US5091664A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated gate bipolar transistor circuit with overcurrent protection
Assignee: Fuji Electric Co Ltd
•
Filing: 1990-02-22
•
Granted: 1992-02-25
•
Expires: 2010-02-22
Abstract
Abstract A semiconductive device integrated on a single chip and adapted for self-protecting use in control applications, including an insulated gate bipolar transistor (IGBT) useful as a series controller for a load. In the event of a load failure (short), the upward current excursion is inhibited by a control arrangement in which a sensing resistor in the emitter circuit of the IGBT turns on a three-terminal signal shunt across the signal control path of the IGBT. The signal shunt includes a voltage dropping element such as a Zener diode and may also include Zener reverse-voltage protection. The sensing resistor may be placed in the low-current branch of a split-emitter current path of the IGBT. A pulsed constant-amplitude driving signal may be applied to the control signal path of the IGBT through serially-connected NPN and PNP bipolar transistors providing a common driving node connected through a serial impedance to the control signal path of the IGBT and to the signal shunt.
Inventors
- 👤 Shoichi Furuhata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:51
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0828
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
88 words
A semiconductor device comprising: an insulated gate main semiconductive element having a gate, a collector and an emitter; an auxiliary semiconductive element having a base connected to the main semiconductive element emitter, a collector and an emitter; a voltage-dropping semiconductive element connected between the main semiconductive element gate and the auxiliary semiconductive element gate and the auxiliary semiconductive element collector; and resistive means, responsive to a predetermined main semiconductive element emitter current, for applying a control voltage across the base and the emitter of the auxiliary semiconductive element.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising: an insulated gate main semiconductive element having a gate, a collector and an emitter; an auxiliary semiconductive element having a base connected to the main semiconductive element emitter, a collector and an emitter; a voltage-dropping semiconductive element connected between the main semiconductive element gate and the auxiliary semiconductive element gate and the auxiliary semiconductive element collector; and resistive means, responsive to a predetermined main semiconductive element emitter current, for applying a control voltage across the base and the emitter of the auxiliary semiconductive element.
Claim 3
Dependent Claim
23 words
The semiconductive device of claim 1, wherein the voltage-dropping semiconductive element is a Zener diode connected to be biased in the Zener polarity.
Claim 4
Dependent Claim
32 words
The semiconductive device of claim 1, wherein the voltage-dropping semiconductive element further comprises, a resistive element connected in series with a Zener diode connected to be biased opposite to the Zener polarity.
Claim 5
Dependent Claim
89 words
A semiconductor device comprising: an insulated gate main semiconductive element having a gate, a collector, an emitter and an emitter current sensing terminal; an auxiliary semiconductive element having a base connected to the emitter current sensing terminal a collector and an emitter; a voltage-dropping semiconductive element connected between the main semiconductive element gate and the auxiliary semiconductive element collector; and resistive means, responsive to a predetermined current through the emitter current sensing terminal, for applying a control voltage across the base and the emitter of the auxiliary semiconductive element.
Claim 6
Dependent Claim
89 words
A semiconductor device comprising: an insulated gate main semiconductive element having a gate, a collector, an emitter and an emitter current sensing terminal; an auxiliary semiconductive element having a base connected to the emitter current sensing terminal a collector and an emitter; a voltage-dropping semiconductive element connected between the main semiconductive element gate and the auxiliary semiconductive element collector; and resistive means, responsive to a predetermined current through the emitter current sensing terminal, for applying a control voltage across the base and the emitter of the auxiliary semiconductive element.
Claim 7
Dependent Claim
52 words
The semiconductive device of claim 4, wherein the emitter current sensing terminal taps an emitter current of the insulated gate main semiconductive element, whereby a predetermined fraction of the emitter current flows through the resistive means to provide a control voltage across the base and the emitter of the auxiliary semiconductive element.
Claim 8
Dependent Claim
42 words
The semiconductive device of claim 4, wherein the voltage-dropping semiconductive element further comprises: a first Zener diode connected to be biased in the Zener polarity and in series with; a second Zener diode connected to be biased opposite to the Zener polarity.
References Cited (Backward Citations)
US4581540A
Cited
EP0190925A2
Cited
US4721869A
Cited
JPS63105521A
Cited
JPS63129863A
Cited
US4841166A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |