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US5089802A
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Diamond thermistor and manufacturing method for the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-23
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Granted: 1992-02-18
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Expires: 2010-08-23
Abstract
Abstract A diamond thermistor is described. Surface portions of temperature sensing diamond of the thermistor are doped with impurity ions by ion implantation except for a sensing area thereof. A pair of electrodes are formed on the impurity regions in order to make good ohmic contacts with the diamond. The damage caused by the ion implantation is remedied by subjecting the diamond film to laser annealing.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:13
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C7/00; H01C7/04; H01C7/041; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49085
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
49 words
A diamond thermistor comprising: a diamond substrate having an approximately intrinsic conductivity type; a pair of impurity regions formed within the surface of said diamond substrate with a temperature sensing region therebetween; and a pair of electrodes making electric contact with the impurity regions of said diamond substrate, respectively.
Claim 2
Dependent Claim
49 words
A diamond thermistor comprising: a diamond substrate having an approximately intrinsic conductivity type; a pair of impurity regions formed within the surface of said diamond substrate with a temperature sensing region therebetween; and a pair of electrodes making electric contact with the impurity regions of said diamond substrate, respectively.
Claim 3
Dependent Claim
24 words
The diamond thermistor of claim 1 wherein said impurity is selected from Group IIa, IIb, IIIa, IVa, Va or VIa of the periodic table.
Claim 4
Dependent Claim
26 words
The diamond thermistor of claim 1 wherein said impurity regions include an impurity at a concentration of 5×10 17 to 5×10 20 atoms cm -3 .
Claim 5
Dependent Claim
19 words
The diamond thermistor of claim 1 wherein said diamond substrate is a diamond film formed on a silicon substrate.
Claim 6
Dependent Claim
21 words
The diamond thermistor of claim 4 wherein a silicon nitride film is interposed between said silicon substrate and said diamond film.
Claim 7
Dependent Claim
14 words
The diamond thermistor of claim 1 wherein said diamond substrate is a bulk diamond.
Claim 8
Dependent Claim
37 words
A diamond thermistor comprising: a diamond substrate having a projection of diamond; and a pair of electrodes formed on said diamond substrate with said projection interposed therebetween so that said projection functions as a temperature sensing region.
Claim 9
Dependent Claim
37 words
A diamond thermistor comprising: a diamond substrate having a projection of diamond; and a pair of electrodes formed on said diamond substrate with said projection interposed therebetween so that said projection functions as a temperature sensing region.
Claim 10
Independent Claim
62 words
A method of forming a diamond thermistor comprising the steps of forming a pair of impurity regions within a surface of diamond substrate with a temperature sensing region therebetween by ion implantation; subjecting said diamond substrate to laser annealing in order to cure damage caused by said ion implantation; and forming a pair of electrodes making electric contact with said impurity regions.
Claim 11
Independent Claim
62 words
A method of forming a diamond thermistor comprising the steps of forming a pair of impurity regions within a surface of diamond substrate with a temperature sensing region therebetween by ion implantation; subjecting said diamond substrate to laser annealing in order to cure damage caused by said ion implantation; and forming a pair of electrodes making electric contact with said impurity regions.
Claim 12
Dependent Claim
22 words
The method of claim 8 wherein the wavelength of laser light used for said laser annealing is no longer than 260 nm.
Claim 13
Dependent Claim
18 words
The method of claim 9 wherein said laser annealing is carried out by means of an excimer laser.
Claim 14
Dependent Claim
28 words
The method of claim 8 wherein the impurity introduced by said ion implantation is selected from Group IIa, IIb, IIIa, IVa, Va or VIa of the periodic table.
Claim 15
Independent Claim
62 words
A method of forming a diamond thermistor comprising: depositing a diamond film on a substrate; coating a mask on a surface of said diamond film; introducing impurity ions into said diamond film through said mask in order to form a pair of low resistance impurity regions; removing said mask; and forming a pair of electrodes making electric contact with said impurity regions.
Claim 16
Independent Claim
62 words
A method of forming a diamond thermistor comprising: depositing a diamond film on a substrate; coating a mask on a surface of said diamond film; introducing impurity ions into said diamond film through said mask in order to form a pair of low resistance impurity regions; removing said mask; and forming a pair of electrodes making electric contact with said impurity regions.
Claim 17
Dependent Claim
28 words
A method as in claim 12 wherein said impurity ions are added into said diamond film at a concentration of 5×10 17 to 5×10 20 atoms·cm -3 .
Claim 18
Independent Claim
56 words
A method of forming a diamond thermistor comprising: depositing a diamond film on a substrate; and forming a pair of electrodes on said diamond film so that a temperature sensing region is defined between said electrodes, wherein said temperature sensing region includes an impurity at a concentration of 10 15 to 10 17 atoms·cm -3 .
Claim 19
Independent Claim
56 words
A method of forming a diamond thermistor comprising: depositing a diamond film on a substrate; and forming a pair of electrodes on said diamond film so that a temperature sensing region is defined between said electrodes, wherein said temperature sensing region includes an impurity at a concentration of 10 15 to 10 17 atoms·cm -3 .
Claim 20
Dependent Claim
25 words
A method as in claim 13 wherein said impurity ions is selected from the group consisting of Zn, P, N. As, S, O and Se.
Claim 21
Dependent Claim
46 words
A diamond thermistor comprising: a diamond substrate; and a pair of electrodes formed on said diamond substrate with a temperature sensing region defined therebetween, wherein said diamond substrate is doped with an impurity at a concentration of 10 15 to 10 17 atoms cm -3 .
Claim 22
Dependent Claim
46 words
A diamond thermistor comprising: a diamond substrate; and a pair of electrodes formed on said diamond substrate with a temperature sensing region defined therebetween, wherein said diamond substrate is doped with an impurity at a concentration of 10 15 to 10 17 atoms cm -3 .
Claim 23
Dependent Claim
23 words
The thermistor of claim 16 wherein said impurity is selected from the group consisting of Zn, P, N, As, S, O and Se.
References Cited (Backward Citations)
US3832668A
Cited
US4806900A
Cited
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