Magnetically sensitive semiconductor device

Claim 2

A magnetically sensitive semiconductor device for outputting a difference current between at least two collector electrodes in proportion to the strength of an applied magnetic field, comprising: an emitter electrode for supplying a lateral carrier flow, wherein said lateral carrier flow is oriented substantially perpendicular to a direction of a magnetic field that is to be detected with said device; a plurality of collector electrodes comprising a center collector electrode and peripheral collector electrodes, said center collector electrode being between at least two of said peripheral collector electrodes, said peripheral collector electrodes being arranged in line symmetrically to said center collector electrode for serving as collector output electrodes, the direction of a line of said peripheral collector electrodes being substantially perpendicular to a line linking said center collector electrode to said emitter electrode, whereby when said magnetic field is applied perpendicular to said device, a difference current between said peripheral collector electrodes positioned symmetrically to said center electrode increases in proportion t the strength of said magnetic field; a plurality of first base electrodes for accelerating said lateral carrier flow in the direction of said center collector electrode from said emitter electrode, one of said first base electrodes being arranged forwardly of said center collector electrodes relative to the direction of the lateral carrier flow, and another of said first base electrodes being arranged rearwardly of said emitter electrode relative to the direction of the lateral carrier flow; and second base electrodes provided on both sides of a path of the lateral carrier flow from said emitter electrode to said peripheral collector electrodes.

Claim 3

The magnetically sensitive semiconductor device according to claim 1, including means for applying a forward voltage with respect to said emitter electrode to said second base electrodes.

Claim 4

The magnetically sensitive semiconductor device according to claim 1, including means for applying a reverse voltage with respect to said emitter electrode to said second base electrodes.

Claim 5

The magnetically sensitive semiconductor device according to claim 1, wherein said second base electrodes are arranged to have no potential with respect to said emitter electrode.

Claim 6

A magnetically sensitive semiconductor device for outputting a difference current between an even number of collector electrodes in proportion to the strength of an applied magnetic field, comprising: an emitter electrode for supplying a lateral carrier flow, wherein said lateral carrier flow is oriented substantially perpendicular to a direction of a magnetic field that is to be detected with said device; a first collector electrode for extracting carriers of said lateral carrier flow heading substantially directly toward said first collector electrode; an even number of peripheral collector electrodes arranged symmetrically to said first collector electrode for extracting carriers of said lateral carrier flow deflected by a magnetic field, said first collector electrode being between at least two of said peripheral collector electrodes, each two of said peripheral collector electrodes in a symmetrical position from said first collector electrode being arranged substantially equidistantly from said emitter electrode whereby, when said magnetic field is applied perpendicular to said device, a difference current between said peripheral collector electrodes positioned symmetrically to said first collector electrode increases in proportion to the strength of said magnetic field; and a plurality of first base electrodes for accelerating the lateral carrier flow in the direction of said first collector electrode form said emitter electrode, one of said first base electrodes being arranged forwardly of said first collector electrode relative to the direction of the lateral carrier flow and another of said first base electrodes being arranged rearwardly of said emitter electrode relative to the direction of the lateral carrier flow; and second base electrodes provided on both sides of a path of the lateral carrier flow from said emitter electrode to said peripheral collector electrodes.

Claim 7

A magnetically sensitive semiconductor device for outputting a difference current between an even number of collector electrodes in proportion to the strength of an applied magnetic field, comprising: an emitter electrode for supplying a lateral carrier flow, wherein said lateral carrier flow is oriented substantially perpendicular to a direction of a magnetic field that is to be detected with said device; a first collector electrode for extracting carriers of said lateral carrier flow heading substantially directly toward said first collector electrode; an even number of peripheral collector electrodes arranged symmetrically to said first collector electrode for extracting carriers of said lateral carrier flow deflected by a magnetic field, said first collector electrode being between at least two of said peripheral collector electrodes, each two of said peripheral collector electrodes in a symmetrical position from said first collector electrode being arranged substantially equidistantly from said emitter electrode whereby, when said magnetic field is applied perpendicular to said device, a difference current between said peripheral collector electrodes positioned symmetrically to said first collector electrode increases in proportion to the strength of said magnetic field; and a plurality of first base electrodes for accelerating the lateral carrier flow in the direction of said first collector electrode form said emitter electrode, one of said first base electrodes being arranged forwardly of said first collector electrode relative to the direction of the lateral carrier flow and another of said first base electrodes being arranged rearwardly of said emitter electrode relative to the direction of the lateral carrier flow; and second base electrodes provided on both sides of a path of the lateral carrier flow from said emitter electrode to said peripheral collector electrodes.

Claim 8

The magnetically sensitive semiconductor device according to claim 5, including means for applying a forward voltage with respect to said emitter electrode to said second base electrodes.

Claim 9

The magnetically sensitive semiconductor device according to claim 5, including means for applying a reverse voltage with respect to said emitter electrode to said second base electrodes.

Claim 10

The magnetically sensitive semiconductor device according to claim 5, wherein said second base electrodes have no potential with respect to said emitter electrode.

Claim 11

The magnetically sensitive semiconductor device according to claim 5, wherein said first and second base electrodes comprise a grown n-type epitaxial layer on a p-type substrate, and an n + layer diffused thereon.

Claim 12

The magnetically sensitive semiconductor device according to claim 9, wherein said emitter electrode and said first and peripheral collector electrodes comprise a p layer formed by base boron diffusion on the n-type epitaxial layer grown on the p-type substrate.

Claim 13

The magnetically sensitive semiconductor device according to claim 5, wherein said first and second base electrodes comprise a grown n-type epitaxial layer on a p-type substrate, and a p layer diffused thereon.

Claim 14

The magnetically sensitive semiconductor device according to claim 11, wherein said emitter electrode and said first and peripheral collector electrodes comprise a p layer formed on the n-type epitaxial layer grown on the p-type substrate, and an n + layer diffused on said p-layer portion.