US5079620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Split-gate field effect transistor
Assignee: University of Minnesota System
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Filing: 1991-03-04
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Granted: 1992-01-07
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Expires: 2011-03-04
Abstract
Abstract A field effect transistor having a gate voltage swing in the transistor channel varying as a function of position between the drain and the source. The gate voltage swing in the transistor channel may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device may be used by applying a voltage between the gates. In both cases, the electric field near the source is raised to accelerate the electrons thereby decreasing electron transit time.
Inventors
- 👤 Michael Shur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:34
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10D30/80; H10D30/87; H10D30/873; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
122 words
A field effect transistor comprising: a drain region including a drain contact; a source region including a source contact; a single n channel region including at least one gate contact, the n channel region extending between the drain region and the source region, the n channel region having a depth; and an ion implantation region in the n channel region adjacent the drain region, the ion implantation region extending into the n channel region to a common depth with the n channel region, wherein V t in the n channel region is less positive in the ion implantation region of the n channel region than it is in the remainder of the n channel region which is outside the ion implantation region.
Claim 2
Dependent Claim
122 words
A field effect transistor comprising: a drain region including a drain contact; a source region including a source contact; a single n channel region including at least one gate contact, the n channel region extending between the drain region and the source region, the n channel region having a depth; and an ion implantation region in the n channel region adjacent the drain region, the ion implantation region extending into the n channel region to a common depth with the n channel region, wherein V t in the n channel region is less positive in the ion implantation region of the n channel region than it is in the remainder of the n channel region which is outside the ion implantation region.
Claim 3
Dependent Claim
122 words
A field effect transistor comprising: a drain region including a drain contact; a source region including a source contact; a single p channel region including at least one gate contact, the p channel region extending between the drain region and the source region, the p channel region having a depth; and an ion implantation region in the p channel region adjacent the drain region, the ion implantation region extending into the p channel region to a common depth with the p channel region, wherein V t in the p channel region is less negative in the ion implantation region of the p channel region than it is in the remainder of the p channel region which is outside the ion implantation region.
Claim 4
Dependent Claim
122 words
A field effect transistor comprising: a drain region including a drain contact; a source region including a source contact; a single p channel region including at least one gate contact, the p channel region extending between the drain region and the source region, the p channel region having a depth; and an ion implantation region in the p channel region adjacent the drain region, the ion implantation region extending into the p channel region to a common depth with the p channel region, wherein V t in the p channel region is less negative in the ion implantation region of the p channel region than it is in the remainder of the p channel region which is outside the ion implantation region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |