Process for preparing epitaxial compound semiconductor

Claim 1

A process for preparing an epitaxial compound semiconductor by molecular beam epitaxy in which molecular and/or atomic beams for forming the matrix of the epitaxial compound semiconductor and for doping the matrix of the semiconductor with an impurity are supplied onto a surface of a semiconductor substrate, the molecular beam epitaxy being effected under the irradiation of the semiconductor substrate surface with an electromagnetic radiation in a region from ultraviolet to infrared thereby growing the epitaxial compound semiconductor of a specific type of conductivity, the wavelength of said electromagnetic radiation being selected to cause a resonance absorption with the hand gap energy of said epitaxial compound semiconductor.