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Patent US5095384A successfully refreshed from Google Patents.
US5095384A
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Laser damage resistant vanadium dioxide films
Assignee: United States Department of the Air Force
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Filing: 1990-10-26
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Granted: 1992-03-10
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Expires: 2010-10-26
Abstract
Abstract An optical device structure having enhanced resistance to damage by invasive laser radiation is described which comprises a thin layer of optical switching material, such as VO 2 , deposited onto a lattice matched substrate. A method for fabricating the structure is also described.
Inventors
- 👤 Jeffrey F. DeNatale
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:20
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02F; G02F1/00; G02F1/01; G02F1/0147
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
86 words
An optical device for selectively blocking laser radiation, comprising: (a) a layer of a transition material having a substantially optically transmissive electrically insulating phase below a characteristic transition temperature and a substantially opaque electrically conducting phase above said characteristic transition temperature; and (b) a substrate supporting said layer, said substrate having a characteristic crystal structure and defining a surface upon which said layer is deposited, said surface defined by a crystal plane of said crystal structure presenting a lattice structure which matches that of said layer.
Claim 2
Dependent Claim
86 words
An optical device for selectively blocking laser radiation, comprising: (a) a layer of a transition material having a substantially optically transmissive electrically insulating phase below a characteristic transition temperature and a substantially opaque electrically conducting phase above said characteristic transition temperature; and (b) a substrate supporting said layer, said substrate having a characteristic crystal structure and defining a surface upon which said layer is deposited, said surface defined by a crystal plane of said crystal structure presenting a lattice structure which matches that of said layer.
Claim 3
Dependent Claim
39 words
The structure of claim 1 wherein said layer comprises a material selected from the group consisting of VO 2 , V 2 O 3 , VO, NbO 2 , Fe 3 O 4 and Ti 2 O 3 .
Claim 4
Dependent Claim
18 words
The structure of claim 1 wherein said substrate comprises an oxide which is isostructural with said transition material.
Claim 5
Dependent Claim
44 words
The structure of claim 1 wherein said substrate comprises a material selected from the group consisting of sapphire, TiO 2 , CrO 2 , CdTe, CaF 2 , MgO, CrSbO 4 , AlSbO 4 , AlTaO 4 , GaSbO 4 and CrVO 4 .
Claim 6
Dependent Claim
16 words
The structure of claim 2 wherein said layer has thickness of about 0.1 to 1 micron.
Claim 7
Independent Claim
108 words
A method for fabricating a structure for selectively blocking laser radiation, comprising the steps of: (a) providing a source of transition material having a substantially optically transmissive electrically insulating phase below a characteristic transition temperature and a substantially opaque electrically conductive phase above said characteristic transition temperature; (b) providing a substrate for supporting said layer said substrate having a preselected characteristic crystal structure; (c) providing a surface on said substrate defined by a crystal plane of said crystal structure presenting a lattice structure which matches that of said transition material; and (d) depositing a layer of said transition material to preselected thickness onto said surface of said substrate.
Claim 8
Independent Claim
108 words
A method for fabricating a structure for selectively blocking laser radiation, comprising the steps of: (a) providing a source of transition material having a substantially optically transmissive electrically insulating phase below a characteristic transition temperature and a substantially opaque electrically conductive phase above said characteristic transition temperature; (b) providing a substrate for supporting said layer said substrate having a preselected characteristic crystal structure; (c) providing a surface on said substrate defined by a crystal plane of said crystal structure presenting a lattice structure which matches that of said transition material; and (d) depositing a layer of said transition material to preselected thickness onto said surface of said substrate.
Claim 9
Dependent Claim
39 words
The method of claim 6 wherein said layer comprises a material selected from the group consisting of VO 2 , V 2 O 3 , VO, NbO 2 , Fe 3 O 4 and Ti 2 O 3 .
Claim 10
Dependent Claim
41 words
The method of claim 6 wherein said step of depositing said transition material as said layer is performed using one of reactive electron beam evaporation, reactive ion beam sputtering, magnetron sputtering, ion-assisted electron beam evaporation, chemical vapor deposition and laser ablation.
Claim 11
Dependent Claim
18 words
The method of claim 6 wherein said substrate comprises an oxide which is isostructural with said transition material.
Claim 12
Dependent Claim
44 words
The method of claim 6 wherein said substrate comprises a material selected from the group consisting of sapphire, TiO 2 , CrO 2 , CdTe, CaF 2 , MgO, CrSbO 4 , AlSbO 4 , AlTaO 4 , GaSbO 4 and CrVO 4 .
Claim 13
Dependent Claim
23 words
The method of claim 6 wherein said transition material is deposited as said layer to a thickness of about 0.1 to 1 micron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |