Detector interface device

Claim 1

A method for forming an array of detector elements directly upon a detector interface device the method comprising the steps of: (a) disposing an encapsulated seed crystal within a cavity formed within a surface of a substrate; (b) forming a glass layer upon the surface of the substrate, the glass layer having an aperture formed therein, the aperture being disposed above the seed crystal; (c) graphotaxially growing a single crystalline layer from the seed crystal across the glass layer to form a detector element support layer upon which infrared detector elements may be formed; (d) forming an array of detector elements upon the detector element support layer; (e) forming a plurality of conductive bumps upon a surface of the substrate, the plurality of conductive bumps suitable for electrically interfacing the detector elements to external circuitry.

Claim 2

A method for forming an array of detector elements directly upon a detector interface device the method comprising the steps of: (a) disposing an encapsulated seed crystal within a cavity formed within a surface of a substrate; (b) forming a glass layer upon the surface of the substrate, the glass layer having an aperture formed therein, the aperture being disposed above the seed crystal; (c) graphotaxially growing a single crystalline layer from the seed crystal across the glass layer to form a detector element support layer upon which infrared detector elements may be formed; (d) forming an array of detector elements upon the detector element support layer; (e) forming a plurality of conductive bumps upon a surface of the substrate, the plurality of conductive bumps suitable for electrically interfacing the detector elements to external circuitry.

Claim 5

A method for forming an array of infrared detector elements directly upon a detector interface device, the method comprising the steps of: (a) disposing a substrate having at least one cavity formed therein within a sealable container; (b) filling the container with a single crystalline material of a first type such that the single crystalline material will flow into the cavities formed within the substrate When the single crystalline material of a first type is melted; (c) reducing the pressure within the container to a pressure less than atmospheric pressure; (d) sealing the container; (e) heating the container to a temperature greater than the melting point of the single crystalline material and lower than the melting point of the substrate to melt the single crystalline material; (f) cooling the container through a temperature gradient to permit the crystallization of the single crystalline material; (g) cutting the any excess single crystalline material from the substrate such that substantially only the single crystalline material formed within the cavities remains in contact with the substrate; (h) polishing the surface of the substrate upon which the cavities are disposed; (i) forming conductive conduits upon the surface of the substrate to define a common detector element electrode grid; (j) forming first layers of photosensitive material of a first type over the single crystalline material which crystallized within the cavities; and (k) forming second layers of photosensitive material of a second type substantially over the first layers of photosensitive material of a first type to form an array of individual photosensitive detector elements.

Claim 6

A method for forming an array of infrared detector elements directly upon a detector interface device, the method comprising the steps of: (a) disposing a substrate having at least one cavity formed therein within a sealable container; (b) filling the container with a single crystalline material of a first type such that the single crystalline material will flow into the cavities formed within the substrate When the single crystalline material of a first type is melted; (c) reducing the pressure within the container to a pressure less than atmospheric pressure; (d) sealing the container; (e) heating the container to a temperature greater than the melting point of the single crystalline material and lower than the melting point of the substrate to melt the single crystalline material; (f) cooling the container through a temperature gradient to permit the crystallization of the single crystalline material; (g) cutting the any excess single crystalline material from the substrate such that substantially only the single crystalline material formed within the cavities remains in contact with the substrate; (h) polishing the surface of the substrate upon which the cavities are disposed; (i) forming conductive conduits upon the surface of the substrate to define a common detector element electrode grid; (j) forming first layers of photosensitive material of a first type over the single crystalline material which crystallized within the cavities; and (k) forming second layers of photosensitive material of a second type substantially over the first layers of photosensitive material of a first type to form an array of individual photosensitive detector elements.