US5094976A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer
Assignee: Toshiba Corp
•
Filing: 1990-10-18
•
Granted: 1992-03-10
•
Expires: 2010-10-18
Abstract
Abstract A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alternate stacking with semiconductor wafers, providing an advantage of labor saving. When the alternate stacking is automated, it will become hard for the wafer breakage to occur, sharply decreasing the rate of breakage. Furthermore, since the adhesion of a semiconductor wafer improves, the variation in the diffusion depth will decrease.
Inventors
- 👤 Masaburo Iwabuchi
- 👤 Hideyoshi Ito
- 👤 Kenji Unetsubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:30
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y02; Y02P; Y02P80/00; Y02P80/30
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
110 words
A method of diffusing an impurity into a semiconductor after comprising the steps of: coating upper and lower surfaces of a dopant film with adhesive layers, said upper and lower surfaces of the dopant film acting as impurity sources; pasting releasable sheets on said upper and lower surfaces of said dopant film through said adhesive layers; automatically releasing said releasable sheets from said dopant film; automatically stacking said dopant film on said semiconductor wafer after the release of said releasable sheets; and diffusing the impurity from said dopant film to said semiconductor wafer by heating said dopant film and said semiconductor wafer which are stacked on top of one another.
Claim 2
Independent Claim
110 words
A method of diffusing an impurity into a semiconductor after comprising the steps of: coating upper and lower surfaces of a dopant film with adhesive layers, said upper and lower surfaces of the dopant film acting as impurity sources; pasting releasable sheets on said upper and lower surfaces of said dopant film through said adhesive layers; automatically releasing said releasable sheets from said dopant film; automatically stacking said dopant film on said semiconductor wafer after the release of said releasable sheets; and diffusing the impurity from said dopant film to said semiconductor wafer by heating said dopant film and said semiconductor wafer which are stacked on top of one another.
Claim 3
Dependent Claim
35 words
A method of diffusing an impurity into a semiconductor wafer, according to claim 1, wherein said impurity is boron, and its weight percentage in said dopant film falls within the range of 9% to 22%.
Claim 4
Dependent Claim
35 words
A method of diffusing an impurity into a semiconductor wafer, according to claim 1, wherein said impurity is phosphorus, and its weight percentage in said dopant film falls within the range of 12% to 20%.
References Cited (Backward Citations)
US3183130A
Cited
US3630793A
Cited
US3971870A
Cited
JPS5484474A
Cited
JPS5658228A
Cited
JPS5790936A
Cited
JPS58176926A
Cited
JPS58215022A
Cited
JPS59196380A
Cited
US4853286A
Cited
US4661177A
Cited
US4756968A
Cited
EP0252739B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |