US5090609A
Expired / Lapsed
US
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Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals
Assignee: Hitachi Ltd
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Filing: 1990-04-26
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Granted: 1992-02-25
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Expires: 2010-04-26
Abstract
Abstract An invention relating to a technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, and more particularly pertaining to a method of irradiating bonding surfaces, for which a solder is used, and solder bump electrodes of a package with an atomic or ion energy beam and bonding the bonding surfaces to each other under normal pressure (about 1 atm) in a continuous apparatus.
Inventors
- 👤 Takashi Nakao
- 👤 Yoshiaki Emoto
- 👤 Koichiro Sekiguchi
- 👤 Masayuki Iketani
- 👤 Kunizo Sahara
- 👤 Ikuo Yoshida
- 👤 Akiomi Kohno
- 👤 Masaya Horino
- 👤 Hideaki Kamohara
- 👤 Shouichi Irie
- 👤 Hiroshi Akasaki
- 👤 Kanji Otsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:37
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3465; H05K3/3478; H10; H10W; H10W70/00; H10W70/099; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/153; H10W90/00; H10W90/701; H05K2203/00; H05K2203/01; H05K2203/0104; H05K2203/0113; H05K2203/0147; H05K2203/016; H05K2203/03; H05K2203/0338; H05K2203/04; H05K2203/041; H05K3/3489; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/655; H10W72/00; H10W72/01; H10W72/012; H10W72/01204; H10W72/01221; H10W72/01225; H10W72/01271; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W72/255; H10W72/851; H10W72/874; H10W72/877; H10W76/17
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
86 words
A method of bonding a set of metal members which comprises the steps of: (a) irradiating respective bonding surfaces of a pair of metal members disposed in a vacuum vessel with an atomic beam; (b) transferring said metal members into another vessel continuous with said vacuum vessel, said another vessel provided therein with a high-purity inert gas atmosphere; and (c) pressing said bonding surfaces of said metal members against each other under norma pressure in said another vessel provided therein with the high-purity inert gas atmosphere.
Claim 2
Independent Claim
86 words
A method of bonding a set of metal members which comprises the steps of: (a) irradiating respective bonding surfaces of a pair of metal members disposed in a vacuum vessel with an atomic beam; (b) transferring said metal members into another vessel continuous with said vacuum vessel, said another vessel provided therein with a high-purity inert gas atmosphere; and (c) pressing said bonding surfaces of said metal members against each other under norma pressure in said another vessel provided therein with the high-purity inert gas atmosphere.
Claim 3
Dependent Claim
34 words
A method of bonding a set of metal members according to claim 1 comprising: heating said metal members to a temperature not higher than the melting temperatures of said metal members in step (c).
Claim 4
Dependent Claim
26 words
A method of bonding a set of metal members according to claim 1, wherein at least one of said metal members comprises a non eutectic alloy.
Claim 5
Dependent Claim
45 words
A method of bonding a set of metal members according to claim 3, further comprising before step (a): (d) meting said non-eutectic alloy and rapidly cooling said melted non-eutectic alloy to cause segregation of a eutectic alloy layer to the surface of said non-eutectic alloy.
Claim 6
Dependent Claim
20 words
A method of bonding a set of metal members according to claim 3, wherein said non-eutectic alloy is a solder.
Claim 7
Independent Claim
147 words
A method of bonding a set of metal members which comprises the steps of: (a) irradiating respective bonding surfaces of a pair of metal members disposed in a vacuum vessel with an atomic beam, said pair of metal members having a first metal member and a second metal member; (b) transferring said metal members into a bonding vessel continuous with said vacuum vessel, said bonding vessel having a first bonding zone and a second bonding zone, said bonding vessel provided therein with a high-purity inert gas atmosphere; (c) inverting, or turning 180°, said first metal member in said first bonding zone in said bonding vessel and pressing said first metal member against said second metal member under normal pressure, and (d) transferring said metal members into said second bonding zone in said bonding vessel and heating said metal members, thereby fusion-bonding said metal members to each other.
Claim 8
Independent Claim
147 words
A method of bonding a set of metal members which comprises the steps of: (a) irradiating respective bonding surfaces of a pair of metal members disposed in a vacuum vessel with an atomic beam, said pair of metal members having a first metal member and a second metal member; (b) transferring said metal members into a bonding vessel continuous with said vacuum vessel, said bonding vessel having a first bonding zone and a second bonding zone, said bonding vessel provided therein with a high-purity inert gas atmosphere; (c) inverting, or turning 180°, said first metal member in said first bonding zone in said bonding vessel and pressing said first metal member against said second metal member under normal pressure, and (d) transferring said metal members into said second bonding zone in said bonding vessel and heating said metal members, thereby fusion-bonding said metal members to each other.
Claim 9
Dependent Claim
34 words
A method of bonding a set of metal members according to claim 6 comprising: heating said metal members to a temperature not higher than the meting temperatures of said metal members in step (d).
Claim 10
Dependent Claim
22 words
A method of bonding a set of metal members according to claim 6, wherein said first metal member comprises a non-eutectic alloy.
Claim 11
Dependent Claim
20 words
A method of bonding a set of metal members according to claim 8, wherein said non-eutectic alloy is a solder.
Claim 12
Dependent Claim
45 words
A method of bonding a set of metal members according to claim 8, further comprising before step (a): (d) melting said non-eutectic alloy and rapidly cooling said melted non-eutectic alloy to cause segregation of a eutectic alloy layer to the surface of said non-eutectic alloy.
Claim 13
Independent Claim
338 words
A method of fabricating a semiconductor device which comprises the steps of: (a) preparing a semiconductor chip provided with integrated circuits and projected electrodes on a principal surface thereof, and a substrate for mounting said semiconductor chip thereon; (b) disposing said semiconductor chip and said substrate in a vacuum vessel, and irradiating said projected electrodes and a mount surface of said substrate with an atomic beam; (c) transferring said semiconductor chip and said substrate into a bonding vessel continuous with said vacuum vessel, said bonding vessel provided therein with a high-purity inert gas atmosphere, and said bonding vessel having a first bonding zone and a second bonding zone; (d) inverting, or turning 180°, said semiconductor chip in said first bonding zone to oppose said projected electrodes to said mount surface, and pressing said projected electrodes against said mount surface under normal pressure; (e) transferring said substrate with said semiconductor chip mounted thereon into said second bonding zone and heating said substrate and semiconductor chip, thereby fusion-bonding said substrate and said semiconductor chip to each other; (f) preparing a roughly U-shaped encapsulating material comprising a recessed lower surface portion and a projected base portion, said lower surface portion and said projected base portion provided with a bonding layer; (g) disposing said substrate with said semiconductor chip mounted thereon and said encapsulating material in a vacuum vessel, and irradiating a back surface of said semiconductor chip, said substrate, said lower surface portion and said projected base portion with an atomic beam; (h) transferring said substrate with said semiconductor chip mounted thereon and said encapsulating material into said first bonding zone, then inverting, or turning 180°, said encapsulating material, and pressing said substrate and said base portion against each other and said back surface of said chip and said lower surface portion against each other under normal pressure; and (i) transferring said substrate encapsulated by said encapsulating material into said second bonding zone, and heating said substrate and encapsulating material, thereby fusion-bonding said substrate and said encapsulating material to each other.
Claim 14
Independent Claim
338 words
A method of fabricating a semiconductor device which comprises the steps of: (a) preparing a semiconductor chip provided with integrated circuits and projected electrodes on a principal surface thereof, and a substrate for mounting said semiconductor chip thereon; (b) disposing said semiconductor chip and said substrate in a vacuum vessel, and irradiating said projected electrodes and a mount surface of said substrate with an atomic beam; (c) transferring said semiconductor chip and said substrate into a bonding vessel continuous with said vacuum vessel, said bonding vessel provided therein with a high-purity inert gas atmosphere, and said bonding vessel having a first bonding zone and a second bonding zone; (d) inverting, or turning 180°, said semiconductor chip in said first bonding zone to oppose said projected electrodes to said mount surface, and pressing said projected electrodes against said mount surface under normal pressure; (e) transferring said substrate with said semiconductor chip mounted thereon into said second bonding zone and heating said substrate and semiconductor chip, thereby fusion-bonding said substrate and said semiconductor chip to each other; (f) preparing a roughly U-shaped encapsulating material comprising a recessed lower surface portion and a projected base portion, said lower surface portion and said projected base portion provided with a bonding layer; (g) disposing said substrate with said semiconductor chip mounted thereon and said encapsulating material in a vacuum vessel, and irradiating a back surface of said semiconductor chip, said substrate, said lower surface portion and said projected base portion with an atomic beam; (h) transferring said substrate with said semiconductor chip mounted thereon and said encapsulating material into said first bonding zone, then inverting, or turning 180°, said encapsulating material, and pressing said substrate and said base portion against each other and said back surface of said chip and said lower surface portion against each other under normal pressure; and (i) transferring said substrate encapsulated by said encapsulating material into said second bonding zone, and heating said substrate and encapsulating material, thereby fusion-bonding said substrate and said encapsulating material to each other.
Claim 15
Dependent Claim
23 words
A method of fabricating a semiconductor device according to claim 11, wherein said projected electrodes and said bonding layer comprise a non-eutectic alloy.
Claim 16
Dependent Claim
18 words
A method of fabricating a semiconductor device according to claim 12, wherein said non-eutectic alloy is a solder.
Claim 17
Dependent Claim
45 words
A method of fabricating a semiconductor device according to claim 12, further comprising before step (a): (j) melting said non eutectic alloy and rapidly cooling said melted non-eutectic alloy to cause segregation of a eutectic alloy layer to the surface of said non eutectic alloy.
Claim 18
Dependent Claim
45 words
A method of fabricating a semiconductor device according to claim 12, further comprising between steps (e) and (f): (j) melting said non-eutectic alloy and rapidly cooling said melted non-eutectic alloy to cause segregation of a eutectic alloy layer to the surface of said non-eutectic alloy.
Claim 19
Independent Claim
102 words
A method of fabricating a semiconductor device which comprises the steps of: (a) preparing a semiconductor chip provided with integrated circuits and projected electrodes on a principal surface thereof and metal leads; (b) disposing said semiconductor chip and said leads in a vacuum vessel, and irradiating said projected electrodes and leads with an atomic beam; (c) transferring said semiconductor chip and said leads into a bonding vessel continuous with said vacuum vessel, said bonding vessel provided therein with a high-purity inert gas atmosphere; and (d) pressing said projected electrodes and said leads against each other under normal pressure in said bonding vessel.
Claim 20
Independent Claim
102 words
A method of fabricating a semiconductor device which comprises the steps of: (a) preparing a semiconductor chip provided with integrated circuits and projected electrodes on a principal surface thereof and metal leads; (b) disposing said semiconductor chip and said leads in a vacuum vessel, and irradiating said projected electrodes and leads with an atomic beam; (c) transferring said semiconductor chip and said leads into a bonding vessel continuous with said vacuum vessel, said bonding vessel provided therein with a high-purity inert gas atmosphere; and (d) pressing said projected electrodes and said leads against each other under normal pressure in said bonding vessel.
Claim 21
Dependent Claim
23 words
A method of fabricating a semiconductor device according to claim 16, wherein said projected electrodes and said bonding layer comprises a non-eutectic alloy.
Claim 22
Dependent Claim
18 words
A method of fabricating a semiconductor device according to claim 17, wherein said non-eutectic alloy is a solder.
Claim 23
Dependent Claim
45 words
A method of fabricating a semiconductor device according to claim 17, further comprising before step (a): (e) melting said non eutecting alloy and rapidly cooling said melted non eutectic alloy to cause segregation of a eutectic alloy layer to the surface of said non-eutectic alloy.
Claim 24
Independent Claim
67 words
An apparatus for producing a semiconductor device comprising: an activation chamber having a source gun for radiating an atomic beam and an evacuation mechanism; and a bonding chamber having a press-bonding mechanism, a fusion bonding mechanism, and means for supplying a high-purity inert gas to develop normal pressure inside said bonding chamber, wherein said activation chamber and said bonding chamber ar provided in connection with each other.
Claim 25
Independent Claim
67 words
An apparatus for producing a semiconductor device comprising: an activation chamber having a source gun for radiating an atomic beam and an evacuation mechanism; and a bonding chamber having a press-bonding mechanism, a fusion bonding mechanism, and means for supplying a high-purity inert gas to develop normal pressure inside said bonding chamber, wherein said activation chamber and said bonding chamber ar provided in connection with each other.
Claim 26
Dependent Claim
26 words
An apparatus for producing a semiconductor device according to claim 20, further comprising: a first load-lock chamber for connecting said activation chamber with said bonding chamber.
Claim 27
Dependent Claim
35 words
An apparatus for producing a semiconductor device according to claim 20, further comprising, in said press-bonding mechanism; means for inverting, or turning 180°, one part; and means for press-bonding said one part to another part.
Claim 28
Dependent Claim
30 words
An apparatus for producing a semiconductor device according to claim 20, further comprising, in said fusion bonding mechanism: a stage for mounting said semiconductor device thereon; and means for heating.
Claim 29
Dependent Claim
26 words
An apparatus for producing a semiconductor device according to claim 20, further comprising: a part-containing chamber connected to said bonding chamber through a second load-lock chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-24 | 1995-08-26 | 1996-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-24 | 1999-08-26 | 2000-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-24 | 2003-08-26 | 2004-02-25 | $7700.00 | Window Closed / Lapsed |