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US5076860A
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Algan compound semiconductor material
Assignee: Toshiba Corp
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Filing: 1989-09-29
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Granted: 1991-12-31
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Expires: 2009-09-29
Abstract
Abstract A compound semiconductor material includes Ga x Al 1-x N (wherein 0≦x≦1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga x Al 1-x N (wherein 0≦x≦1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga x Al 1-x N (wherein 0≦x≦1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.
Inventors
- 👤 Yasuo Ohba
- 👤 Toshihide Izumiya
- 👤 Ako Hatano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:07
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/34; H01S5/343; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/018; H10H20/811; H10H20/812; H01S5/34333; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/113
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
25 words
A compound semiconductor material comprising a Ga x Al 1-x N (wherein 0≦x≦1) containing B and P and having a zinc blend type crystal structure.
Claim 2
Dependent Claim
25 words
A compound semiconductor material comprising a Ga x Al 1-x N (wherein 0≦x≦1) containing B and P and having a zinc blend type crystal structure.
Claim 3
Dependent Claim
25 words
A compound semiconductor element comprising Ga x Al 1-x N layers (wherein 0≦x≦1) which constitute a p-n junction and have zinc blend type crystal structures.
Claim 4
Dependent Claim
25 words
A compound semiconductor element comprising Ga x Al 1-x N layers (wherein 0≦x≦1) which constitute a p-n junction and have zinc blend type crystal structures.
Claim 5
Dependent Claim
36 words
A compound semiconductor element comprising a heterojunction consisting of BP layer and Ga x Al 1-x N (wherein 0≦x≦1) layer, said Ga x Al 1-x N (wherein 0≦x≦1) layer having a zinc blend type crystal structure.
Claim 6
Dependent Claim
36 words
A compound semiconductor element comprising a heterojunction consisting of BP layer and Ga x Al 1-x N (wherein 0≦x≦1) layer, said Ga x Al 1-x N (wherein 0≦x≦1) layer having a zinc blend type crystal structure.
Claim 7
Dependent Claim
37 words
A compound semiconductor element comprising a superlattice layer consisting of BP layer and Ga x Al 1-x N (wherein 0≦x≦1) layers, said Ga x Al 1-x N (wherein 0≦x≦1) layer having a zinc blend type crystal structure.
Claim 8
Dependent Claim
37 words
A compound semiconductor element comprising a superlattice layer consisting of BP layer and Ga x Al 1-x N (wherein 0≦x≦1) layers, said Ga x Al 1-x N (wherein 0≦x≦1) layer having a zinc blend type crystal structure.
Claim 9
Dependent Claim
30 words
A compound semiconductor element comprising a Ga x Al y B 1-x-y N z P 1-z (wherein 0≦x, y, z≦1) mixed crystal layer having a zinc blend type crystal structure.
Claim 10
Dependent Claim
30 words
A compound semiconductor element comprising a Ga x Al y B 1-x-y N z P 1-z (wherein 0≦x, y, z≦1) mixed crystal layer having a zinc blend type crystal structure.
Claim 11
Dependent Claim
11 words
An element according to claim 5, wherein said element satisfies x+y≃z.
Claim 12
Dependent Claim
54 words
A compound semiconductor element comprising a superlattice layer or mixed crystal layer consisting of Ga a Al 1-a N and BP whose average composition formula is represented by Ga x Al y B 1-x-y N z P 1-z and whose composition satisfies x+y≃z and z≦0.8, said layer having a zinc blend type crystal structure.
Claim 13
Dependent Claim
54 words
A compound semiconductor element comprising a superlattice layer or mixed crystal layer consisting of Ga a Al 1-a N and BP whose average composition formula is represented by Ga x Al y B 1-x-y N z P 1-z and whose composition satisfies x+y≃z and z≦0.8, said layer having a zinc blend type crystal structure.
Claim 14
Dependent Claim
64 words
An element according to claim 7, wherein said superlattice layer or mixed crystal layer is formed on a substrate through a buffer layer consisting of a BP layer or a multilayer structure obtained by alternately stacking superlattice layers consisting of Ga a Al 1-a N and BP whose average composition is changed and Ga x Al y B 1-x-y N z P 1-z .
Claim 15
Dependent Claim
29 words
An element according to any one of claims 4, 5, or 7, wherein said superlattice layer or mixed crystal layer is formed on a Gap, SiC, or Si substrate.
Claim 16
Dependent Claim
44 words
A compound semiconductor element with at least one layer comprising Ga x Al 1-x N (wherein 0≦x≦1) containing B and P, wherein the crystal structure of each of said layers comprising said Ga x Al 1-x N is zinc blend type or Worzeite type.
Claim 17
Dependent Claim
44 words
A compound semiconductor element with at least one layer comprising Ga x Al 1-x N (wherein 0≦x≦1) containing B and P, wherein the crystal structure of each of said layers comprising said Ga x Al 1-x N is zinc blend type or Worzeite type.
Claim 18
Dependent Claim
23 words
A compound semiconductor element comprising Ga x Al 1-x N (wherein 0≦x≦1) containing B and P and having a Worzeite type crystal structure.
Claim 19
Dependent Claim
23 words
A compound semiconductor element comprising Ga x Al 1-x N (wherein 0≦x≦1) containing B and P and having a Worzeite type crystal structure.
Claim 20
Dependent Claim
31 words
A compound semiconductor element comprising a Ga x Al 1-x N layer wherein 0≦x≦1) containing B and P and having a zinc blend type and having a Worzeite type crystal structure.
Claim 21
Dependent Claim
31 words
A compound semiconductor element comprising a Ga x Al 1-x N layer wherein 0≦x≦1) containing B and P and having a zinc blend type and having a Worzeite type crystal structure.
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