Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
267 words
A voltage control circuit for a semiconductor apparatus for controlling an output voltage to be applied from an external voltage source to a load circuit of said semiconductor apparatus therethrough, comprising: reference voltage generating means for generating a predetermined reference voltage according to a source voltage outputted from an external voltage source; comparing means for comparing said output voltage to be applied to said load circuit with said reference voltage generated by said reference voltage generating means, and outputting a comparison signal for representing said comparison result thereof; voltage control means for controlling said output voltage to be applied to said load circuit according to said comparison signal outputted from said comparing means; diode means for applying said source voltage outputted from said external voltage source to said load circuit in a forward direction thereof, said diode means being connected in parallel with said voltage control means; first switching means for enabling said reference voltage generating means, said comparing means and said voltage control means in response to a first control signal outputted from an external circuit when said load circuit requires a relatively large current equal to or larger than a predetermined threshold current, and for disabling said reference voltage generating means, said comparing means and said voltage control means in response to a second control signal outputted from said external circuit when said load circuit requires a relatively small current smaller than said predetermined threshold current; and second switching means for enabling said diode means in response to said second control signal, and for disabling said diode means in response to said first control signal.
Claim 2
Dependent Claim
267 words
A voltage control circuit for a semiconductor apparatus for controlling an output voltage to be applied from an external voltage source to a load circuit of said semiconductor apparatus therethrough, comprising: reference voltage generating means for generating a predetermined reference voltage according to a source voltage outputted from an external voltage source; comparing means for comparing said output voltage to be applied to said load circuit with said reference voltage generated by said reference voltage generating means, and outputting a comparison signal for representing said comparison result thereof; voltage control means for controlling said output voltage to be applied to said load circuit according to said comparison signal outputted from said comparing means; diode means for applying said source voltage outputted from said external voltage source to said load circuit in a forward direction thereof, said diode means being connected in parallel with said voltage control means; first switching means for enabling said reference voltage generating means, said comparing means and said voltage control means in response to a first control signal outputted from an external circuit when said load circuit requires a relatively large current equal to or larger than a predetermined threshold current, and for disabling said reference voltage generating means, said comparing means and said voltage control means in response to a second control signal outputted from said external circuit when said load circuit requires a relatively small current smaller than said predetermined threshold current; and second switching means for enabling said diode means in response to said second control signal, and for disabling said diode means in response to said first control signal.
Claim 3
Dependent Claim
63 words
The circuit as claimed in claim 1, wherein said semiconductor apparatus is an integrated circuit to which a chip enable signal is inputted from said external circuit, said first control signal corresponds to said chip enable signal having a first level, and said second control signal corresponds to said chip enable signal having a second level which is different from said first level.
Claim 4
Dependent Claim
67 words
The circuit as claimed in claim 1, wherein said first switching means comprises: a first transistor for controlling the action of said reference signal generating means; a second transistor for controlling the action of said comparing means; and a third transistor for controlling the action of said voltage control means, and said second switching means comprises a fourth transistor for controlling the action of said diode means.
Claim 5
Dependent Claim
61 words
The circuit as claimed in claim 3, wherein said first transistor is an N type metal oxide semiconductor field effect transistor; said second transistor is an N type metal oxide semiconductor field effect transistor; said third transistor is a P type metal oxide semiconductor field effect transistor; and said fourth transistor is a P type metal oxide semiconductor field effect transistor.
Claim 6
Dependent Claim
67 words
The circuit as claimed in claim 2, wherein said first switching means comprises: a first transistor for controlling the action of said reference signal generating means; a second transistor for controlling the action of said comparing means; and a third transistor for controlling the action of said voltage control means, and said second switching means comprises a fourth transistor for controlling the action of said diode means.
Claim 7
Dependent Claim
61 words
The circuit as claimed in claim 5, wherein said first transistor is an N type metal oxide semiconductor field effect transistor; said second transistor is an N type metal oxide semiconductor field effect transistor; said third transistor is a P type metal oxide semiconductor field effect transistor; and said fourth transistor is a P type metal oxide semiconductor field effect transistor.
Claim 8
Dependent Claim
25 words
The circuit as claimed in claim 1, wherein said comparing means is an error amplifier, and said voltage control means is a field effect transistor.
Claim 9
Dependent Claim
25 words
The circuit as claimed in claim 2, wherein said comparing means is an error amplifier, and said voltage control means is a field effect transistor.