US5100819A
Expired / Lapsed
US
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Method of making electrically programmable and erasable memory cells with field plate conductor defined drain regions
Assignee: Texas Instruments Inc
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Filing: 1990-11-27
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Granted: 1992-03-31
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Expires: 2010-11-27
Abstract
Abstract First and second EEPROM cells have first and second source regions (28a, 28b) formed in a semiconductor layer (12) to be of a second conductivity type opposite the first conductivity type of the layer and to be spaced apart from each other. A field plate conductor (100) is insulatively disposed adjacent, and defines, an inversion region (102), and further is laterally spaced between the first and second source regions (28a, 28b). The inversion region (102) is inverted from the first conductivity type to the second conductivity type upon application of a predetermined voltage to the field plate conductor (100). First and second channel regions (48a, 48b) are defined between the respective source regions (28a+B, 28b) and the inversion region (102) and each include floating gate and control gate subchannel regions (60a, 62a, 62b, 60b). First and second floating gate conductors (40a, 40b) are insulatively disposed adjacent respective floating gate subchannel regions (60a , 60b) to control their conductance. A control gate conductor is insulatively disposed adjacent the control gate subchannel regions (62a, 62b) to control their conductance. In another embodiment, the field plate conductor (100) is replaced with a pair of field plate conductors (42a, 42b) that control the conductance of respective subchannel regions (64a, 64b). The field plate conductors (42a, 42b) act to self-align a diffused drain region (46) that replaces the inversion region (102).
Inventors
- 👤 Manzur Gill
- 👤 Sebastiano D'Arrigo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:47
CPC Classifications
H; H10; H10B; H10B41/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
107 words
A method for fabricating an array of rows and columns of nonvolatile memory cells at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a plurality of pairs of substantially parallel source regions of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form, for each pair of source regions, at least one field plate conductor elongate in the column direction and laterally spaced between said pair of source regions.
Claim 2
Independent Claim
107 words
A method for fabricating an array of rows and columns of nonvolatile memory cells at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a plurality of pairs of substantially parallel source regions of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form, for each pair of source regions, at least one field plate conductor elongate in the column direction and laterally spaced between said pair of source regions.
Claim 3
Dependent Claim
43 words
The method of claim 1 in which the step of etching the first conductor layer includes defining a plurality of floating gate conductor strips to be elongate in a column direction, each floating gate conductor strip disposed insulatively adjacent a respective source region.
Claim 4
Dependent Claim
104 words
The method of claim 2, and further comprising the steps of: forming an interlevel insulator layer over the floating gate conductor strips and the field plate conductors; forming a second conductor layer on the insulator layer; and stack etching the second conductor layer, the interlevel insulator layer and the floating gate conductor strips to define, for each of a plurality of parallel rows formed at an angle to said columns, a word line conductor formed from said second conductor layer and a plurality of floating gate conductors having edges in a row direction which are aligned with respective edges of the word line conductor.
Claim 5
Dependent Claim
44 words
The method of claim 1, in which the step of etching the first conductor layer includes forming, for each pair of source regions, a pair of spaced-apart field plate conductors elongate in the column direction and laterally spaced between said pair of source regions.
Claim 6
Dependent Claim
48 words
The method of claim 4 further comprising the steps of: removing the insulator layer within an area between each pair of spaced-apart field plate conductors; and forming an elongate drain region of the second conductivity type at the face in between each pair of spaced-apart field plate conductors.
Claim 7
Dependent Claim
28 words
The method of claim 5, in which each drain region is self-aligned with longitudinal edges of the pair of spaced-apart field plate conductors it is formed in between.
Claim 8
Dependent Claim
44 words
The method of claim 1, in which the step of forming an insulator layer on the face includes forming a thick insulator region over each source region and, for each row, a thin window insulator region adjacent one side of each thick insulator region.
Claim 9
Dependent Claim
37 words
The method of claim 7, in which said one side of each thick insulator region is separated from a channel region in the semiconductor layer located between a pair of source regions by said thick insulator region.
Claim 10
Dependent Claim
29 words
The method of claim 1, further comprising the step of forming channel stop regions at the face, said channel stop regions being located between adjacent pairs of source regions.
Claim 11
Dependent Claim
17 words
The method of claim 9, in which the channel stop regions are of the first conductivity type.
Claim 12
Dependent Claim
37 words
The method of claim 1, further comprising the step of forming, for each pair of source regions, an elongate drain region of the second conductivity type at the face adjacent said at least one field plate conductor.
Claim 13
Dependent Claim
74 words
The method of claim 1, further comprising the steps of: forming, for each pair of source regions, a diffused contact region between said pair of source regions and between predetermined rows, said at least one field plate conductor overlapping a portion of said diffused contact region; and forming a contact to said diffused contact region, said at least one field plate conductor being routed around said contact to be electrically insulated from said contact.
Claim 14
Independent Claim
95 words
A method for fabricating a pair of nonvolatile memory cells at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a pair of substantially parallel source regions of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form at least one field plate conductor elongate in the column direction and laterally spaced between said pair of source regions.
Claim 15
Independent Claim
95 words
A method for fabricating a pair of nonvolatile memory cells at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a pair of substantially parallel source regions of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form at least one field plate conductor elongate in the column direction and laterally spaced between said pair of source regions.
Claim 16
Dependent Claim
43 words
The method of claim 13 in which the step of etching the first conductor layer includes defining a pair of floating gate conductor strips to be elongate in a column direction, each floating gate conductor strip disposed insulatively adjacent a respective source region.
Claim 17
Dependent Claim
92 words
The method of claim 14, and further comprising the steps of: forming an interlevel insulator layer over the floating gate conductor strips and said at least one field plate conductor; forming a second conductor layer on the insulator layer; and stack etching the second conductor layer, the interlevel insulator layer and the floating gate conductor strips to define a word line conductor formed from said second conductor layer and a pair of floating gate conductors having edges in a row direction which are aligned with respective edges of the word line conductor.
Claim 18
Dependent Claim
38 words
The method of claim 13, in which the step of etching the first conductor layer includes forming a pair of spaced-apart field plate conductors elongate in the column direction and laterally spaced between said pair of source regions.
Claim 19
Dependent Claim
48 words
The method of claim 16 further comprising the steps of: removing the insulator layer within an area between said pair of spaced-apart field plate conductors; and forming an elongate drain region of the second conductivity type at the face in between said pair of spaced-apart field plate conductors.
Claim 20
Dependent Claim
23 words
The method of claim 17, in which said drain region is self-aligned with longitudinal edges of the pair of spaced-apart field plate conductors.
Claim 21
Dependent Claim
41 words
The method of claim 13, in which the step of forming an insulator layer on the face includes forming a thick insulator region over each source region and a thin window insulator region adjacent one side of each thick insulator region.
Claim 22
Dependent Claim
34 words
The method of claim 19, in which said one side of each thick insulator region is separated from a channel region in the semiconductor layer between said source regions by said thick insulator region.
Claim 23
Dependent Claim
31 words
The method of claim 13, further comprising the step of forming an elongate drain region of the second conductivity type at the face adjacent said at least one field plate conductor.
Claim 24
Independent Claim
85 words
A method for fabricating a nonvolatile memory cell at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a source region of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form a field plate conductor elongate in the column direction and laterally spaced from said source region.
Claim 25
Independent Claim
85 words
A method for fabricating a nonvolatile memory cell at a face of a semiconductor layer having a first conductivity type, comprising the steps of: forming a source region of a second conductivity type opposite said first conductivity type in a column direction at the face; forming an insulator layer on the face; forming a first conductor layer over the insulator layer; and etching the first conductor layer to form a field plate conductor elongate in the column direction and laterally spaced from said source region.
Claim 26
Dependent Claim
41 words
The method of claim 22 in which the step of etching the first conductor layer includes defining a floating gate conductor strip to be elongate in a column direction, said floating gate conductor strip disposed insulatively adjacent a respective source region.
Claim 27
Dependent Claim
87 words
The method of claim 23, and further comprising the steps of: forming an interlevel insulator layer over the floating gate conductor strip and said field plate conductor; forming a second conductor layer on the insulator layer; and stack etching the second conductor layer, the interlevel insulator layer and the floating gate conductor strip to define a word line conductor formed from said second conductor layer and a floating gate conductor having edges in a row direction which are aligned with respective edges of the word line conductor.
Claim 28
Dependent Claim
44 words
The method of claim 22 further comprising the steps of: removing the insulator layer within an area adjacent said field plate conductor; and forming an elongate drain region of the second conductivity type at the face in said area adjacent said field plate conductor.
Claim 29
Dependent Claim
19 words
The method of claim 25, in which said drain region is self-aligned an edge of the field plate conductor.
Claim 30
Dependent Claim
41 words
The method of claim 22, in which the step of forming an insulator layer on the face includes forming a thick insulator region over said source region and a thin window insulator region adjacent one side of said thick insulator region.
Claim 31
Dependent Claim
39 words
The method of claim 27, in which said one side of said thick insulator region is separated from a channel region in the semiconductor layer between said source region and said field plate conductor by said thick insulator region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |