Processing apparatus

Claim 2

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into the processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: said processing chamber, being adapted to be movable relative to said heating section, to a position outside said heating section; and an insertion jig for inserting said object into said processing chamber, said jig being adapted to be movable relative to said heating section, whereby the operating of loading and unloading said object into and from said processing chamber effected by said insertion jig can be conducted outside said heating section.

Claim 3

A processing apparatus according to claim 1, wherein said processing chamber and said insertion jig are each individually moved relative to said heating section in the vertical direction.

Claim 4

A processing apparatus according to claim 1, wherein said object is a wafer.

Claim 5

A processing apparatus according to claim 1, wherein said processing apparatus is a thermal oxide film forming apparatus.

Claim 6

A processing apparatus according to claim 1, wherein said processing chamber and said insertion jig are independently movable relative to each other.

Claim 7

A processing apparatus according to claim 1, wherein each of said heating section and processing chamber extend in a vertical direction, and each of the processing chamber and insertion jig are adapted to be movable in the vertical direction.

Claim 8

A processing apparatus according to claim 1, further including feed gas means for feeding processing gases to the processing chamber and exhaust gas means for removing exhaust gases from the processing chamber, with each of the feed gas means and the exhaust gas means passing into the processing chamber at an end of the processing chamber through which the insertion jig inserts the object into the processing chamber.

Claim 9

A processing apparatus according to claim 7, wherein the processing chamber is vertical, and each of the feed gas means and the exhaust gas means pass into the processing chamber at the lower end thereof.

Claim 10

A processing apparatus according to claim 8, wherein the upper end of the processing chamber is closed.

Claim 11

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into said processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: an insertion jig, movable for inserting said object into said processing chamber through an opening provided in said processing chamber, the insertion jig being movable to a position outside of said processing chamber and said heating section; and an auxiliary tube, on which is provided said insertion jig, said auxiliary tube being adapted to be movable relative to movement of said insertion jig and detachably connected to the opening of said processing chamber, and adapted to be movable to a position outside of said processing chamber and said heating section, whereby the operation of loading and unloading said object into and from said auxiliary tube by said insertion jig, for loading and unloading said object into and from said processing chamber, can be conducted outside the heating section.

Claim 12

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into said processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: an insertion jig, movable for inserting said object into said processing chamber through an opening provided in said processing chamber, the insertion jig being movable to a position outside of said processing chamber and said heating section; and an auxiliary tube, on which is provided said insertion jig, said auxiliary tube being adapted to be movable relative to movement of said insertion jig and detachably connected to the opening of said processing chamber, and adapted to be movable to a position outside of said processing chamber and said heating section, whereby the operation of loading and unloading said object into and from said auxiliary tube by said insertion jig, for loading and unloading said object into and from said processing chamber, can be conducted outside the heating section.

Claim 13

A processing apparatus according to claim 10, wherein the direction of movement of said insertion jig is vertical.

Claim 14

A processing apparatus according to claim 10, wherein said auxiliary tube is extended in the axial direction of said processing chamber.

Claim 15

A processing apparatus according to claim 10, wherein said object is a wafer.

Claim 16

A processing apparatus according to claim 10, wherein said processing apparatus is a thermal oxide film forming apparatus.

Claim 17

A processing apparatus according to claim 10, wherein said object is disposed in such a manner that the plane thereof extends parallel to the direction of flow of said processing fluid supplied into said processing chamber.

Claim 18

A processing apparatus according to claim 10, wherein said auxiliary tube has a bottom adapted to cover said opening provided in said processing chamber and sides extending from said bottom and adapted to surround sides of the processing chamber, the sides of the auxiliary tube having a length such that the sides thereof can cover substantially the entire length of the processing chamber.

Claim 19

A processing apparatus according to claim 10, wherein said insertion jig is adapted to be movable into said processing chamber independently of movement of said auxiliary tube.

Claim 20

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into the processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: said processing chamber being surrounded at the side peripheral surface thereof by said heating section and adapted to be movable relative to said heating section to a position outside said heating section.

Claim 21

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into the processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: said processing chamber being surrounded at the side peripheral surface thereof by said heating section and adapted to be movable relative to said heating section to a position outside said heating section.

Claim 22

A processing apparatus according to claim 18, wherein said processing chamber is moved relative to said heating section in the vertical direction.

Claim 23

A processing apparatus according to claim 18, further comprising: an exhaust pipe connected to said processing chamber; and a vacuum device connected to said exhaust pipe, whereby said processing chamber can be evacuated by said vacuum device.

Claim 24

A processing apparatus according to claim 18, further comprising: a closure detachably provided at an opening which is provided in said processing chamber for loading and unloading said object.

Claim 25

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into the processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: said processing chamber being surrounded at the side peripheral surface thereof by said heating section and adapted to be movable relative to said heating section, to a position outside of said heating section; an insertion jig for inserting said object into said processing chamber through an opening provided in said processing chamber; and an auxiliary tube, on which is provided said insertion jig, said auxiliary tube being adapted to be movable relative to movement of said insertion jig and detachably connected to the opening of said processing chamber.

Claim 26

A processing apparatus wherein an object to be processed is positioned inside a processing chamber heated to a predetermined temperature by a heating section, and a processing fluid is supplied into the processing chamber, thereby subjecting said object to a predetermined processing, said apparatus comprising: said processing chamber being surrounded at the side peripheral surface thereof by said heating section and adapted to be movable relative to said heating section, to a position outside of said heating section; an insertion jig for inserting said object into said processing chamber through an opening provided in said processing chamber; and an auxiliary tube, on which is provided said insertion jig, said auxiliary tube being adapted to be movable relative to movement of said insertion jig and detachably connected to the opening of said processing chamber.

Claim 27

A processing apparatus according to claim 22, wherein said insertion jig is adapted to be movable into said processing chamber independently of movement of said auxiliary tube.

Claim 28

A processing apparatus according to claim 22, wherein said processing chamber and said insertion jig are individually moved relative to said heating section in the vertical direction.

Claim 29

A processing apparatus according to claim 22, wherein said auxiliary tube is extended in the axial direction of said processing chamber.

Claim 30

A processing apparatus according to claim 22, further comprising: an exhaust pipe connected to said processing chamber; and a vacuum device connected to said exhaust pipe, whereby said processing chamber can be evacuated by said vacuum device.

Claim 31

A processing apparatus according to claim 22, further comprising: a closure detachably provided at the opening which is provided in said processing chamber for loading and unloading said object.

Claim 32

Apparatus for treating semiconductor wafers, comprising: (a) a vertical thermal treatment furnace, the vertical thermal treatment furnace including cylindrical heating means having a cylindrical cavity therethrough lengthwise in which the semiconductor wafers are to be situated during a thermal treatment in the vertical thermal treatment furnace, the cavity having an axis which extends substantially in the vertical direction, the cavity having an opening, for loading and unloading wafers, disposed at one end thereof, the furnace also including a wafer holder for loading and unloading the wafers into and out of the cavity, whereby the wafers are supported by the wafer holder and disposed along the axis of the cavity; (b) a cylindrical process tube, the process tube having a diameter smaller than the cavity; (c) means for arranging the wafer holder, having the wafers supported thereon, within the process tube, the means for arranging the wafer holder being provided so as to arrange the wafer holder in the process tube with the process tube substantially outside the cavity; (d) means for moving the wafers and process tube relative to the cavity, whereby the wafers, supported by the wafer holder, can be positioned in the cavity, so as to move the wafers into the cavity through the opening, both the process tube and wafers being moved to position the wafers in the cavity; and (e) means for unloading the wafers in the cavity out of the cavity, through said opening.

Claim 33

Apparatus for treating semiconductor wafers, comprising: (a) a vertical thermal treatment furnace, the vertical thermal treatment furnace including cylindrical heating means having a cylindrical cavity therethrough lengthwise in which the semiconductor wafers are to be situated during a thermal treatment in the vertical thermal treatment furnace, the cavity having an axis which extends substantially in the vertical direction, the cavity having an opening, for loading and unloading wafers, disposed at one end thereof, the furnace also including a wafer holder for loading and unloading the wafers into and out of the cavity, whereby the wafers are supported by the wafer holder and disposed along the axis of the cavity; (b) a cylindrical process tube, the process tube having a diameter smaller than the cavity; (c) means for arranging the wafer holder, having the wafers supported thereon, within the process tube, the means for arranging the wafer holder being provided so as to arrange the wafer holder in the process tube with the process tube substantially outside the cavity; (d) means for moving the wafers and process tube relative to the cavity, whereby the wafers, supported by the wafer holder, can be positioned in the cavity, so as to move the wafers into the cavity through the opening, both the process tube and wafers being moved to position the wafers in the cavity; and (e) means for unloading the wafers in the cavity out of the cavity, through said opening.

Claim 34

Apparatus according to claim 28, wherein the means for moving the wafers and process tube moves the wafers into the cavity such that the wafers are disposed at a substantially central location of said cavity.

Claim 35

Apparatus according to claim 29, wherein said axis is the axis of the cylindrical cavity.

Claim 36

Apparatus according to claim 29, further comprising an inert gas supply means for providing the process tube with an inert gas during loading the wafers to prevent the outside air from being induced to enter the process tube in a vicinity of the wafers.

Claim 37

Apparatus according to claim 31, wherein the process tube has such a length that it extends lengthwise over the wafers so as to be able to prevent the outside air from being induced to enter the process tube to a location adjacent the wafers.

Claim 38

Apparatus according to claim 32, further comprising a reaction gas supply means for providing the process tube with a reaction gas during the thermal treatment.

Claim 39

Apparatus according to claim 28, wherein the heating means is disposed adjacent the cavity, and wherein the means for moving the wafers and process tube moves the wafers from a location away from the heating means to a location in the cavity adjacent the heating means.

Claim 40

Apparatus according to claim 28, wherein the means for moving the wafers and process tube moves the wafers into the cavity while the wafers are in the process tube, the wafers and process tube being moved to position both the wafers and process tube in the cavity, the wafers being positioned adjacent the heating means.

Claim 41

Apparatus according to claim 28, wherein the means for moving the wafers and process tube also moves the process tube into the cavity.

Claim 42

Apparatus according to claim 36, wherein the means for moving the wafers and process tube moves the wafers into the cavity while the wafers are in the process tube, the wafers and process tube being moved together to position both the wafers and process tube in the cavity, the wafers being positioned adjacent the heating means.

Claim 43

Apparatus for fabricating semiconductor integrated circuits utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace having cylindrical heating means having a cylindrical cavity therethrough lengthwise and adapted to be maintained at a relatively high temperature, as compared to the temperature outside the cavity, the axis of said cylindrical cavity being substantially vertical, the cylindrical cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder for supporting the wafers, the wafers being supported such that the wafers are arranged along the axis of the cylindrical cavity; (b) a process tube, having a diameter smaller than the cavity; (c) means for associating the wafers with the wafer holder, such that said associating is performed outside the cavity, the wafers extending over a length; (d) means for accommodating the wafers, associated with the wafer holder, in said process tube, the process tube having such a length, longer than the length that the wafers extend, that outside air is prevented from being introduced into the process tube to the wafers associated with the wafer holder; (e) means for loading the wafers, that are associated with the wafer holder and inside the process tube, into the cavity such that the wafers are loaded into the cavity to a substantially central position therein, the means for loading the wafers associated with the wafer holder and in the process tube acting to load the wafers into the cavity by moving, relative to the cavity, both the wafers associated with the wafer holder and the process tube so that the wafers are always positioned in the process tube during said loading; (f) means for providing the process tube with an inert gas during the loading so as to prevent air outside the process tube from entering the process tube and reaching the wafers on the wafer holder; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 44

Apparatus for fabricating semiconductor integrated circuits utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace having cylindrical heating means having a cylindrical cavity therethrough lengthwise and adapted to be maintained at a relatively high temperature, as compared to the temperature outside the cavity, the axis of said cylindrical cavity being substantially vertical, the cylindrical cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder for supporting the wafers, the wafers being supported such that the wafers are arranged along the axis of the cylindrical cavity; (b) a process tube, having a diameter smaller than the cavity; (c) means for associating the wafers with the wafer holder, such that said associating is performed outside the cavity, the wafers extending over a length; (d) means for accommodating the wafers, associated with the wafer holder, in said process tube, the process tube having such a length, longer than the length that the wafers extend, that outside air is prevented from being introduced into the process tube to the wafers associated with the wafer holder; (e) means for loading the wafers, that are associated with the wafer holder and inside the process tube, into the cavity such that the wafers are loaded into the cavity to a substantially central position therein, the means for loading the wafers associated with the wafer holder and in the process tube acting to load the wafers into the cavity by moving, relative to the cavity, both the wafers associated with the wafer holder and the process tube so that the wafers are always positioned in the process tube during said loading; (f) means for providing the process tube with an inert gas during the loading so as to prevent air outside the process tube from entering the process tube and reaching the wafers on the wafer holder; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 45

Apparatus according to claim 38, wherein the means for loading the wafers associated with the wafer holder loads the wafers by moving the wafer holder, whereby both the wafer holder and the process tube are moved in loading the wafers into the cavity.

Claim 46

Apparatus according to claim 38, wherein the means for providing the process tube with the inert gas provides the inert gas from one end of the process tube.

Claim 47

Apparatus according to claim 40, wherein the means for supplying the process tube with a reaction gas provides the reaction gas from said one end of the process tube.

Claim 48

Apparatus according to claim 38, wherein the means for accommodating the wafers in the process tube introduces the wafers into the process tube through a first end of the process tube, and wherein the process tube is open-ended at a second end thereof, other than said first end.

Claim 49

Apparatus according to claim 42, wherein the means for supplying the process tube with the inert gas provides the inert gas from said another end of the process tube.

Claim 50

Apparatus according to claim 43, wherein the means for supplying the process tube with the reaction gas provides the reaction gas from said another end of the process tube.

Claim 51

Apparatus for fabricating semiconductor integrated circuits utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cylindrical cavity therethrough lengthwise to be maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder for supporting the wafers, the wafers being supported such that the wafers are arranged along a rotational symmetric axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for associating the wafers with the wafer holder, such that said associating is performed outside the cavity, the wafers being adapted to extend over a length of the holder in the direction of the symmetric axis of the cavity; (d) means for accommodating the wafers, associated with the holder, inside the round tubular process tube along a rotational symmetric axis thereof, the process tube extending over the entire length of the wafers associated with the holder; (e) means for loading the wafers, associated with the holder and inside the process tube, into the cavity so that both the wafers and the holder do not contact the inner surface of the process tube, the means for loading the wafers acting to load the wafers into the cavity to a substantially central position therein, the means for loading the wafers moving both the process tube and wafers relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying a purge gas to the process tube, during loading the wafers, to purge outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 52

Apparatus for fabricating semiconductor integrated circuits utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cylindrical cavity therethrough lengthwise to be maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder for supporting the wafers, the wafers being supported such that the wafers are arranged along a rotational symmetric axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for associating the wafers with the wafer holder, such that said associating is performed outside the cavity, the wafers being adapted to extend over a length of the holder in the direction of the symmetric axis of the cavity; (d) means for accommodating the wafers, associated with the holder, inside the round tubular process tube along a rotational symmetric axis thereof, the process tube extending over the entire length of the wafers associated with the holder; (e) means for loading the wafers, associated with the holder and inside the process tube, into the cavity so that both the wafers and the holder do not contact the inner surface of the process tube, the means for loading the wafers acting to load the wafers into the cavity to a substantially central position therein, the means for loading the wafers moving both the process tube and wafers relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying a purge gas to the process tube, during loading the wafers, to purge outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 53

Apparatus according to claim 45, wherein said means for loading the wafers into the cavity moves the process tube into the cavity when the wafers are loaded into the cavity.

Claim 54

Apparatus according to claim 46, wherein the means for unloading the wafers, associated with the holder and inside the process tube, unloads the wafers out of the cavity by moving, relative to the cavity, the process tube end of the wafers to position the wafers outside the cavity, so that both the wafers and the holder do not contact the inner surface of the process tube, and wherein the apparatus further comprises means for supplying a purge gas during said unloading, for purging outside air and a reaction gas in the process tube.

Claim 55

Apparatus according to claim 47, wherein said process tube has upper and lower ends.

Claim 56

Apparatus according to claim 48, wherein the means for supplying the reaction gas supplies the reaction gas through the lower end, or the vicinity thereof, into the process tube.

Claim 57

Apparatus according to claim 49, wherein the process tube is closed at the upper end.

Claim 58

Apparatus according to claim 50, wherein the means for supplying the purge gas to the process tube, during loading and unloading, provides the purge gas through the lower end, or the vicinity thereof, into the process tube.

Claim 59

Apparatus according to claim 51, wherein the means for supplying the reaction gas and the means for supplying the purge gas provide the respective gases through at least one gas supply pipe entering the process tube through the lower end of the process tube or in the vicinity thereof, and at least one outlet of the gas supply is disposed at the upper end and inside the process tube.

Claim 60

Apparatus for fabricating semiconductor devices utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cylindrical cavity therethrough lengthwise maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder associated with the wafers, for supporting the wafers, the wafers being supported such that the wafers are arranged along a rotational symmetric axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for arranging the wafers associated with the wafer holder, such that the arranging is performed outside the cavity, the wafers being adapted to extend over a length of the holder in the direction of the symmetric axis of the cavity; (d) means for accommodating the wafers, associated with the holder, inside the round tubular process tube along a rotational symmetric axis thereof, the process tube extending over the entire length of the wafers associated with the holder; (e) means for loading the wafers, associated with the holder and inside the process tube, into the cavity, such that the wafers are loaded into the cavity to a substantially central position therein, the means for loading the wafers moving both the process tube and wafers relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying a purge gas to the process tube, during loading the wafers, to purge outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 61

Apparatus for fabricating semiconductor devices utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cylindrical cavity therethrough lengthwise maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder associated with the wafers, for supporting the wafers, the wafers being supported such that the wafers are arranged along a rotational symmetric axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for arranging the wafers associated with the wafer holder, such that the arranging is performed outside the cavity, the wafers being adapted to extend over a length of the holder in the direction of the symmetric axis of the cavity; (d) means for accommodating the wafers, associated with the holder, inside the round tubular process tube along a rotational symmetric axis thereof, the process tube extending over the entire length of the wafers associated with the holder; (e) means for loading the wafers, associated with the holder and inside the process tube, into the cavity, such that the wafers are loaded into the cavity to a substantially central position therein, the means for loading the wafers moving both the process tube and wafers relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying a purge gas to the process tube, during loading the wafers, to purge outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 62

Apparatus according to claim 53, wherein the means for loading the wafers into the cavity moves the process tube into the cavity when the wafers are loaded into the cavity.

Claim 63

Apparatus according to claim 54, wherein the means for unloading the wafers, associated with the holder and inside the process tube, unloads the wafers out of the cavity by moving, relative to the cavity, the process tube and the wafers to position the wafers outside the cavity, and wherein the apparatus further comprises means for supplying a purge gas during said unloading, for purging outside air and a reaction gas in the process tube.

Claim 64

Apparatus according to claim 55, wherein the process tube has upper and lower ends.

Claim 65

Apparatus according to claim 56, wherein the means for supplying the reaction gas supplies the reaction gas through the lower end, or the vicinity thereof, of the process tube.

Claim 66

Apparatus according to claim 57, wherein the process tube is closed at the upper end.

Claim 67

Apparatus according to claim 58, wherein the means for supplying the purge gas supplies the purge gas through the lower end, or the vicinity thereof, of the process tube.

Claim 68

Apparatus according to claim 59, wherein the means for supplying reaction gas and the means for supplying the purge gas include at least one gas supply pipe entering the process tube through the lower end, or the vicinity thereof, and at least one outlet of the pipe is disposed at the upper end and inside of the process tube.

Claim 69

Apparatus for fabricating semiconductor devices utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cavity therethrough lengthwise maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder, associated with the wafers, for supporting the wafers, the wafers to be supported such that the wafers are arranged along a vertical axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for arranging the wafers so as to be associated with the wafer holder, such that the arranging is performed outside the cavity, the wafers extending over a length of the holder in the direction of the vertical axis of the cavity; (d) means for accommodating the wafers, associated with the wafer holder, inside the round tubular process tube along a vertical axis thereof, the process tube extending over the entire extending length of the wafers associated with the wafer holder; (e) means for loading the wafers, associated with the wafer holder and inside the process tube, into the cavity, such that the wafers are loaded into the cavity to a substantially central position therein, both the process tube and wafers being moved relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying the process tube with a gas during said loading, for purging outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 70

Apparatus for fabricating semiconductor devices utilizing semiconductor wafers, comprising: (a) a vertical thermal treatment furnace including a vertical tubular heating means having a vertical cavity therethrough lengthwise maintained at a relatively high temperature as compared to the temperature outside the cavity, the cavity having an opening at one end thereof for loading and unloading the semiconductor wafers, the furnace further including a wafer holder, associated with the wafers, for supporting the wafers, the wafers to be supported such that the wafers are arranged along a vertical axis of the cavity; (b) a round tubular process tube, having an outer diameter smaller than that of the cavity; (c) means for arranging the wafers so as to be associated with the wafer holder, such that the arranging is performed outside the cavity, the wafers extending over a length of the holder in the direction of the vertical axis of the cavity; (d) means for accommodating the wafers, associated with the wafer holder, inside the round tubular process tube along a vertical axis thereof, the process tube extending over the entire extending length of the wafers associated with the wafer holder; (e) means for loading the wafers, associated with the wafer holder and inside the process tube, into the cavity, such that the wafers are loaded into the cavity to a substantially central position therein, both the process tube and wafers being moved relative to the cavity to position the wafers at the substantially central position in the cavity; (f) means for supplying the process tube with a gas during said loading, for purging outside air in the process tube; (g) means for supplying the process tube with a reaction gas during a heat treatment performed by the vertical thermal treatment furnace; and (h) means for unloading the wafers associated with the wafer holder out of the cavity, through the opening.

Claim 71

Apparatus according to claim 61, wherein the means for loading the wafers into the cavity moves the process tube into the cavity when the wafers are loaded into the cavity.

Claim 72

Apparatus according to claim 62, wherein the means for unloading the wafers, associated with the holder and inside the process tube, unloads the wafers out of the cavity by moving, relative to the cavity, the process tube and the wafers to position the wafers outside the cavity, and wherein the apparatus further includes means for supplying a gas to the process tube, for purging outside air and reaction gas during said unloading.

Claim 73

Apparatus according to claim 63, wherein the process tube has upper and lower ends.

Claim 74

Apparatus according to claim 64, wherein the means for supplying the reaction gas supplies the reaction gas through the lower end of the process tube, or the vicinity thereof.

Claim 75

Apparatus according to claim 65, wherein the process tube is closed at the upper end.

Claim 76

Apparatus according to claim 66, wherein the means for supplying gas for purging during loading and unloading supplies the purge gas through the lower end, or the vicinity thereof, of the process tube.

Claim 77

Apparatus according to claim 67, wherein the means for supplying the reaction gas and the means for supplying the gas for purging during loading and unloading supplies the respective gas through at least one gas supply pipe entering the process tube through the lower end or the vicinity thereof, and at least one outlet of the pipe is disposed at the upper end and inside of the process tube.