Semiconductor memory device having improved memory cells provided with cylindrical type capacitors

Claim 2

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; and a conductive layer covering said dielectric film whereby the area of said first conductive portion and said conductive layer is increased.

Claim 3

A semiconductor memory device according to claim 1, wherein each of said second conductive portions is arranged along said outer-peripheral surface in said first direction.

Claim 4

A semiconductor memory device according to claim 2, wherein said first conductive portion has a predetermined number of said second conductive portions.

Claim 5

A semiconductor memory device according to claim 3, wherein said predetermined number is the same for all of said memory cells.

Claim 6

A semiconductor memory device according to claim 4, wherein said predetermined number is a predetermined even number.

Claim 7

A semiconductor memory device according to claim 5, wherein said predetermined even number is six.

Claim 8

A semiconductor memory device according to claim 2, including a first said memory cell, and a second said memory cell provided next to said first memory cell, wherein said first and second memory cells are aligned in a predetermined second direction with a predetermined first distance therebetween, said second conductive portions of said first memory cell extending between said second conductive portions of said second memory cell.

Claim 9

A semiconductor memory device according to claim 7, wherein said second conductive portion of said first memory cell is formed in a third direction crossing said second direction.

Claim 10

A semiconductor memory device according to claim 8, wherein said second conductive portion of said second memory cell is formed in a fourth direction crossing said second direction.

Claim 11

A semiconductor memory device according to claim 9, wherein the total amount of the length of said second conductive portion of said first memory cell in said third direction and the length of said second conductive portion of said second memory cell in said fourth direction is longer than said first distance.

Claim 12

A semiconductor memory device according to claim 10, wherein said third direction and said fourth direction are parallel to each other.

Claim 13

A semiconductor memory device according to claim 1, wherein said first conductive portion has an upper surface substantially parallel to said main surface.

Claim 14

A semiconductor memory device according to claim 12, wherein a concavity is formed in a central portion of said upper surface of said first conductive portion, said first conductive portion having an inner-peripheral surface parallel to said first direction besides said outer-peripheral surface, and said inner-peripheral surface defining the sidewall of said concavity.

Claim 15

A semiconductor memory device according to claim 13, wherein said upper surface of said first conductive portion has a first circular form.

Claim 16

A semiconductor memory device according to claim 14, wherein said concavity has a second circular form on said upper surface.

Claim 17

A semiconductor memory device according to claim 15, wherein said first circular form and said second circular form are concentric.

Claim 18

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a polygonal form.

Claim 19

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a polygonal form.

Claim 20

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a rectangular form.

Claim 21

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a rectangular form.

Claim 22

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a hexagonal form.

Claim 23

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having a hexagonal form.

Claim 24

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having an elliptical form.

Claim 25

A semiconductor memory device having a storage region having an arrangement of a plurality of unit memory cells formed on the main surface of a semiconductor substrate of a first conductivity type, wherein each of said memory cells comprises: a switching means formed on said main surface of said semiconductor substrate, and a passive element for signal retention connected to said switching means for retaining the electric charges transferred from said switching means, said switching means comprising: a first and a second conduction electrodes; and a gate electrode for controlling the conduction between said first and second conduction electrodes, said passive element for signal retention comprising: a first conductive portion having a generally columnar shape formed protruded from said main surface in a first direction away from said main surface, and electrically connected to said switching means, said first conductive portion having an outer-peripheral surface, and said first conductive portion having a surface feature comprising at least one concave region formed by two second conductive portions, located on and extending from said outer-peripheral surface of said first conductive portion; a dielectric film covering said surface of said first conductive portion including said surface feature; a conductive layer covering said dielectric film; said first conductive portion having an upper surface substantially parallel to said main surface; and said upper surface of said first conductive portion having an elliptical form.

Claim 26

A charge storage device formed as part of a memory cell on a semiconductor substrate having a main surface, comprising: a first conductive portion formed as a geometric structure extending perpendicular to the main surface of said substrate, having an outer surface perpendicular to said main surface of said substrate and an upper surface parallel to said main surface of said substrate; a second conductive portion formed by a plurality of fins extending from said outer surface of said geometric structure and formed along said outer surface of said geometric structure perpendicular to said main surface of said substrate; a dielectric layer covering said first conductive portion and said second conductive portion; and a conductive layer covering said dielectric layer whereby said plurality of fins provide additional storage capacity to said geometric structure.

Claim 27

A charge storage device formed as part of a memory cell on a semiconductor substrate having a main surface, comprising: a first conductive portion formed as a geometric structure extending perpendicular to the main surface of said substrate, having an outer surface perpendicular to said main surface of said substrate and an upper surface parallel to said main surface of said substrate; a second conductive portion formed by a plurality of fins extending from said outer surface of said geometric structure and formed along said outer surface of said geometric structure perpendicular to said main surface of said substrate; a dielectric layer covering said first conductive portion and said second conductive portion; and a conductive layer covering said dielectric layer whereby said plurality of fins provide additional storage capacity to said geometric structure.

Claim 28

The charge storage device of claim 21 further comprising a concavity in said upper surface of said geometric structure forming an inner surface of said first conductive portion, said inner surface being covered by said dielectric layer and said dielectric layer being covered by said conductive layer, whereby additional storage capacity is added to said geometric structure.

Claim 29

The storage device of claim 22 wherein said plurality of fins is an even number.

Claim 30

The charge storage device of claim 22 wherein said geometric structure is a regular geometric shape.

Claim 31

The charge storage device of claim 24 wherein said upper surface of said regular geometric structure is in the shape of a circle.

Claim 32

The charge storage device of claim 24 wherein said upper surface of said regular geometric structure is in the shape of an ellipse.

Claim 33

The charge storage device of claim 24 wherein the upper surface of said regular geometric structure is in the shape of a polygon.