Image sensor array using two stage transfer having improved uniformity

Claim 2

A process for reducing non-uniformities at the output of image sensor chips when injecting bias charge onto the array of sensors resulting from transistor threshold mismatches, in which said sensor chips have an array of sensors; a common output bus to which the image charges accumulated by said sensors during an integration period are transferred to; and a two stage transfer circuit coupling each of said sensors on a chip with said output bus each having first and second transistors disposed in series with one another, and an amplifier between said transistor circuit and siad output bus for amplifying the image charges output by said sensors, comprising the steps of: a) providing a bias charge for application to a node between said first and second transistors of said two stage transfer circuits for use in setting the bias charge on said sensors; b) concurrently appying a bias charge transfer pulse to the first transistor of each of said two stage transfer circuits so that said first transistors function as metering gates to inject a limited amount of said bias charge on said sensors independently of the first transistors threshold voltages; c) applying a reset voltage to a node between the second transistor and the amplifier of each of said two stage transfer circuits at the input of said amplifiers to reset said amplifiers for transfer of the image signal charges from said sensors to said amplifiers; and d) thereafter applying an image signal charge transfer pulse having an amplitude different from the amplitude of said bias charge transfer pulse to said first and second transistors of said two stage transfer circuits to pass the image signal charges accumulated on said sensors to said amplifiers for amplification and transfer to said output bus.

Claim 3

The process according to claim 1 including the steps of: providing a bias charge transfer pulse with an amplitude less than the amplitude of said image signal charge transfer pulse.

Claim 4

The process according to claim 1 including the steps of: providing an image signal charge transfer pulse to the first transistors that is less than the image signal charge transfer pulse provided to said second transistors to facilitate transfer of said image signal charges to said amplifiers.

Claim 5

The process according to claim 3 including the steps of: providing a bias charge that is substantially equal to the amplitude of the image signal charge transfer pulse to said second transistors.

Claim 6

A sensor array with improved uniformity and reduced cell-to-cell variations resulting from transistor threshold mismatches, comprising the combination of: a) an array of sensors; b) a common output bus to which the image signal charges accumulated by said sensors during an integration period are transferred to; c) a two stage transfer circuit coupling each of said sensors with said output bus, said transfer circuit having first and second transistors disposed in series with one another; d) amplifier means between said second transistor and said output bus for amplifying the image signal charges output by said sensors; e) first means providing a bias charge for application to a node between said first and second transistors of said two stage transfer circuits for use in setting the bias charge on said sensors; f) second means providing a bias charge transfer pulse to the first transistor of each of said two stage transfer circuits so that said first transistors function as metering gates to inject a limited amount of said bias charge on said sensors independently of the first transistors threshold voltages; g) third means providing a reset voltage to a node between the second transistor and the amplifier of each of said two stage transfer circuits to reset said amplifiers for transfer of the image signal charges from said sensors to said amplifiers following application of said bias charge; and h) fourth means for subsequently appying an image signal charge transfer pulse to said first and second transistors of said two stage transfer circuits to pass the image signal charges accumulated on said sensors to said amplifiers for amplification and transfer to said output bus, said image signal charge transfer pulse applied by said fourth means being different than the bias charge transfer pulse provided by said second means.

Claim 7

A sensor array with improved uniformity and reduced cell-to-cell variations resulting from transistor threshold mismatches, comprising the combination of: a) an array of sensors; b) a common output bus to which the image signal charges accumulated by said sensors during an integration period are transferred to; c) a two stage transfer circuit coupling each of said sensors with said output bus, said transfer circuit having first and second transistors disposed in series with one another; d) amplifier means between said second transistor and said output bus for amplifying the image signal charges output by said sensors; e) first means providing a bias charge for application to a node between said first and second transistors of said two stage transfer circuits for use in setting the bias charge on said sensors; f) second means providing a bias charge transfer pulse to the first transistor of each of said two stage transfer circuits so that said first transistors function as metering gates to inject a limited amount of said bias charge on said sensors independently of the first transistors threshold voltages; g) third means providing a reset voltage to a node between the second transistor and the amplifier of each of said two stage transfer circuits to reset said amplifiers for transfer of the image signal charges from said sensors to said amplifiers following application of said bias charge; and h) fourth means for subsequently appying an image signal charge transfer pulse to said first and second transistors of said two stage transfer circuits to pass the image signal charges accumulated on said sensors to said amplifiers for amplification and transfer to said output bus, said image signal charge transfer pulse applied by said fourth means being different than the bias charge transfer pulse provided by said second means.

Claim 8

The sensor array according to claim 5 in which the amplitude of the bias charge transfer pulse provided by said second means is less than the amplitude of the image signal transfer pulse provided by said fourth means.

Claim 9

The sensor array according to claim 5 in which the image charge transfer pulse provided by said fourth means to said second transistors is greater than the image charge transfer pulse provided by said fourth means to said first transistors to facilitate transfer of said image signal charges to said amplifiers.

Claim 10

The sensor array according to claim 7 in which the level of the bias charge provided by said first means is substantially equal to the level of the image charge transfer pulse provided by said fourth means to said second transistors.