Patent US1243661A successfully refreshed from Google Patents.
US5079031A
Expired / Lapsed
US
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Apparatus and method for forming thin films
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-03-17
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Granted: 1992-01-07
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Expires: 2009-03-17
Abstract
Abstract An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Shinji Imatou
- 👤 Noriya Ishida
- 👤 Mari Sasaki
- 👤 Mitsunori Sakama
- 👤 Takeshi Fukada
- 👤 Naoki Hirose
- 👤 Mitsunori Tsuchiya
- 👤 Atsushi Kawano
- 👤 Kazuhisa Nakashita
- 👤 Junichi Takeyama
- 👤 Toshiji Hamatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:44
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H01J37/32009; H01J37/32082; H01J37/32532; H01J37/32568; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
A plasma processing apparatus comprising: a reaction chamber; a reactive gas feeding system; a vacuum pump for evacuating said reaction chamber; a pair of electrodes provided in said reaction chamber in order to define a reaction space therebetween; a substrate holder provided in said reaction space; a first power source for applying first AC electric energy between said electrodes, the frequency of said first enrgy being selected to be suitable for generating plasma gas therebetween; and a second power source for applying second AC electric enery to said substrate holder.
Claim 2
Dependent Claim
90 words
A plasma processing apparatus comprising: a reaction chamber; a reactive gas feeding system; a vacuum pump for evacuating said reaction chamber; a pair of electrodes provided in said reaction chamber in order to define a reaction space therebetween; a substrate holder provided in said reaction space; a first power source for applying first AC electric energy between said electrodes, the frequency of said first enrgy being selected to be suitable for generating plasma gas therebetween; and a second power source for applying second AC electric enery to said substrate holder.
Claim 3
Dependent Claim
44 words
The apparatus of claim 1 wherein said first power source is a transformer capable of outputting electric energy at 1 to 5000 MHz, one terminal of the secondary coil being connected to one of said electrodes and the other terminal to the other electrode.
Claim 4
Dependent Claim
37 words
The apparatus of claim 2 wherein one output terminal of said second power source is connected to a mid point of said secondary coil and the other terminal of said second secondary coil to said substrate holder.
Claim 5
Dependent Claim
17 words
The apparatus of claim 3 wherein the frequency of said second energy is 1 to 500 KHz.
Claim 6
Dependent Claim
11 words
The apparatus of claim 3 wherein said mid point is grounded.
Claim 7
Independent Claim
81 words
A method of depositing thin films on a substrate comprising: disposing a substrate to be coated in a vacuum chamber; introducing a reactive gas into said vacuum chamber at an appropriate pressure; producing a plasma gas in said reaction chamber by applying high frequency energy to a pair of electrodes between which said substrate has been disposed; applying alternating electric energy to said substrate; depositing the product of said reactive gas on said substrate by virtue of said alternating electric energy.
Claim 8
Independent Claim
81 words
A method of depositing thin films on a substrate comprising: disposing a substrate to be coated in a vacuum chamber; introducing a reactive gas into said vacuum chamber at an appropriate pressure; producing a plasma gas in said reaction chamber by applying high frequency energy to a pair of electrodes between which said substrate has been disposed; applying alternating electric energy to said substrate; depositing the product of said reactive gas on said substrate by virtue of said alternating electric energy.
Claim 9
Dependent Claim
25 words
The method of claim 6 wherein said plasma gas is generated by applying between said electrodes high frequency electric energy at 1 to 5000 MHz.
Claim 10
Dependent Claim
21 words
The method of claim 3 wherein the frequency of said alternating energy applied to said substrate is 1 to 500 KHz.
References Cited (Backward Citations)
US4582720A
Cited
EP0199527A1
Cited
US4844767A
Cited
JPS6289872A
Cited
US4859490A
Cited
US4891330A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |