US5093835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-04-18
•
Granted: 1992-03-03
•
Expires: 2010-04-18
Abstract
Abstract A semiconductor laser device having an active layer sandwiched by semiconductor layers having larger energy band gaps than that of the active layer, includes a semiconductor absorption layer having an energy band gap no larger than that of the active layer and having a thickness periodically changing in the cavity length direction of the resonator close to the active layer so that light which is generated at the active layer reaches the absorption layer, and a semiconductor refractive index matching layer having a larger energy band gap than that of the active layer and a higher refractive index than those of the semiconductor layers sandwiching the active layer to make the equivalent refractive indices in layer thickness direction substantially equal along the resonator direction.
Inventors
- 👤 Akira Takemoto
- 👤 Hitoshi Watanabe
- 👤 Masatoshi Fujiwara
- 👤 Syoichi Kakimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:21
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; H01S5/11; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
188 words
In a semiconductor laser device, a structure comprising: a semiconductor active layer extending along a resonator length direction of the laser and having an energy band gap; first and second semiconductor layers sandwiching said active layer and having larger energy band gaps than said active layer and first and second refractive indices, respectively; a semiconductor absorption layer having an energy band gap no larger than that of said active layer and a thickness measured along a thickness direction generally perpendicular to the resonator length direction, the thickness of said absorption layer being periodic in the resonator length direction, said absorption layer being disposed adjacent said second semiconductor layer for receiving light generated at said active layer; and a semiconductor refractive index matching layer having an energy band gap larger than that of said active layer and a third refractive index higher than the first and second refractive indices, said refractory index matching layer being disposed adjacent said absorption layer and said second semiconductor layer in sufficient thickness to produce a substantially constant equivalent refractive index adjacent said second semiconductor layer in the thickness direction along the resonator length.
Claim 2
Dependent Claim
188 words
In a semiconductor laser device, a structure comprising: a semiconductor active layer extending along a resonator length direction of the laser and having an energy band gap; first and second semiconductor layers sandwiching said active layer and having larger energy band gaps than said active layer and first and second refractive indices, respectively; a semiconductor absorption layer having an energy band gap no larger than that of said active layer and a thickness measured along a thickness direction generally perpendicular to the resonator length direction, the thickness of said absorption layer being periodic in the resonator length direction, said absorption layer being disposed adjacent said second semiconductor layer for receiving light generated at said active layer; and a semiconductor refractive index matching layer having an energy band gap larger than that of said active layer and a third refractive index higher than the first and second refractive indices, said refractory index matching layer being disposed adjacent said absorption layer and said second semiconductor layer in sufficient thickness to produce a substantially constant equivalent refractive index adjacent said second semiconductor layer in the thickness direction along the resonator length.
Claim 3
Dependent Claim
42 words
The semiconductor laser device structure as defined in claim 1, wherein said absorption layer comprises In x Ga 1-x as y P 1-y and said refractive index matching layer comprises In m Ga 1-m As n P 1-n wherein x<m and y>n.
Claim 4
Dependent Claim
32 words
The semiconductor laser device structure as defined in claim 1 wherein the thickness of at least one of said absorption and refractive index matching layers is periodically zero along the resonator length.
Claim 5
Dependent Claim
44 words
The semiconductor laser device structure as defined in claim 1 wherein at least one of said light absorption and refractive index matching layers comprises a plurality of discontinuous regions, said light absorption and refractive index matching layers being alternatingly disposed along the resonator length.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-03 | 2003-09-02 | 2004-03-03 | $7700.00 | Window Closed / Lapsed |