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US4886977A Expired / Lapsed US ⏱️ 0.0 years remaining

Photoelectric converter provided with voltage dividing means

Assignee: Canon Inc
•
Filing: 1987-11-09
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Granted: 1989-12-12
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Expires: 2007-11-09
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Abstract

Abstract A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

Inventors

  • 👤 Ihachiro Gofuku
  • 👤 Yoshiyuki Osada
  • 👤 Katsumi Nakagawa
  • 👤 Katsunori Hatanaka
  • 👤 Toshihiro Saika
  • 👤 Noriyuki Kaifu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 19:11
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N1/00; H04N1/04; H04N1/19; H04N1/191; H04N1/192; H04N1/193; H04N1/1931; H10F39/191

Claims Analysis

Total Claims: 37
Claim 1
Independent Claim 113 words
A photoelectric converter comprising: a photoelectric conversion unit comprising a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode laminated with said semiconductor layer through the intermediary of an insulating layer in at least said photoreception area: a storage capacitor for storing electric charges flowing through said photoelectric conversion unit; a transfer transistor for transferring the charges stored in said storage capacitor; a discharge transistor comprising a control electrode for discharging the charges stored in said storage capacitor; and dividing means for dividing a switching voltage applied to said control electrode of said discharge transistor and for applying a divided voltage to said auxiliary electrode.
Claim 2
Dependent Claim 113 words
A photoelectric converter comprising: a photoelectric conversion unit comprising a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode laminated with said semiconductor layer through the intermediary of an insulating layer in at least said photoreception area: a storage capacitor for storing electric charges flowing through said photoelectric conversion unit; a transfer transistor for transferring the charges stored in said storage capacitor; a discharge transistor comprising a control electrode for discharging the charges stored in said storage capacitor; and dividing means for dividing a switching voltage applied to said control electrode of said discharge transistor and for applying a divided voltage to said auxiliary electrode.
Claim 3
Dependent Claim 75 words
A photoelectric converter according to claim 1, wherein said dividing means includes said storage capacitor and further comprises: a capacitance formed between said auxiliary electrode and the storage capacitor connection side of the main electrodes of said photoelectric conversion unit; and a dividing capacitor connected across said auxiliary electrode and said control electrode of said discharge transistor, wherein voltage division is effected between the switching voltage and a reference voltage applied to said storage capacitor.
Claim 4
Dependent Claim 50 words
A photoelectric converter according to claim 1, wherein said dividing means includes series connected capacitors or series connected resistors connected across said control electrode of said discharge transistor and said storage capacitor, wherein voltage division is effected between the switching voltage and a reference voltage applied to said storage capacitor.
Claim 5
Dependent Claim 16 words
A photoelectric converter according to claim 1, wherein the semiconductor layer comprises an amorphous silicon hydride.
Claim 6
Dependent Claim 16 words
A photoelectric converter according to claim 1, wherein the transfer transistor comprises a thin film transistor.
Claim 7
Dependent Claim 16 words
A photoelectric converter according to claim 1, wherein the discharge transistor comprises a thin film transistor.
Claim 8
Dependent Claim 24 words
A photoelectric converter of claim 1, wherein the photoelectric conversion unit, the transfer transistor and the discharge transistor are formed on the same substrate.
Claim 9
Dependent Claim 13 words
A photoelectric converter of claim 7, wherein the substrate is of insulating type.
Claim 10
Dependent Claim 14 words
A photoelectric converter of claim 7, wherein the substrate is of light transmission type.
Claim 11
Dependent Claim 80 words
A photoelectric converter comprising a photoelectric conversion section comprising a photoconductive layer, an insulating layer, first and second electrodes facing said photoconductive layer, and a third electrode formed on said photoconductive layer, wherein said insulating layer is interposed between said photoconductive layer and said third electrode, wherein a supply voltage is applied to said first electrode to obtain a photoelectric conversion output from said second electrode, and wherein a capacitor is formed between said second electrode and said third electrode.
Claim 12
Dependent Claim 80 words
A photoelectric converter comprising a photoelectric conversion section comprising a photoconductive layer, an insulating layer, first and second electrodes facing said photoconductive layer, and a third electrode formed on said photoconductive layer, wherein said insulating layer is interposed between said photoconductive layer and said third electrode, wherein a supply voltage is applied to said first electrode to obtain a photoelectric conversion output from said second electrode, and wherein a capacitor is formed between said second electrode and said third electrode.
Claim 13
Dependent Claim 23 words
A photoelectric converter according to claim 10, wherein said first and second electrodes are formed on a same plane of said photoconductive layer.
Claim 14
Dependent Claim 24 words
A photoelectric converter according to claim 10 wherein said third electrode is applied with a bias voltage via a resistor or a switch element.
Claim 15
Dependent Claim 19 words
A photoelectric converter according to claim 10, wherein said photoconductive layer is made of an amorphous silicon hydride film.
Claim 16
Dependent Claim 23 words
A photoelectric converter according to claim 10, wherein said photoelectric converter comprises a plurality of said photoelectric conversion sections disposed in an array.
Claim 17
Dependent Claim 16 words
A photoelectric converter according to claim 12, wherein said switch element comprises a thin film transistor.
Claim 18
Dependent Claim 17 words
A photoelectric converter according to claim 15, wherein said thin film transistor comprises amorphous silicon hydride layer.
Claim 19
Dependent Claim 83 words
A photoelectric converter comprising a photoelectric conversion section comprising a photoconductive layer, first and second electrodes formed on one plane and facing said photoconductive layer, an insulating layer, and a third electrode formed on said photoconductive layer, wherein said insulation layer is interposed between said photoconductive layer and said third electrode, wherein a supply voltage is applied to said first electrode to obtain a photoelectric conversion output from said second electrode, and wherein said second electrode is commonly connected to said third electrode.
Claim 20
Dependent Claim 83 words
A photoelectric converter comprising a photoelectric conversion section comprising a photoconductive layer, first and second electrodes formed on one plane and facing said photoconductive layer, an insulating layer, and a third electrode formed on said photoconductive layer, wherein said insulation layer is interposed between said photoconductive layer and said third electrode, wherein a supply voltage is applied to said first electrode to obtain a photoelectric conversion output from said second electrode, and wherein said second electrode is commonly connected to said third electrode.
Claim 21
Dependent Claim 19 words
A photoelectric converter according to claim 17, wherein said photoconductive layer is made of an amorphous silicon hydride film.
Claim 22
Dependent Claim 23 words
A photoelectric converter according to claim 17, wherein said photoelectric converter comprises a plurality of said photoelectric conversion sections disposed in an array.
Claim 23
Dependent Claim 22 words
A photoelectric converter according to claim 17 further comprising a switch element and a storage capacitor electrically connected to said second electrode.
Claim 24
Dependent Claim 18 words
A photoelectric converter according to claim 20, wherein said switch element is constructed of a thin film transistor.
Claim 25
Dependent Claim 18 words
A photoelectric converter according to claim 21, wherein said thin film transistor has an amorphous silicon hydride layer.
Claim 26
Dependent Claim 99 words
A photoelectric converter comprising: a photoelectric conversion section comprising a photoconductive layer, first and second electrodes facing to said photoconductive layer, and a third electrode formed on said photoconductive layer with an insulating layer interposed therebetween; a capacitor formed between said second and third electrodes; a storage capacitor electrically connected to said second electrode; first switch means electrically connected to said second electrode for discharging said storage capacitor; gate bias switch means electrically connected to said third electrode and actuated in cooperation with said switch means; and second switch means electrically connected to said second electrode for charge transfer.
Claim 27
Dependent Claim 99 words
A photoelectric converter comprising: a photoelectric conversion section comprising a photoconductive layer, first and second electrodes facing to said photoconductive layer, and a third electrode formed on said photoconductive layer with an insulating layer interposed therebetween; a capacitor formed between said second and third electrodes; a storage capacitor electrically connected to said second electrode; first switch means electrically connected to said second electrode for discharging said storage capacitor; gate bias switch means electrically connected to said third electrode and actuated in cooperation with said switch means; and second switch means electrically connected to said second electrode for charge transfer.
Claim 28
Dependent Claim 37 words
A photoelectric converter according to claim 23, wherein said photoelectric conversion section, said capacitor, said storage capacitor, said first switch means, said second switch means and said gate bias switch means are fabricated on a same substrate.
Claim 29
Dependent Claim 19 words
A photoelectric converter according to claim 23, wherein said photoconductive layer is made of an amorphous silicon hydride layer.
Claim 30
Dependent Claim 19 words
A photoelectric converter according to claim 24, wherein said first switch means is formed of a thin film transistor.
Claim 31
Dependent Claim 19 words
A photoelectric converter according to claim 24, wherein said second switch means is formed of a thin film transistor.
Claim 32
Dependent Claim 20 words
A photoelectric converter according to claim 24, wherein said gate bias switch means is formed of a thin film transistor.
Claim 33
Dependent Claim 17 words
A photoelectric converter according to claim 26, wherein said thin film transistor comprises amorphous silicon hydride layer.
Claim 34
Dependent Claim 17 words
A photoelectric converter according to claim 27, wherein said thin film transistor comprises amorphous silicon hydride layer.
Claim 35
Dependent Claim 18 words
A photoelectric converter according to claim 28, wherein said thin film transistor has an amorphous silicon hydride layer.
Claim 36
Dependent Claim 15 words
A photoelectric converter according to claim 24, wherein said substrate is made of an insulator.
Claim 37
Dependent Claim 12 words
A photoelectric converter according to claim 24, wherein said substrate comprises transparent.

References Cited (Backward Citations)

US3715485A Cited
US4352997A Cited
US4405857A Cited
US4459488A Cited
US4682019A Cited
US4667214A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-12-11 1993-06-12 1993-12-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-12-11 1997-06-12 1997-12-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-12-11 2001-06-12 2001-12-12 $7700.00 Window Closed / Lapsed

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