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US5088099A
Expired / Lapsed
US
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Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
Assignee: Agere Systems LLC
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Filing: 1990-12-20
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Granted: 1992-02-11
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Expires: 2010-12-20
Abstract
Abstract Disclosed is an edge-emitting semiconductor laser that has a single waveguiding structure, and that comprises means for reducing the transverse divergence of the far-field pattern of the laser emission. Typically these means comprise reflecting means (preferably transverse distributed Bragg reflectors) disposed parallel to the junction plane of the laser. Lasers according to the invention can have a highly stable single mode output having a substantially symmetrical far field pattern. Disclosed is also an advantageous method of making ridge-waveguide lasers that can, inter alia, be used to make lasers according to the invention. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.
Inventors
- 👤 Young-Kai Chen
- 👤 Minghwei Hong
- 👤 Ming-Chiang Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:48
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/2004; H01S5/2018; H01S5/2027; H01S2301/00; H01S2301/18; H01S5/10; H01S5/12; H01S5/125; H01S5/22; H01S5/2205; H01S5/2213; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
130 words
An edge-emitting semiconductor laser capable of emitting single mode radiation, associated with the laser is a junction, a longitudinal direction and, in a plane perpendicular to the longitudinal direction, a first direction that is perpendicular to the junction and a second direction that is parallel to the junction, and associated with the radiation is a far field pattern having a divergence in the first and the second direction, respectively; the laser comprising a n-doped semiconductor region and a p-doped semiconductor region, means for making electrical contact to the p-doped and n-doped semiconductor regions, respectively, and reflecting means that form an optical cavity; CHARACTERIZED IN THAT a) the laser comprises a single waveguiding structure, and furthermore comprises b) means for reducing the divergence of the far-field pattern in the first direction.
Claim 2
Dependent Claim
130 words
An edge-emitting semiconductor laser capable of emitting single mode radiation, associated with the laser is a junction, a longitudinal direction and, in a plane perpendicular to the longitudinal direction, a first direction that is perpendicular to the junction and a second direction that is parallel to the junction, and associated with the radiation is a far field pattern having a divergence in the first and the second direction, respectively; the laser comprising a n-doped semiconductor region and a p-doped semiconductor region, means for making electrical contact to the p-doped and n-doped semiconductor regions, respectively, and reflecting means that form an optical cavity; CHARACTERIZED IN THAT a) the laser comprises a single waveguiding structure, and furthermore comprises b) means for reducing the divergence of the far-field pattern in the first direction.
Claim 3
Dependent Claim
37 words
A laser according to claim 1, wherein the means of b) comprise reflector means disposed essentially parallel to the junction, and the divergence in the first direction is at most twice the divergence in the second direction.
Claim 4
Dependent Claim
52 words
A laser according to claim 2, wherein the reflector means comprise a distributed Bragg reflector that comprises a multiplicity of semiconductor layers comprising a first layer having a first refractive index and a second layer contacting the first layer and having a second refractive index that differs from the first refractive index.
Claim 5
Dependent Claim
41 words
A laser according to claim 3, wherein associated with the distributed Bragg reflector is a layer period Λ selected such that 2λ g >Λ≧λ g , where λ g is the guided wavelength in the laser of the single mode radiation.
Claim 6
Dependent Claim
32 words
A laser according to claim 4, comprising two distributed Bragg reflectors that are essentially parallel to the longitudinal direction and one or more quantum wells disposed between the two distributed Bragg reflectors.
Claim 7
Dependent Claim
15 words
A laser according to claim 3, wherein the reflector is a quasi-periodic distributed Bragg reflector.
Claim 8
Dependent Claim
164 words
Apparatus comprising a) a semiconductor laser; b) means for causing a current to flow through the laser such that the laser emits electromagnetic radiation; and c) utilization means adapted for receiving at least a part of the radiation emitted by the laser, wherein the laser is an edge-emitting laser capable of emitting single mode radiation, associated with the laser is a junction, a longitudinal direction and, in a plane perpendicular to the longitudinal direction, a first direction that is perpendicular to the junction and a second direction that is parallel to the junction, and associated with the radiation is a far field pattern having a divergence in the first and the second direction, respectively; the laser comprising a n-doped semiconductor region and a p-doped semiconductor region, means for making electrical contact to the p-doped and n-doped semiconductor regions, respectively, reflecting means that form an optical cavity, a single waveguiding structure and means for reducing the divergence of the far-field pattern in the first direction.
Claim 9
Dependent Claim
164 words
Apparatus comprising a) a semiconductor laser; b) means for causing a current to flow through the laser such that the laser emits electromagnetic radiation; and c) utilization means adapted for receiving at least a part of the radiation emitted by the laser, wherein the laser is an edge-emitting laser capable of emitting single mode radiation, associated with the laser is a junction, a longitudinal direction and, in a plane perpendicular to the longitudinal direction, a first direction that is perpendicular to the junction and a second direction that is parallel to the junction, and associated with the radiation is a far field pattern having a divergence in the first and the second direction, respectively; the laser comprising a n-doped semiconductor region and a p-doped semiconductor region, means for making electrical contact to the p-doped and n-doped semiconductor regions, respectively, reflecting means that form an optical cavity, a single waveguiding structure and means for reducing the divergence of the far-field pattern in the first direction.
Claim 10
Dependent Claim
22 words
Apparatus according to claim 7, wherein the apparatus is optical fiber communication apparatus, and the means of c) comprise an optical fiber.
Claim 11
Dependent Claim
22 words
Apparatus according to claim 7, wherein the apparatus is data processing apparatus, and the means of c) comprise optical data storage means.
References Cited (Backward Citations)
JPS6251283A
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JPS6370471A
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JPS63245984A
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JPS6470486A
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JPH02131610A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-10 | 1995-08-12 | 1996-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-10 | 1999-08-12 | 2000-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-10 | 2003-08-12 | 2004-02-11 | $7700.00 | Window Closed / Lapsed |