US5090932A
Expired / Lapsed
US
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Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
Assignee: Thales SA
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Filing: 1989-03-24
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Granted: 1992-02-25
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Expires: 2009-03-24
Abstract
Abstract Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45° to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.
Inventors
- 👤 Dominique Dieumegard
- 👤 Guy Garry
- 👤 Leonidas Karapiperis
- 👤 Didier Pribat
- 👤 Christian Collet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:34
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J9/00; H01J9/02; H01J9/022; H01J9/025
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
40 words
A method for the fabrication of field emission type electron sources, comprising: forming peaks by epitaxial and faceted growth of conductive or semi-conductive material on demarcated nucleation zones of a surface of a monocrystalline and, at least partially conductive, substrate.
Claim 2
Independent Claim
40 words
A method for the fabrication of field emission type electron sources, comprising: forming peaks by epitaxial and faceted growth of conductive or semi-conductive material on demarcated nucleation zones of a surface of a monocrystalline and, at least partially conductive, substrate.
Claim 3
Dependent Claim
133 words
A fabrication method according to claim 1, comprising the following steps: forming a first insulating layer on the surface of the monocrystalline substrate; selectively removing the first insulating layer to form elementary zones having a predetermined orientation with respect to crystallographic directions of the plane of the substrate; growing silicon in a faceted, epitaxial manner in the elementary zones of the thus bared substrate, to form the peaks; depositing a first metallic thin layer and then a second insulating layer, and a second metallic thin layer on the second insulation layer; and removing the second metallic layer and the second insulating layer on the peaks to bare the peaks coated with the first metallic layer forming cathodes, the second metallic layer being capable of being etched to form a network of associated gates.
Claim 4
Dependent Claim
112 words
A fabrication method according to claim 1, comprising the following stages: forming a first insulating layer on a surface of a highly N + doped monocrystalline layer; selectively removing the first insulating layer to form square elementary zones with sides having a predetermined orientation with respect to crystallographic axes of the plane of the substrate; growing metallic or semi-conductive material in a faceted and epitaxial manner in the elementary zones of the thus bared substrate, to form the peaks; depositing a metallic thin layer on the surface of the metallic or semiconductive material; depositing a second insulating layer on said metallic thin layer; and removing the second insulating layer on the peaks.
Claim 5
Dependent Claim
26 words
A fabrication method according to one of claims 1-3 comprising performing the epitaxial growth using a parent gas phase doped and diluted in a carrier gas.
Claim 6
Dependent Claim
24 words
A method according to claim 4, wherein the parent gas phase comprises SiH 4 and wherein the carrier gas is H 2 or He.
Claim 7
Dependent Claim
14 words
A method according to claim 4, wherein HCl is added in the gas phase.
Claim 8
Dependent Claim
14 words
A method according to claim 4, wherein the dopant gas is PH 3 .
Claim 9
Dependent Claim
32 words
A fabrication method according to claim 2, comprising forming the first insulating layer by thermally oxidizing the monocrystalline substrate, the first metallic layer being tungsten and the second insulating layer being nitride.
Claim 10
Dependent Claim
18 words
A method according to claim 2, comprising depositing at least one of the first and second insulating layers.
Claim 11
Dependent Claim
23 words
A method according to claim 9, wherein the deposition is achieved by one of the following methods: evaporation, cathode sputtering or CVD process.
Claim 12
Dependent Claim
29 words
A fabrication method according to claim 2, comprising removing the layers in the elementary zones by the deposition of a masking resin, masking and selectively removing the non-masked zone.
Claim 13
Dependent Claim
38 words
A method according to claim 2, wherein said step of depositing said first metallic thin layer interconnects the emitting peaks of said cathodes; and further comprising etching a system of said gates in the second metallic thin layer.
Claim 14
Independent Claim
73 words
A method for making electron sources of field emission devices comprising: depositing at least one layer of dielectric material on a monocrystalline substrate; etching at least one cavity in the deposited dielectric layer; forming a cathode peak having facets, by crystalline growth nucleated on the substrate, at the bottom of each cavity; and forming a layer of electrically conductive material, acting as a gate, on the at least one layer of dielectric material.
Claim 15
Independent Claim
73 words
A method for making electron sources of field emission devices comprising: depositing at least one layer of dielectric material on a monocrystalline substrate; etching at least one cavity in the deposited dielectric layer; forming a cathode peak having facets, by crystalline growth nucleated on the substrate, at the bottom of each cavity; and forming a layer of electrically conductive material, acting as a gate, on the at least one layer of dielectric material.
Claim 16
Dependent Claim
24 words
A method according to claim 13, comprising forming a polycrystalline layer of electrically conductive material during the step of forming the monocrystalline cathode peak.
Claim 17
Dependent Claim
35 words
A method according to claim 14, comprising: using an Si substrate; and forming the layer of electrically conductive material and the cathode peak using a parent gas phase doped and diluted in a carrier gas.
Claim 18
Dependent Claim
24 words
A method according to claim 15, wherein the parent gas phase comprises SiH 4 and wherein the carrier gas is H 2 or He.
Claim 19
Dependent Claim
13 words
A method according to claim 15, comprising adding HCl in the gas phase.
Claim 20
Dependent Claim
14 words
A method according to claim 15, comprising using PH 3 as a dopant gas.
Claim 21
Dependent Claim
26 words
A method according to claim 13, comprising forming the at least one layer of electrically conductive material on the dielectric layer before etching of the cavity.
Claim 22
Dependent Claim
21 words
A method according to claim 19, comprising depositing, on the layer of electrically conductive material, a second layer of dielectric material.
Claim 23
Dependent Claim
40 words
A method according to claim 20, comprising the material forming the second dielectric layer being different from the material forming the first dielectric layer, and increasing the size of the cavity in the first dielectric layer by selective chemical attack.
Claim 24
Dependent Claim
24 words
A method according to claim 21, comprising said first dielectric layer being SiO 2 , and the selective chemical attack being achieved by HF.
Claim 25
Dependent Claim
17 words
A method according to claim 19, comprising forming the cathode peak under conditions of faceted, selective epitaxy.
Claim 26
Dependent Claim
50 words
A method according to claim 23, comprising said substrate being made of Si, and achieving the selective epitaxy in a CVD reactor at a temperature ranging from 900° to 1100° C. and using a gas mixture consisting of SiH 4 +HC1 or SiH 2 Cl 2 +HC1 in carrier hydrogen.
Claim 27
Dependent Claim
41 words
A method according to claim 23, comprising the substrate being GaAs, and performing the selective epitaxy between 600° and 800° C. in a VPE reacting using a gas mixture comprising AsCl 3 diluted in H 2 and a solid gallium source.
Claim 28
Dependent Claim
22 words
A method according to claim 23, comprising the substrate being GaAs, and performing the selective epitaxy in a reduced pressure MOCVD reactor.
Claim 29
Dependent Claim
18 words
A method according to claim 20, comprising moving the second layer of dielectrical material by selective chemical attack.
Claim 30
Dependent Claim
42 words
A method according to claim 13 comprising, when the facets of the cathode peak are not formed in predetermined crystallographic planes, subjecting the peak to a subsequent selective chemical attack to obtain facets of the cathode peak in the predetermined crystallographic planes.
Claim 31
Dependent Claim
32 words
A method according to claim 28, comprising the substrate being made of Si, and using, for the subsequent selective chemical attack, a solution based on hydroxide ions, such as KOH or NaOH.
Claim 32
Dependent Claim
17 words
A method according to claim 28, comprising using, for the subsequent selective chemical attack, an ethylenediamine-based solution.
Claim 33
Dependent Claim
73 words
An electron source of the field emission type comprising, in the order given, a monocrystalline substrate with at least one projecting cathode peak formed by faceted epitaxial growth nucleated on the substrate, a dielectric layer and a layer of electrically conductive material, the cathode peak being housed in a cavity, with a section of any shape, made in these two layers and being centered with respect to the aperture in the conducting layer.
Claim 34
Dependent Claim
73 words
An electron source of the field emission type comprising, in the order given, a monocrystalline substrate with at least one projecting cathode peak formed by faceted epitaxial growth nucleated on the substrate, a dielectric layer and a layer of electrically conductive material, the cathode peak being housed in a cavity, with a section of any shape, made in these two layers and being centered with respect to the aperture in the conducting layer.
Claim 35
Dependent Claim
10 words
A component using an electron source according to claim 31.
Claim 36
Dependent Claim
36 words
A component according to claim 32, wherein the component is an electroluminescent component having an anode layer made of an electroluminescent material enclosing the cavity at the bottom of which the cathode peak has been formed.
Claim 37
Dependent Claim
25 words
A component according to claim 32, having a matrix structure of rows and columns, each intersection of the matrix including at least one electron source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |