US5079594A
Expired / Lapsed
US
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Nonlinear optical thin-film
Assignee: Panasonic Holdings Corp
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Filing: 1990-06-26
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Granted: 1992-01-07
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Expires: 2010-06-26
Abstract
Abstract Nonlinear optical thin-films are disclosed. The nonlinear optical thin-film is comprised of a substrate, superlattice thin films formed separated on the surface of the substrate and a cover thin film of an insulating material or a semiconductor which covers the surface of the substrate on which the superlattice thin films are formed. Each superlattice thin film is formed by depositing two kinds of semiconductors having different band-gap energies alternatively.
Inventors
- 👤 Tsuneo Mitsuyu
- 👤 Kazuhiro Ohkawa
- 👤 Takeshi Karasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:43
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/355; G02F1/3556; B; B82; B82Y; B82Y20/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
107 words
Nonlinear optical thin-film comprising a substrate, a plurality of superlattice thin films spaced apart from each other on one surface of said substrate, each of said superlattice thin films being formed by stacking layers of two kinds of semiconductors having band-gap energies different from each other, alternately and a cover thin film made of a semiconductor or an insulator being formed so as to cover at least the areas of said one surface of said substrate not covered by said superlattice thin films, said semiconductor or insulator of said cover thin film having a band-gap energy wider than that of both of said two kinds of semiconductors.
Claim 2
Dependent Claim
107 words
Nonlinear optical thin-film comprising a substrate, a plurality of superlattice thin films spaced apart from each other on one surface of said substrate, each of said superlattice thin films being formed by stacking layers of two kinds of semiconductors having band-gap energies different from each other, alternately and a cover thin film made of a semiconductor or an insulator being formed so as to cover at least the areas of said one surface of said substrate not covered by said superlattice thin films, said semiconductor or insulator of said cover thin film having a band-gap energy wider than that of both of said two kinds of semiconductors.
Claim 3
Dependent Claim
26 words
The nonlinear optical thin-film as claimed in claim 1, in which said cover thin film is also formed over the top of said superlattice thin films.
Claim 4
Dependent Claim
41 words
The nonlinear optical thin-film as claimed in claim 1, in which thicknesses of respective layers of two kinds of semiconductors are chosen so as to form quantum levels of electrons and holes and to confine electrons and holes in respective layers.
Claim 5
Dependent Claim
51 words
The nonlinear optical thin-film as claimed in claim 1, in which each of said superlattice thin film is formed to have a linear configuration and the width of said linear configuration is chosen to be smaller than or equal to two times as long as the Bohr radius of an exciton.
Claim 6
Dependent Claim
50 words
The nonlinear optical thin-film as claimed in claim 1, in which each of said superlattice thin film is formed to have a circular configuration and the diameter of said circular superlattice thin film is smaller than or equal to two times as long as the Bohr radius of an exciton.
Claim 7
Dependent Claim
36 words
The nonlinear optical thin-film as claimed in claim 1, in which the minimum distance between adjacent superlattice thin films is chosen at a minimum length needed for confining electrons and holes in respective superlattice thin films.
Claim 8
Dependent Claim
24 words
The nonlinear optical thin-film as claimed in claim 1, in which said superlattice thin film is formed with group III - V compound semiconductors.
Claim 9
Dependent Claim
28 words
The nonlinear optical thin-film as claimed in any of claims 1 to 6, in which said superlattice thin film is formed with group II - VI compound semiconductors.
Claim 10
Dependent Claim
81 words
The nonlinear optical thin-film as claimed in claim 8, in which said group II - VI compound semiconductors are selected among a group of ZnS x Se l-x , CdS x Se l-x , Zn x Cds l-x S, Zn x Cd l-x Se, Zn x Cd l-x Te, Zn x Mn l-x Se, Zn x Mn l-x Te, Cd x Mn l-x Se and Zn x Mn l-x Te systems wherein x is a value ranging from zero to one.
Claim 11
Dependent Claim
59 words
The nonlinear optical thin-film as claimed in claim 8, in which said group II - VI compound semiconductors are selected among a group of ZnS x Se l-x , Zn x Cd l-x S and Zn x Cd l-x S systems wherein x is a value ranging zero to one and said substrate is made of GaAs single crystal.
Claim 12
Dependent Claim
64 words
The nonlinear optical thin-film as claimed in claim 8, in which said group II - VI compound semiconductors are selected among a group of CdS x Se l-x , Zn x Cd l-x Se, Zn x Mn l-x Te and Cd x Mn l-x Se systems wherein x is a value ranging zero to one and said substrate is made of InP single crystal.
Claim 13
Dependent Claim
29 words
The nonlinear optical thin-film as claimed in any of claims 1 to 6, in which said superlattice thin film is formed with GaAs and ZnS x Se l-x .
Claim 14
Dependent Claim
31 words
The nonlinear optical thin-film as claimed in any of claims 1 to 6, in which said cover thin film is made of an inorganic glass material or an organic polymer compound.
References Cited (Backward Citations)
US4843032A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |