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US5087593A
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Preparation of titanium nitride from organometallic precursors
Assignee: Ford Motor Co
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Filing: 1990-12-10
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Granted: 1992-02-11
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Expires: 2010-12-10
Abstract
Abstract A titanium tetrahalide is reacted with at least one disilazane to prepare a titanium-containing organometallic precursor, which is thereafter pyrolyzed to form crystalline titanium nitride.
Inventors
- 👤 Chaitanya K. Narula
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:17
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C01; C01B; C01B21/00; C01B21/06; C01B21/076; C01B21/0763; C04B41/009; C04B41/45; C04B41/50; C04B41/5053; C04B41/5062; C04B41/5068; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/122; C01P; C01P2006/00; C01P2006/60
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
57 words
A process for preparing titanium nitride, consisting essentially of the steps of: (A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and (B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Claim 2
Dependent Claim
57 words
A process for preparing titanium nitride, consisting essentially of the steps of: (A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and (B) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Claim 3
Dependent Claim
17 words
The process for preparing titanium nitride according to claim 1, wherein the titanium tetrahalide is titanium tetrachloride.
Claim 4
Dependent Claim
15 words
The process for preparing titanium nitride according to claim 1, wherein the disilazane is hexamethyldisilazane.
Claim 5
Dependent Claim
26 words
The process for preparing titanium nitride according to claim 1, wherein the mole ratio of titanium tetrahalide to disilazane is from about 1:0.5 to about 1:3.
Claim 6
Dependent Claim
21 words
The process for preparing titanium nitride according to claim 4, wherein the mole ratio is from about 1:1 to about 1:2.
Claim 7
Dependent Claim
21 words
The process for preparing titanium nitride according to claim 1, wherein step A is conducted in the presence of a solvent.
Claim 8
Dependent Claim
26 words
The process for preparing titanium nitride according to claim 1, wherein step A is conducted at a temperature from about -100° C. to about 100° C.
Claim 9
Dependent Claim
24 words
The process for preparing titanium nitride according to claim 1, wherein step B is conducted at a temperature of at least about 600° C.
Claim 10
Dependent Claim
93 words
A process for preparing titanium nitride, consisting essentially of the steps of: (A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100° C. to about 100° C. and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and (B) heating the precursor to a temperature at least about 600° C. and for a period of time sufficient to pyrolyze the precursor.
Claim 11
Dependent Claim
93 words
A process for preparing titanium nitride, consisting essentially of the steps of: (A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100° C. to about 100° C. and for a period of time sufficient to prepare a titanium-containing organometallic precursor; and (B) heating the precursor to a temperature at least about 600° C. and for a period of time sufficient to pyrolyze the precursor.
Claim 12
Dependent Claim
74 words
A process for applying a layer of titanium nitride to a surface of a substrate, comprising the steps (A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; (B) applying the organometallic precursor to the surface of the substrate; and (C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Claim 13
Dependent Claim
74 words
A process for applying a layer of titanium nitride to a surface of a substrate, comprising the steps (A) contacting a titanium tetrahalide with at least one disilazane, at a temperature and for a period of time sufficient to prepare a titanium-containing organometallic precursor; (B) applying the organometallic precursor to the surface of the substrate; and (C) heating the precursor to a temperature and for a period of time sufficient to pyrolyze the precursor.
Claim 14
Dependent Claim
26 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein the titanium tetrahalide is titanium tetrachloride.
Claim 15
Dependent Claim
24 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein the disilazane is hexamethyldisilazane.
Claim 16
Dependent Claim
35 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein the mole ratio of titanium tetrahalide to disilazane is from about 1:0.5 to about 1:3.
Claim 17
Dependent Claim
30 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 13, wherein the mole ratio is from about 1:1 to about 1:2.
Claim 18
Dependent Claim
30 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein step A is conducted in the presence of a solvent.
Claim 19
Dependent Claim
35 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein step A is conducted at a temperature from about -100° C. to about 100° C.
Claim 20
Dependent Claim
33 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein step B is conducted at a temperature of at least about 600° C.
Claim 21
Dependent Claim
27 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 10, wherein steps A and B are conducted simultaneously.
Claim 22
Dependent Claim
114 words
A process for applying a layer of titanium nitride to a surface of a substrate, consisting essentially of the steps of: (A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100° C. to about 100° C. and for a period of time sufficient to prepare a titanium-containing organometallic precursor; (B) applying the organometallic precursor to the surface of the substrate; and (C) heating the precursor to a temperature of at least about 600° C. and for a period of time sufficient to pyrolyze the precursor.
Claim 23
Dependent Claim
114 words
A process for applying a layer of titanium nitride to a surface of a substrate, consisting essentially of the steps of: (A) contacting titanium tetrachloride with at least one disilazane including hexamethyldisilazane, the mole ratio of titanium tetrachloride to disilazane being from about 1:1 to about 1:2, optionally in the presence of a solvent, at a temperature from about -100° C. to about 100° C. and for a period of time sufficient to prepare a titanium-containing organometallic precursor; (B) applying the organometallic precursor to the surface of the substrate; and (C) heating the precursor to a temperature of at least about 600° C. and for a period of time sufficient to pyrolyze the precursor.
Claim 24
Dependent Claim
27 words
The process for applying a layer of titanium nitride to a surface of a substrate according to claim 19, wherein steps A and B are conducted simultaneously.
References Cited (Backward Citations)
US4482689A
Cited
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