US5083175A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of using offset gated gap-cell thin film device as a photosensor
Assignee: Xerox Corp
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Filing: 1990-09-21
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Granted: 1992-01-21
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Expires: 2010-09-21
Abstract
Abstract A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally spaced from one another, a gate electrode spaced normally from the first and second injecting electrodes and located opposite the first injecting electrode, for controlling injection therefrom, and laterally offset from the second injecting electrode, and a gate dielectric layer separating the gate electrode from the first and second injecting electrodes and the charge transport layer. The method of utilization comprises applying a first electrical bias of a first magnitude to the first injecting electrode, applying a second electrical bias of a second magnitude to the second injecting electrode, inhibiting charge injection from the first injecting electrode by applying a third electrode bias to the gate electrode of a third magnitude, and illuminating the charge transport layer. The photosensor may be selectively operated in a unity gain mode or in a variable gain mode, wherein said unity gain mode is achieved by causing the second magnitude to be greater than the first magnitude and the variable gain mode is achieved by causing the second magnitude to be less than the first magnitude.
Inventors
- 👤 Michael Hack
- 👤 Malcolm J. Thompson
- 👤 Hsing C. Tuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:18
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F30/2823
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
215 words
A method of utilizing a thin film device as a photosensor comprising the steps of providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by applying a first electrical bias of a first magnitude to said first injecting electrode, applying a second electrical bias of a second magnitude to said second injecting electrode, inhibiting charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude, illuminating said charge transport layer, and selectively operating said photosensor in one of two modes of operation, said modes being a unity gain mode and a variable gain mode, wherein said unity gain mode is achieved by causing said second magnitude to be greater than said first magnitude and said variable gain mode is achieved by causing said second magnitude to be less than said first magnitude.
Claim 2
Independent Claim
215 words
A method of utilizing a thin film device as a photosensor comprising the steps of providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by applying a first electrical bias of a first magnitude to said first injecting electrode, applying a second electrical bias of a second magnitude to said second injecting electrode, inhibiting charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude, illuminating said charge transport layer, and selectively operating said photosensor in one of two modes of operation, said modes being a unity gain mode and a variable gain mode, wherein said unity gain mode is achieved by causing said second magnitude to be greater than said first magnitude and said variable gain mode is achieved by causing said second magnitude to be less than said first magnitude.
Claim 3
Dependent Claim
29 words
The method as defined in claim 1 wherein said step of inhibiting charge injection comprises causing said third magnitude to be less than or equal to said first magnitude.
Claim 4
Dependent Claim
36 words
The method as defined in claim 1 wherein said step of inhibiting charge injection comprises causing the difference between said third magnitude and said first magnitude to be less than a threshold voltage of said device.
Claim 5
Dependent Claim
30 words
The method as defined in claim 1 wherein said step of illuminating takes place over substantially the full lateral distance between said first injecting electrode and said second injecting electrode.
Claim 6
Dependent Claim
17 words
The method as defined in claim 4 wherein said step of illuminating takes place through said substrate.
Claim 7
Dependent Claim
20 words
The thin film photosensor as defined in claim 4 wherein said step of illuminating takes place through said gate electrode.
Claim 8
Dependent Claim
23 words
The thin film photosensor as defined in claim 4 wherein said step of illuminating takes place through said substrate and said gate electrode.
Claim 9
Dependent Claim
32 words
The method as defined in claim 1 wherein operating said photosensor in said unity gain mode results in a dynamic range greater than 10 3 and a gain of greater than 10.
Claim 10
Dependent Claim
36 words
A thin film photosensor as defined in claim 1 wherein operating said photosensor in said unity gain mode results in a dynamic range greater than 10 5 and a dark current of about 10 -13 amps.
Claim 11
Independent Claim
172 words
A method of utilizing a thin film device as a photosensor comprising the steps of providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by applying a first electrical bias of a first magnitude to said first injecting electrode, applying a second electrical bias of a second magnitude to said second injecting electrode, enhancing charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude, illuminating said charge transport layer, and operating said photosensor in a high gain mode regardless of the difference between said first and second magnitudes.
Claim 12
Independent Claim
172 words
A method of utilizing a thin film device as a photosensor comprising the steps of providing a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in electrical contact with said charge transport layer and being laterally spaced from one another, a gate electrode spaced normally from said first and second injecting electrodes and located opposite said first injecting electrode and laterally offset from said second injecting electrode, and a gate dielectric layer separating said gate electrode from said first and second injecting electrodes and said charge transport layer, and being characterized by applying a first electrical bias of a first magnitude to said first injecting electrode, applying a second electrical bias of a second magnitude to said second injecting electrode, enhancing charge injection from said first injecting electrode by applying a third electrical bias to said gate electrode of a third magnitude, illuminating said charge transport layer, and operating said photosensor in a high gain mode regardless of the difference between said first and second magnitudes.
Claim 13
Dependent Claim
30 words
The method as defined in claim 10 wherein said step of illuminating takes place over substantially the full lateral distance between said first injecting electrode and said second injecting electrode.
Claim 14
Dependent Claim
17 words
The method as defined in claim 10 wherein said step of illuminating takes place through said substrate.
Claim 15
Dependent Claim
20 words
The thin film photosensor as defined in claim 10 wherein said step of illuminating takes place through said gate electrode.
Claim 16
Dependent Claim
23 words
The thin film photosensor as defined in claim 10 wherein said step of illuminating takes place through said substrate and said gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |