/00; Y10S148/093; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
83 words
A planarization method comprising the steps of: forming a second layer on a first layer which has an alignment mark having a heat sink structure, said second layer being made of a metal; and irradiating a pulse energy beam on the entire exposed surface of the second layer to planarize the second layer, heat generated in the second layer on the alignment mark being released via the first layer so that substantially no melting of the second layer occurs on the alignment mark.
Claim 2
Dependent Claim
83 words
A planarization method comprising the steps of: forming a second layer on a first layer which has an alignment mark having a heat sink structure, said second layer being made of a metal; and irradiating a pulse energy beam on the entire exposed surface of the second layer to planarize the second layer, heat generated in the second layer on the alignment mark being released via the first layer so that substantially no melting of the second layer occurs on the alignment mark.
Claim 3
Dependent Claim
34 words
The planarization method as claimed in claim 1, wherein said second layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 4
Dependent Claim
17 words
The planarization method as claimed in claim 1, wherein said first layer is made of a semiconductor.
Claim 5
Dependent Claim
21 words
The planarization method as claimed in claim 1, wherein said alignment mark includes grooves which are formed in the first layer.
Claim 6
Dependent Claim
138 words
A planarization method comprising the steps of: patterning one or a plurality of second layers which are formed on a first layer having an alignment mark so as to remove the one or the plurality of second layers on the alignment mark thereby exposing the alignment mark provided on the first layer, said alignment mark having a heat sink structure; forming a third layer on a top one of the second layers and the exposed surface of the first layer, said third layer being made of a metal; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer, heat generated in the third layer on the alignment mark being released via the first layer so that substantially no melting of the third layer occurs on the alignment mark.
Claim 7
Dependent Claim
138 words
A planarization method comprising the steps of: patterning one or a plurality of second layers which are formed on a first layer having an alignment mark so as to remove the one or the plurality of second layers on the alignment mark thereby exposing the alignment mark provided on the first layer, said alignment mark having a heat sink structure; forming a third layer on a top one of the second layers and the exposed surface of the first layer, said third layer being made of a metal; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer, heat generated in the third layer on the alignment mark being released via the first layer so that substantially no melting of the third layer occurs on the alignment mark.
Claim 8
Dependent Claim
34 words
The planarization method as claimed in claim 5, wherein said third layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 9
Dependent Claim
17 words
The planarization method as claimed in claim 5, wherein said first layer is made of a semiconductor.
Claim 10
Dependent Claim
21 words
The planarization method as claimed in claim 5, wherein said alignment mark includes grooves which are formed in the first layer.
Claim 11
Dependent Claim
112 words
A planarization method comprising the steps of: patterning a second layer which is formed on a first layer so as to form an alignment mark having a heat sink structure thereby exposing a surface of the first layer, said second layer being made of an insulator; forming a third layer on the second layer and the exposed surface of the first layer; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer, heat generated in the third layer on the alignment mark being released via the first layer so that substantially no melting of the third layer occurs on the alignment mark.
Claim 12
Dependent Claim
112 words
A planarization method comprising the steps of: patterning a second layer which is formed on a first layer so as to form an alignment mark having a heat sink structure thereby exposing a surface of the first layer, said second layer being made of an insulator; forming a third layer on the second layer and the exposed surface of the first layer; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer, heat generated in the third layer on the alignment mark being released via the first layer so that substantially no melting of the third layer occurs on the alignment mark.
Claim 13
Dependent Claim
34 words
The planarization method as claimed in claim 9, wherein said third layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 14
Dependent Claim
17 words
The planarization method as claimed in claim 9, wherein said first layer is made of a semiconductor.
Claim 15
Dependent Claim
27 words
The planarization method as claimed in claim 9, wherein said alignment mark includes grooves which are formed in the second layer and extends to the first layer.
Claim 16
Dependent Claim
59 words
A planarization method comprising the steps of: forming a second layer on a first layer which has an alignment mark, said second layer being made of a metal; removing the second layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the second layer to planarize the second layer.
Claim 17
Dependent Claim
59 words
A planarization method comprising the steps of: forming a second layer on a first layer which has an alignment mark, said second layer being made of a metal; removing the second layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the second layer to planarize the second layer.
Claim 18
Dependent Claim
34 words
The planarization method as claimed in claim 13, wherein said second layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 19
Dependent Claim
17 words
The planarization method as claimed in claim 13, wherein said first layer is made of a semiconductor.
Claim 20
Dependent Claim
21 words
The planarization method as claimed in claim 13, wherein said alignment mark includes grooves which are formed in the first layer.
Claim 21
Dependent Claim
111 words
A planarization method comprising the steps of: patterning one or a plurality of second layers which are formed on a first layer having an alignment mark so as to remove the one or the plurality of second layers on the alignment mark thereby exposing the alignment mark provided on the first layer; forming a third layer on a top one of the second layers and the exposed surface of the first layer, said third layer being made of a metal; removing the third layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer.
Claim 22
Dependent Claim
111 words
A planarization method comprising the steps of: patterning one or a plurality of second layers which are formed on a first layer having an alignment mark so as to remove the one or the plurality of second layers on the alignment mark thereby exposing the alignment mark provided on the first layer; forming a third layer on a top one of the second layers and the exposed surface of the first layer, said third layer being made of a metal; removing the third layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer.
Claim 23
Dependent Claim
34 words
The planarization method as claimed in claim 17, wherein said third layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 24
Dependent Claim
17 words
The planarization method as claimed in claim 17, wherein said first layer is made of a semiconductor.
Claim 25
Dependent Claim
21 words
The planarization method as claimed in claim 17, wherein said alignment mark includes grooves which are formed in the first layer.
Claim 26
Dependent Claim
89 words
A planarization method comprising the steps of: patterning a second layer which is formed on a first layer so as to form at least an alignment mark thereby exposing a surface of the first layer, said second layer being made of an insulator; forming a third layer on at least the second layer; removing the third layer in a vicinity of the alignment mark provided on the second layer; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer.
Claim 27
Dependent Claim
89 words
A planarization method comprising the steps of: patterning a second layer which is formed on a first layer so as to form at least an alignment mark thereby exposing a surface of the first layer, said second layer being made of an insulator; forming a third layer on at least the second layer; removing the third layer in a vicinity of the alignment mark provided on the second layer; and irradiating a pulse energy beam on the entire exposed surface of the third layer to planarize the third layer.
Claim 28
Dependent Claim
34 words
The planarization method as claimed in claim 21, wherein said third layer is made of a metal selected from a group consisting of aluminum (Al), titanium (Ti), copper (Cu), tungsten (W) and molybdenum (Mo).
Claim 29
Dependent Claim
17 words
The planarization method as claimed in claim 21, wherein said first layer is made of a semiconductor.
Claim 30
Dependent Claim
27 words
The planarization method as claimed in claim 21, wherein said alignment mark includes grooves which are formed in the second layer and extends to the first layer.
Claim 31
Dependent Claim
62 words
The planarization method as claimed in claim 21, wherein said step of patterning the second layer also forms a via hole in the second layer, and said step of removing the third layer leaves the third layer in a vicinity of the via hole so that the third conductor layer which is melted by the energy beam irradiation fills the via hole.
Claim 32
Independent Claim
138 words
A method of producing a semiconductor device comprising the steps of: patterning one or a plurality of insulator layers which are formed on a semiconductor layer having an alignment mark and a semiconductor device so as to remove the one or the plurality of insulator layers on the alignment mark thereby exposing the alignment mark provided on the semiconductor layer, said alignment mark having a heat sink structure; forming a metal layer on a top one of the insulator layers and the exposed surface of the semiconductor layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer, heat generated in the metal layer on the alignment mark being released via the semiconductor layer so that substantially no melting of the metal layer occurs on the alignment mark.
Claim 33
Independent Claim
138 words
A method of producing a semiconductor device comprising the steps of: patterning one or a plurality of insulator layers which are formed on a semiconductor layer having an alignment mark and a semiconductor device so as to remove the one or the plurality of insulator layers on the alignment mark thereby exposing the alignment mark provided on the semiconductor layer, said alignment mark having a heat sink structure; forming a metal layer on a top one of the insulator layers and the exposed surface of the semiconductor layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer, heat generated in the metal layer on the alignment mark being released via the semiconductor layer so that substantially no melting of the metal layer occurs on the alignment mark.
Claim 34
Independent Claim
112 words
A method of producing a semiconductor device comprising the steps of: patterning an insulator layer which is formed on a semiconductor layer having a semiconductor device so as to form an alignment mark having a heat sink structure thereby exposing a surface of the semiconductor layer; forming a metal layer on the insulator layer and the exposed surface of the semiconductor layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer, heat generated in the metal layer on the alignment mark being released via the semiconductor layer so that substantially no melting of the metal layer occurs on the alignment mark.
Claim 35
Independent Claim
112 words
A method of producing a semiconductor device comprising the steps of: patterning an insulator layer which is formed on a semiconductor layer having a semiconductor device so as to form an alignment mark having a heat sink structure thereby exposing a surface of the semiconductor layer; forming a metal layer on the insulator layer and the exposed surface of the semiconductor layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer, heat generated in the metal layer on the alignment mark being released via the semiconductor layer so that substantially no melting of the metal layer occurs on the alignment mark.
Claim 36
Independent Claim
111 words
A method of producing a semiconductor device comprising the steps of: patterning one or a plurality of insulator layers which are formed on a semiconductor layer having an alignment mark and a semiconductor device so as to remove the one or the plurality of semiconductor layers on the alignment mark thereby exposing the alignment mark provided on the semiconductor layer; forming a metal layer on a top one of the insulator layers and the exposed surface of the semiconductor layer; removing the metal layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer.
Claim 37
Independent Claim
111 words
A method of producing a semiconductor device comprising the steps of: patterning one or a plurality of insulator layers which are formed on a semiconductor layer having an alignment mark and a semiconductor device so as to remove the one or the plurality of semiconductor layers on the alignment mark thereby exposing the alignment mark provided on the semiconductor layer; forming a metal layer on a top one of the insulator layers and the exposed surface of the semiconductor layer; removing the metal layer in a vicinity of the alignment mark; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer.
Claim 38
Independent Claim
91 words
A method of producing a semiconductor device comprising the steps of: patterning an insulator layer which is formed on a semiconductor layer having a semiconductor element so as to form at least an alignment mark thereby exposing a surface of the semiconductor layer; forming a metal layer on at least the insulator layer; removing the metal layer in a vicinity of the alignment mark which is provided on the insulator layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer.
Claim 39
Independent Claim
91 words
A method of producing a semiconductor device comprising the steps of: patterning an insulator layer which is formed on a semiconductor layer having a semiconductor element so as to form at least an alignment mark thereby exposing a surface of the semiconductor layer; forming a metal layer on at least the insulator layer; removing the metal layer in a vicinity of the alignment mark which is provided on the insulator layer; and irradiating a pulse energy beam on the entire exposed surface of the metal layer to planarize the metal layer.
Claim 40
Dependent Claim
65 words
The method of producing the semiconductor device as claimed in claim 29, wherein said step of patterning the insulator layer also forms a via hole in the insulator layer, and said step of removing the metal layer leaves the metal layer in a vicinity of the via hole so that the metal layer which is melted by the energy beam irradiation fills the via hole.
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JPS61256635A
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JPS6327013A
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JPS6341020A
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JPS63160330A
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US4920070A
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JPS63215055A
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JPH0227711A
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JPH02137344A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |