Patent US4676728A successfully refreshed from Google Patents.
Patent US5094973A successfully refreshed from Google Patents.
US5094973A
Expired / Lapsed
US
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Trench pillar for wafer processing
Assignee: Texas Instruments Inc
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Filing: 1990-06-21
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Granted: 1992-03-10
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Expires: 2010-06-21
Abstract
Abstract A T-shaped trench intersection shaped to make uniform the wall-to-wall spacing at the trench intersection and prevent the formation of voids when the trench is filled with a conformal insulating material.
Inventors
- 👤 Harry F. Pang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:01
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/041; H10W10/10; H10W10/17; H10W10/40
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
51 words
A method for forming an isolation trench structure in a semiconductor material, comprising the steps of: forming a first trench intersecting with a second trench; forming a pillar within said trench intersection to reduce the fillable volume within essentially said trench intersection; and filling said trenches with a conformal insulating material.
Claim 2
Independent Claim
51 words
A method for forming an isolation trench structure in a semiconductor material, comprising the steps of: forming a first trench intersecting with a second trench; forming a pillar within said trench intersection to reduce the fillable volume within essentially said trench intersection; and filling said trenches with a conformal insulating material.
Claim 3
Dependent Claim
14 words
The method claim 1 further including forming said intersection as a T-shaped trench structure.
Claim 4
Dependent Claim
39 words
The method of claim 2, further including forming said intersection with inside corners which are substantially rounded, and forming said T with a cusped trench sidewall which is rounded such that said wall-to-wall spacing of said intersection is uniform.
Claim 5
Dependent Claim
28 words
The method of claim 1, further including forming a trench matrix in a semiconductor wafer, and forming said trench matrix with a plurality of said uniform wall-to-wall intersections.
Claim 6
Dependent Claim
15 words
The method of claim 1, further including forming a circuit in each said semiconductor area.
Claim 7
Dependent Claim
20 words
The method of claim 3 further comprising the step of forming said intersection with inside corners which are substantially rounded.
Claim 8
Dependent Claim
17 words
The method of claim 1, further comprising the step of forming said intersection as a crossing intersection.
Claim 9
Independent Claim
44 words
A method for forming an isolation structure in a semiconductor material, comprising the steps of: forming a first trench intersecting with a second trench; forming a pillar of material centrally within essentially said trench intersection; and filling said trenches with a conformal insulating material.
Claim 10
Independent Claim
44 words
A method for forming an isolation structure in a semiconductor material, comprising the steps of: forming a first trench intersecting with a second trench; forming a pillar of material centrally within essentially said trench intersection; and filling said trenches with a conformal insulating material.
Claim 11
Dependent Claim
22 words
The method of claim 8, wherein the wall-to-wall spacing at said intersections is substantially equal to the pillar width of said trenches.
References Cited (Backward Citations)
JPS60136328A
Cited
US4693781A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |