US5091669A
Expired / Lapsed
US
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Surface acoustic wave convolver
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1991-05-23
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Granted: 1992-02-25
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Expires: 2011-05-23
Abstract
Abstract An SAW convolver having a piezoelectric film / insulating layer / low impurity concentration Si epitaxial layer / high impurity concentration Si epitaxial layer structure is disclosed, in which the low impurity concentration Si epitaxial layer is replaced by a GaAs epitaxial layer. In this way, it is possible to improve concentration characteristics with respect to those obtained by the prior art structure described above and it is unnecessary to control the thickness of the epitaxial layer so strictly as for the prior art structure.
Inventors
- 👤 Syuichi Mitsutsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:07
CPC Classifications
G; G06; G06G; G06G7/00; G06G7/12; G06G7/19; G06G7/195
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
43 words
A surface acoustic wave convolver comprising: a high impurity concentration Si substrate; a GaAs epitaxial layer formed on said substrate; a piezoelectric film formed on said GaAs epitaxial layer; and input transducers and an output gate formed in contact with said piezoelectric film.
Claim 2
Dependent Claim
43 words
A surface acoustic wave convolver comprising: a high impurity concentration Si substrate; a GaAs epitaxial layer formed on said substrate; a piezoelectric film formed on said GaAs epitaxial layer; and input transducers and an output gate formed in contact with said piezoelectric film.
Claim 3
Dependent Claim
28 words
A convolver according to claim 1 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration Si substrate and said GaAs epitaxial layer.
Claim 4
Dependent Claim
21 words
A convolver according to claim 1 wherein an insulating film is formed between said GaAs epitaxial layer and said piezoelectric film.
Claim 5
Dependent Claim
24 words
A convolver according to claim 1 wherein both said high impurity concentration Si substrate and said GaAs epitaxial layer are of n conductivity type.
Claim 6
Dependent Claim
28 words
A convolver according to claim 3 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration Si substrate and said GaAs epitaxial layer.
Claim 7
Dependent Claim
24 words
A convolver according to claim 3 wherein both said high impurity concentration Si substrate and said GaAs epitaxial layer are of n conductivity type.
Claim 8
Dependent Claim
47 words
A surface acoustic wave convolver comprising: a high impurity concentration semiconductor substrate; a Ga(1-x)AlxAs epitaxial layer formed on said substrate; a piezoelectric film formed on said epitaxial layer; and right and left input transducers and an output gate put therebetween, formed in contact with said piezoelectric film.
Claim 9
Dependent Claim
47 words
A surface acoustic wave convolver comprising: a high impurity concentration semiconductor substrate; a Ga(1-x)AlxAs epitaxial layer formed on said substrate; a piezoelectric film formed on said epitaxial layer; and right and left input transducers and an output gate put therebetween, formed in contact with said piezoelectric film.
Claim 10
Dependent Claim
21 words
A convolver according to claim 7 wherein an insulating film is formed between said Ga(1-x)AlxAs epitaxial layer and said piezoelectric film.
Claim 11
Dependent Claim
28 words
A convolver according to claim 7 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration semiconductor substrate and said Ga(1-x)AlxAs epitaxial layer.
Claim 12
Dependent Claim
28 words
A convolver according to claim 8 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration semiconductor substrate and said Ga(1-x)AlxAs epitaxial layer.
Claim 13
Dependent Claim
24 words
A convolver according to claim 7 wherein both said high impurity concentration semiconductor substrate and said Ga(1-x)AlxAs epitaxial layer are of n conductivity type.
Claim 14
Dependent Claim
24 words
A convolver according to claim 8 wherein both said high impurity concentration semiconductor substrate and said Ga(1-x)AlxAs epitaxial layer are of n conductivity type.
Claim 15
Dependent Claim
24 words
A convolver according to claim 7 wherein the A component ratio x of said Ga(1-x)AlxAs epitaxial layer is in a region defined by 0<x≦0.4.
Claim 16
Dependent Claim
24 words
A convolver according to claim 8 wherein the A component ratio x of said Ga(1-x)AlxAs epitaxial layer is in a region defined by 0<x≦0.4.
Claim 17
Dependent Claim
42 words
A surface acoustic wave convolver comprising: a high impurity concentration Si substrate; an InP epitaxial layer formed on said substrate; a piezoelectric film formed on said epitaxial layer; and input transducers and an output gate formed in contact with said piezoelectric film.
Claim 18
Dependent Claim
42 words
A surface acoustic wave convolver comprising: a high impurity concentration Si substrate; an InP epitaxial layer formed on said substrate; a piezoelectric film formed on said epitaxial layer; and input transducers and an output gate formed in contact with said piezoelectric film.
Claim 19
Dependent Claim
21 words
A convolver according to claim 15 wherein an insulating film is formed between said InP epitaxial layer and said piezoelectric film.
Claim 20
Dependent Claim
28 words
A convolver according to claim 15 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration Si substrate and said InP epitaxial layer.
Claim 21
Dependent Claim
28 words
A convolver according to claim 16 wherein a distorted superlattice film is disposed at the interface between said high impurity concentration Si substrate and said InP epitaxial layer.
Claim 22
Dependent Claim
24 words
A convolver according to claim 15 wherein both said high impurity concentration Si substrate and said InP epitaxial layer are of n conductivity type.
Claim 23
Dependent Claim
24 words
A convolver according to claim 16 wherein both said high impurity concentration Si substrate and said InP epitaxial layer are of n conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |