US5100499A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Copper dry etch process using organic and amine radicals
Assignee: Texas Instruments Inc
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Filing: 1991-06-25
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Granted: 1992-03-31
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Expires: 2011-06-25
Abstract
Abstract An etch process for etching copper layers that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals to react with copper, preferrable using photoenergizing and photodirecting assistance of high intensity ultraviolet light, to produce a product which is either volatile or easily removed in solution. The process is anisotropic.
Inventors
- 👤 Monte A. Douglas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:19
CPC Classifications
C; C23; C23F; C23F4/00; C23F4/02; H; H05; H05K; H05K3/00; H05K3/02
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
70 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; introducing an organic parent molecule to said copper layer, irradiating said organic parent molecule with high intensity ultraviolet light to produce organic radicals, the organic radicals for reacting with said copper layer to form an organic reaction product.
Claim 2
Dependent Claim
70 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; introducing an organic parent molecule to said copper layer, irradiating said organic parent molecule with high intensity ultraviolet light to produce organic radicals, the organic radicals for reacting with said copper layer to form an organic reaction product.
Claim 3
Dependent Claim
26 words
The process of claim 1 further comprising the step of: heating said substrate to a temperature at which said organic copper reaction product is substantially volatile.
Claim 4
Dependent Claim
20 words
The process of claim 1 further comprising the step of: washing said substrate to remove said organic copper reaction product.
Claim 5
Dependent Claim
13 words
The process of claim 2 wherein said substrate is heated above 200° C.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said organic parent molecule is a alkane.
Claim 7
Dependent Claim
71 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; introducing an amine parent molecule to said copper layer, irradiating said amine parent molecule with high intensity ultraviolet light to produce amine radicals, the amine radicals for reacting with the copper layer to form a copper amine reaction product.
Claim 8
Dependent Claim
71 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; introducing an amine parent molecule to said copper layer, irradiating said amine parent molecule with high intensity ultraviolet light to produce amine radicals, the amine radicals for reacting with the copper layer to form a copper amine reaction product.
Claim 9
Dependent Claim
26 words
The process of claim 6 further comprising the step of: heating said substrate to a temperature at which said copper amine reaction product is substantially volatile.
Claim 10
Dependent Claim
20 words
The process of claim 6 further comprising the step of: washing said substrate to remove said copper amine reaction product.
Claim 11
Dependent Claim
13 words
The process of claim 7 wherein said substrate is heated above 200° C.
Claim 12
Dependent Claim
15 words
The process of claim 6 wherein said amine parent molecule is an ammonia based compound.
Claim 13
Dependent Claim
71 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; producing an organic radical; introducing said organic radical to said copper layer; and exposing the copper layer and organic radical to an energy source, the organic radical reacting with said copper layer to form an organic copper reaction product.
Claim 14
Dependent Claim
71 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; producing an organic radical; introducing said organic radical to said copper layer; and exposing the copper layer and organic radical to an energy source, the organic radical reacting with said copper layer to form an organic copper reaction product.
Claim 15
Dependent Claim
21 words
The process of claim 11 wherein the organic radical is produced by exposing an organic parent molecule to a photochemical environment.
Claim 16
Dependent Claim
22 words
The process of claim 11 wherein the organic radical is produced by exposing an organic parent molecule to a microwave afterglow environment.
Claim 17
Dependent Claim
22 words
The process of claim 11 wherein the organic radical is produced by exposing an organic parent molecule to a plasma discharge environment.
Claim 18
Dependent Claim
22 words
The process of claim 11 wherein the organic radical is produced by exposing the organic parent molecule to a high temperature environment.
Claim 19
Dependent Claim
23 words
The process of claim 11 and further comprising the step of: removing said copper reaction product by photo-induced removal of the reaction product.
Claim 20
Dependent Claim
70 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; producing an amine radical; introducing said amine radical to said copper layer, exposing the copper layer and amine radical to an energy source, the amine radical reacting with said copper layer to form an amine copper reaction product.
Claim 21
Dependent Claim
70 words
A process for etching a copper layer on a substrate to form patterned conductors comprising the steps of: masking areas of said copper layer which areas are not intended to be etched; producing an amine radical; introducing said amine radical to said copper layer, exposing the copper layer and amine radical to an energy source, the amine radical reacting with said copper layer to form an amine copper reaction product.
Claim 22
Dependent Claim
21 words
The process of claim 17 wherein the amine radical is produced by exposing an amine parent molecule to a photochemical environment.
Claim 23
Dependent Claim
22 words
The process of claim 17 wherein the amine radical is produced by exposing an amine parent molecule to a microwave afterglow environment.
Claim 24
Dependent Claim
22 words
The process of claim 17 wherein the amine radical is produced by exposing an amine parent molecule to a plasma discharge environment.
Claim 25
Dependent Claim
22 words
The process of claim 17 wherein the amine radical is produced by exposing the organic parent molecule to a high temperature environment.
Claim 26
Dependent Claim
23 words
The process of claim 17 and further comprising the step of: removing said copper reaction product by photo-induced removal of the reaction product.
Claim 27
Dependent Claim
23 words
The process of claim 1 and further comprising the step of: removing said organic reaction product by photo-induced removal of the reaction product.
Claim 28
Dependent Claim
24 words
The process of claim 6 and further comprising the step of: removing said copper amine reaction product by photo-induced removal of the reaction product.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
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