Constant current circuit and integrated circuit having said circuit

Claim 2

A constant current circuit comprising: a junction type field effect transistor comprising a channel forming region; and a bipolar transistor comprising a base region, said channel forming region and said base region being common to each other.

Claim 3

A constant current circuit according to claim 1, wherein said junction type field effect transistor and said bipolar transistor are formed in a common region surrounded by an isolation region.

Claim 4

A constant current circuit according to claim 1, wherein said junction type field effect transistor further comprises a gate region, wherein said bipolar transistor further comprises a collector region, and wherein said gate region and said collector region are common to each other.

Claim 5

A circuit device comprising: a bipolar transistor comprising, a collector region of a first conductivity type, a base region of a second conductivity type opposite to the first conductivity type, and an emitter region of the first conductivity type; and a junction type field effect transistor comprising, a gate region of the first conductivity type electrically connected to said collector region, a source region, and a drain region of the second conductivity type, wherein said source region and said drain region are provided in contact with said base region of said bipolar transistor, and wherein said gate region is disposed between said drain region and said source region.

Claim 6

A circuit device comprising: a bipolar transistor comprising, a collector region of a first conductivity type, a base region of a second conductivity type opposite to the first conductivity type, and an emitter region of the first conductivity type; and a junction type field effect transistor comprising, a gate region of the first conductivity type electrically connected to said collector region, a source region, and a drain region of the second conductivity type, wherein said source region and said drain region are provided in contact with said base region of said bipolar transistor, and wherein said gate region is disposed between said drain region and said source region.

Claim 7

A circuit device according to claim 4, wherein said bipolar transistor comprises a high resistance region of the first conductivity type disposed between said base region and said collector region.

Claim 8

A circuit device according to claim 4, wherein said collector region of said bipolar transistor and said gate region of said junction type field effect transistor are disposed in continuous regions of a same conductivity type.

Claim 9

A circuit device according to claim 4, wherein said first conductivity type is n type.

Claim 10

A circuit device according to claim 4, wherein said first conductivity type is p type.

Claim 11

A circuit device according to claim 4, wherein at least one of said source region and said drain region is a contact region for said base region of said bipolar transistor.