Dark current-free multiquantum well superlattice infrared detector

Claim 2

A semiconductor photodetector, comprising: a plurality of quantum well layers and barrier layers alternately arranged in a periodic superlattice structure to absorb photons, said quantum well layers having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers having a thickness of from about 40 angstroms to about 300 angstroms; a blocking layer at one end of said periodic superlattice structure, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms; and said quantum well layers containing electrons having a bound state below the potential energy barriers of said barrier layers and said blocking layer and an excited state above said potential energy barriers of said barrier layers and said blocking layer, said thickness of said blocking layer being sufficient to prevent tunneling of electrons from said quantum wells through said potential energy barrier of said blocking layer.

Claim 3

The photodetector recited in claim 1, further including means for applying an electrical field across said periodic superlattice structure and said blocking layer.

Claim 4

The photodetector recited in claim 2, further including means of sensing an electrical signal in response to radiation incident on said superlattice structure.

Claim 5

The photodetector recited in claim 1, wherein said photodetector is an infrared photodetector and the energy gap between said bound state and said excited state is resonant with the energy of a preselected wavelength of infrared radiation.

Claim 6

The photodetector recited in claim 1, wherein said quantum well layers, said barrier layers, and said blocking layer are semiconductors compounds.

Claim 7

The photodetector recited in claim 5, wherein said quantum well layers are doped heavily n-type.

Claim 8

The photodetector recited in claim 5, wherein said semiconductor compound materials are selected from the group consisting of III-V, IV-IV and II-IV materials.

Claim 9

The photodetector recited in claim 1, further including a second blocking layer disposed at the end of said superlattice structure opposite said first blocking layer.

Claim 10

The photodetector recited in claim 2, wherein said biasing means induces the electrical field between first and second contact layers.

Claim 11

The photodetector recited in claim 9, wherein one of said contact layers is disposed on said blocking layer and further including a semi-insulating substrate on which said one of said contact layers is disposed.

Claim 12

The photodetector recited in claim 1, wherein said quantum well layers are GaAs, said barrier layers are AlGaAs and said blocking layer is AlGaAs.

Claim 13

The photodetector recited in claim 11, wherein said quantum well layers are doped n-type to between about 1×10 18 cm -3 and 5×10 18 cm -3 .

Claim 14

The photodetector recited in claim 1, further including a plurality of said photodetectors arranged in a focal plane array.

Claim 15

The photodetector recited in claim 4, wherein said energy spacing between said bound state and said excited state is approximately 100 meV and said preselected wavelength of infrared radiation is 12 μm.

Claim 16

A low dark current infrared photodetector, comprising: a plurality of interleaved quantum well layers and barrier layers forming a multiquantum well superlattice structure, said quantum well layers each having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers each having a thickness of from about 40 angstroms to about 300 angstroms, said superlattice structure having a predetermined resistance to a preselected electrical bias applied across said superlattice in the direction transverse to said layers; charge carriers confined in quantum wells in said quantum well layers, said charge carriers being resonant with radiation having a preselected wavelength such that said charge carriers are excited out of said quantum wells to an energy level above the conduction band edge of said barrier layers to decrease the resistance of said superlattice structure; and a blocking layer disposed on one end of said superlattice structure, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms which reduces tunneling of charge carriers in said superlattice to a greater extent than the individual barrier layers, thereby reducing said dark current of said photodetector.

Claim 17

A low dark current infrared photodetector, comprising: a plurality of interleaved quantum well layers and barrier layers forming a multiquantum well superlattice structure, said quantum well layers each having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers each having a thickness of from about 40 angstroms to about 300 angstroms, said superlattice structure having a predetermined resistance to a preselected electrical bias applied across said superlattice in the direction transverse to said layers; charge carriers confined in quantum wells in said quantum well layers, said charge carriers being resonant with radiation having a preselected wavelength such that said charge carriers are excited out of said quantum wells to an energy level above the conduction band edge of said barrier layers to decrease the resistance of said superlattice structure; and a blocking layer disposed on one end of said superlattice structure, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms which reduces tunneling of charge carriers in said superlattice to a greater extent than the individual barrier layers, thereby reducing said dark current of said photodetector.

Claim 18

The photodetector recited in claim 15, further including means for applying an electrical bias to said photodetector.

Claim 19

The photodetector recited in claim 15, further including means for sensing an electrical signal in response to radiation incident on said photodetector.

Claim 20

The photodetector recited in claim 15, wherein said preselected wavelength is long wavelength infrared radiation.

Claim 21

The photodetector recited in claim 15, wherein said quantum well layers, said barrier layers and said blocking layers are formed of compound semiconductor materials.

Claim 22

A semiconductor photodetector, comprising; a substrate of semi-insulating semiconductor material; a first contact layer of heavily doped n-type semiconductor material disposed on said substrate; a multiquantum well superlattice structure composed of a plurality of alternating quantum well layers and barrier layers disposed on said first contact layer, said quantum well layers having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers having a thickness of from about 40 angstroms to about 300 angstroms; a tunneling current blocking layer disposed on said multiquantum well superlattice, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms; said quantum well layers containing electrons having a bound state below the potential energy barriers of said barrier layers and said tunneling current blocking layer and an excited state above said potential energy of said barrier layers and said tunneling current blocking layer, said thickness of said tunneling current blocking layer being sufficient to prevent tunneling of electrons from said quantum wells through said potential energy barrier of said tunneling current blocking layer; and a second contact layer of heavily doped n-type semiconductor material disposed on said tunneling current blocking layer.

Claim 23

A semiconductor photodetector, comprising; a substrate of semi-insulating semiconductor material; a first contact layer of heavily doped n-type semiconductor material disposed on said substrate; a multiquantum well superlattice structure composed of a plurality of alternating quantum well layers and barrier layers disposed on said first contact layer, said quantum well layers having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers having a thickness of from about 40 angstroms to about 300 angstroms; a tunneling current blocking layer disposed on said multiquantum well superlattice, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms; said quantum well layers containing electrons having a bound state below the potential energy barriers of said barrier layers and said tunneling current blocking layer and an excited state above said potential energy of said barrier layers and said tunneling current blocking layer, said thickness of said tunneling current blocking layer being sufficient to prevent tunneling of electrons from said quantum wells through said potential energy barrier of said tunneling current blocking layer; and a second contact layer of heavily doped n-type semiconductor material disposed on said tunneling current blocking layer.

Claim 24

The photodetector recited in claim 20, further including means for applying an electrical bias between said contact layers.

Claim 25

The photodetector recited in claim 20, further including means for sensing an electrical signal in response to radiation of a preselected wavelength incident on said substrate.

Claim 26

The photodetector recited in claim 20, wherein said quantum well layers are heavily doped n-type GaAs, said barrier layers are intrinsic AlGaAs and said blocking layer is intrinsic AlGaAs.

Claim 27

The photodetector recited in claim 20, wherein said quantum well layers are doped n-type to a concentration of from about 1×10 18 to about 5×10 18 cm -3 .

Claim 28

A semiconductor photodetector comprising; a substrate of semi-insulating semiconductor material; a first contact layer of heavily doped n-type semiconductor material disposed on said substrate; a tunneling current blocking layer disposed on said first contact layer, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms; a multiquantum well superlattice structure composed of a plurality of alternating quantum well layers and barrier layers disposed on said tunneling current blocking layer, said quantum well layers having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers having a thickness of from about 40 angstroms to about 300 angstroms; said quantum well layers containing electrons having a bound state below the potential energy barriers of said barrier layers and said tunneling current blocking layer and an excited state above said potential energy barriers of said barrier layers and said tunneling current blocking layer, said thickness of said tunneling current blocking layer being sufficient to prevent tunneling of electrons from said quantum wells through said potential energy barrier of said tunneling current blocking layer; and a second contact layer of heavily doped n-type semiconductor material disposed on said tunneling current blocking layer.

Claim 29

A semiconductor photodetector comprising; a substrate of semi-insulating semiconductor material; a first contact layer of heavily doped n-type semiconductor material disposed on said substrate; a tunneling current blocking layer disposed on said first contact layer, said blocking layer having a thickness of from about 500 angstroms to about 2000 angstroms; a multiquantum well superlattice structure composed of a plurality of alternating quantum well layers and barrier layers disposed on said tunneling current blocking layer, said quantum well layers having a thickness of from about 20 angstroms to about 60 angstroms and said barrier layers having a thickness of from about 40 angstroms to about 300 angstroms; said quantum well layers containing electrons having a bound state below the potential energy barriers of said barrier layers and said tunneling current blocking layer and an excited state above said potential energy barriers of said barrier layers and said tunneling current blocking layer, said thickness of said tunneling current blocking layer being sufficient to prevent tunneling of electrons from said quantum wells through said potential energy barrier of said tunneling current blocking layer; and a second contact layer of heavily doped n-type semiconductor material disposed on said tunneling current blocking layer.

Claim 30

The photodetector recited in claim 25, further including means for sensing an electrical signal in response to radiation of a preselected wavelength incident on said substrate.

Claim 31

The photodetector recited in claim 25, wherein said quantum well layers are heavily doped n-type GaAs, said barrier layers are intrinsic AlGaAs and said blocking layer is intrinsic AlGaAs.

Claim 32

The photodetector recited in claim 25, wherein said quantum well layer has a dopant concentration of from about 1×10 18 to about 5×10 18 cm-3.