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US5084438A
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Electronic device substrate using silicon semiconductor substrate
Assignee: NEC Corp
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Filing: 1989-03-21
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Granted: 1992-01-28
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Expires: 2009-03-21
Abstract
Abstract An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P x (Q,Ca) y Cu z O.sub.δ and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08≦x/(x+y+z)≦0.41, 0.29≦y/(x+y+z)≦0.47 and 1≦Q/Ca≦3.
Inventors
- 👤 Shogo Matsubara
- 👤 Yoichi Miyasaka
- 👤 Sadahiko Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:28
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/703; Y10S505/704
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
86 words
An electronic device substrate comprising: a silicon single-crystal substrate; a spinel epitaxial film formed on said singlecrystal substrate; and an oxide superconductor film formed on said spinel film, said oxide superconductor being represented by formula P x (Q,Ca) y Cu z O.sub.δ and containing at least one element of Sr and Ba as Q, and composition ratios falling within ranges of 0.08≦x/(x+y+z)≦0.41, 0.29≦y/(x+y+z)≦0.47 and 1≦Q/Ca≦3, and wherein δ is a stoichiometric value selected based on the stoichiometric values x, y and z to provide an oxide.
Claim 2
Dependent Claim
86 words
An electronic device substrate comprising: a silicon single-crystal substrate; a spinel epitaxial film formed on said singlecrystal substrate; and an oxide superconductor film formed on said spinel film, said oxide superconductor being represented by formula P x (Q,Ca) y Cu z O.sub.δ and containing at least one element of Sr and Ba as Q, and composition ratios falling within ranges of 0.08≦x/(x+y+z)≦0.41, 0.29≦y/(x+y+z)≦0.47 and 1≦Q/Ca≦3, and wherein δ is a stoichiometric value selected based on the stoichiometric values x, y and z to provide an oxide.
Claim 3
Dependent Claim
43 words
An electronic device substrate according to claim 1, wherein said spinel is selected from a group consisting of MgAl 2 O 4 , FeAl 2 O 4 , CoAl 2 O 4 , NiAl 2 O 4 and MnAl 2 O 4 .
Claim 4
Dependent Claim
17 words
An electronic device substrate according to claim 2, wherein said spinel is MgAl 2 O 4 .
Claim 5
Dependent Claim
24 words
An electronic device substrate according to claim 2, further comprising an MgO epitaxial film formed between said spinel film and said oxide superconductor film.
Claim 6
Dependent Claim
27 words
An electronic device substrate according to claim 3, further comprising an MgO epitaxial film formed between said MgAl 2 O 4 film and said oxide superconductor film.
Claim 7
Dependent Claim
23 words
An electronic device substrate according to claim 1, further comprising an SiO 2 film formed between said spinel film and said silicon substrate.
Claim 8
Dependent Claim
23 words
An electronic device substrate according to claim 2, further comprising an SiO 2 film formed between said spinel film and said silicon substrate.
Claim 9
Dependent Claim
76 words
An electronic device substrate according to claim 1, further comprising a dielectric film having a perovskite crystal structure represented by formula ABO 3 and containing at least one element selected from the group consisting of Pb, Ba, Sr, Mg and a rare-earth element as A and one or both of Ti and Zr as B formed between said spinel epitaxial film and said oxide superconductor film represented by formula P x (Q,Ca) y Cu z O.sub.δ.
Claim 10
Dependent Claim
66 words
An electronic device substrate according to claim 4, further comprising a dielectric film having a perovskite crystal structure represented by formula ABO 3 and containing at least one element selected from the group consisting of Pb, Ba, Sr, Mg and a rare-earth element as A and one or both of Ti and Zr as B formed between said MgO epitaxial film and said oxide superconductor film.
Claim 11
Dependent Claim
76 words
An electronic device substrate according to claim 6, further comprising a dielectric film having a perovskite crystal structure represented by formula ABO 3 and containing at least one element selected from the group consisting of Pb, Ba, Sr, Mg and a rare-earth element of A and one or both of Ti and Zr as B formed between said spinel epitaxial film and said oxide superconductor film represented by formula P x (Q,Ca) y Cu z O.sub.δ.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |