US4693207A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for the growth of semiconductor crystals
Assignee: Sharp Corp
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Filing: 1985-12-06
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Granted: 1987-09-15
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Expires: 2005-12-06
Abstract
Abstract An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kohsei Takahashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:43
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/06
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth, and wherein said optical window is mounted on the molecular beam epitaxial growth chamber by a vacuum port containing a cooling means therein, and comprises a window substance and a heater disposed around said window substance for heating said window substance.
Claim 2
Independent Claim
129 words
An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth, and wherein said optical window is mounted on the molecular beam epitaxial growth chamber by a vacuum port containing a cooling means therein, and comprises a window substance and a heater disposed around said window substance for heating said window substance.
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JPS59126774A
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JPS60128265A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-14 | 1991-03-16 | 1991-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-14 | 1995-03-16 | 1995-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-14 | 1999-03-16 | 1999-09-15 | $7700.00 | Window Closed / Lapsed |