Patent US5073512A successfully refreshed from Google Patents.
US5073512A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region
Assignee: NEC Electronics Corp
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Filing: 1990-04-20
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Granted: 1991-12-17
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Expires: 2010-04-20
Abstract
Abstract On a semiconductor substrate, a thin insulating film to be used as a gate insulating film, a thin polysilicon film and a thick mask layer are formed in the order and an opening for gate electrode formation is formed in the mask layer. After an ion implantation of impurities having the same conductivity type as that of the substrate is performed thereto through the opening to form, in the substrate, an impurity region having the same conductivity type as and impurity density larger than that of the substrate, the opening is filled with electrically conductive material. Thereafter, the mask layer is removed and an exposed first polysilicon film is removed to form a gate electrode comprising the conductive material and an underlying portion of the polysilicon film. Then, source region and drain region are formed in self-aligned manner with respect to the gate electrode.
Inventors
- 👤 Akira Yoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0225; H10D30/0217; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/026
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
278 words
A method of manufacturing an insulated gate field effect transistor, comprising the steps of: forming a thin insulating film on a major surface of a semiconductor substrate of a first conductivity type to form a gate insulating film; forming a thin first polycrystalline silicon film on said insulating film; forming a mask layer on said first polycrystalline silicon film and forming an opening in said mask layer; ion-implanting said substrate with impurities of said first conductivity type through said insulating film using said mask layer as a mask to form a first impurity region of said first conductivity type and having a high impurity density in said substrate beneath said opening; forming continuously a conductive film within said opening so as to fill said opening and on an upper surface of said mask layer; removing said conductive film except a portion within said opening to expose an upper surface of said mask layer and to leave within said opening; removing said mask layer entirely; etching away selectively said first polycrystalline silicone film except a portion thereof beneath said conductive film pattern having configuration determined by said opening to form a gate electrode by said remaining portion of said first polycrystalline silicon film and said conductive film pattern; implanting impurities of a second conductivity type opposite to said first conductivity type in said semiconductor substrate using said gate electrode as a mask to form source and drain regions of said second conductivity type in said semiconductor substrate; and wherein said first impurity region is formed by said ion implantation of said first conductivity type with side walls being left on side faces of said opening of said mask layer.
Claim 2
Independent Claim
278 words
A method of manufacturing an insulated gate field effect transistor, comprising the steps of: forming a thin insulating film on a major surface of a semiconductor substrate of a first conductivity type to form a gate insulating film; forming a thin first polycrystalline silicon film on said insulating film; forming a mask layer on said first polycrystalline silicon film and forming an opening in said mask layer; ion-implanting said substrate with impurities of said first conductivity type through said insulating film using said mask layer as a mask to form a first impurity region of said first conductivity type and having a high impurity density in said substrate beneath said opening; forming continuously a conductive film within said opening so as to fill said opening and on an upper surface of said mask layer; removing said conductive film except a portion within said opening to expose an upper surface of said mask layer and to leave within said opening; removing said mask layer entirely; etching away selectively said first polycrystalline silicone film except a portion thereof beneath said conductive film pattern having configuration determined by said opening to form a gate electrode by said remaining portion of said first polycrystalline silicon film and said conductive film pattern; implanting impurities of a second conductivity type opposite to said first conductivity type in said semiconductor substrate using said gate electrode as a mask to form source and drain regions of said second conductivity type in said semiconductor substrate; and wherein said first impurity region is formed by said ion implantation of said first conductivity type with side walls being left on side faces of said opening of said mask layer.
Claim 3
Dependent Claim
69 words
The method as claimed in claim 1 further comprising the steps of removing said side walls after said first impurity region is formed and implanting impurity ions of said second conductivity type to said semiconductor substrate to form a second impurity region for controlling threshold voltage of said transistor in a channel region of said transistor between said first impurity region and said major surface of said semiconductor substrate.
Claim 4
Independent Claim
292 words
A method of manufacturing an insulated gate field effect transistor, comprising the steps of: forming a thin insulating film on a major surface of a semiconductor substrate of a first conductivity type to form a gate insulating film; forming a thin first polycrystalline silicon film on said insulating film; forming a mask layer on said first polycrystalline silicon film and forming an opening in said mask layer; ion-implanting said substrate with impurities of said first conductivity type through said insulating film using said mask layer as a mask to form a first impurity region of said first conductivity type and having a high impurity density in said substrate beneath said opening; forming continuously a conductive film within said opening so as to fill said opening and on an upper surface of said mask layer; removing said conductive film except a portion within said opening to expose an upper surface of said mask layer and to leave within said opening; removing said mask layer entirely; etching away selectively said first polycrystalline silicon film except a portion thereof beneath said conductive film pattern having configuration determined by said opening to form a gate electrode by said remaining portion of said first polycrystalline silicon film and said conductive film pattern; implanting impurities of a second conductivity type opposite to said first conductivity type in said semiconductor substrate using said gate electrode as a mask to form source and drain regions of said second conductivity type in said semiconductor substrate; and wherein said opening is filled with said conductive film with side walls being formed on side faces of said opening of said mask layer and said etching of said first polycrystalline silicon film is performed after said mask layer and said side walls are removed.
Claim 5
Independent Claim
292 words
A method of manufacturing an insulated gate field effect transistor, comprising the steps of: forming a thin insulating film on a major surface of a semiconductor substrate of a first conductivity type to form a gate insulating film; forming a thin first polycrystalline silicon film on said insulating film; forming a mask layer on said first polycrystalline silicon film and forming an opening in said mask layer; ion-implanting said substrate with impurities of said first conductivity type through said insulating film using said mask layer as a mask to form a first impurity region of said first conductivity type and having a high impurity density in said substrate beneath said opening; forming continuously a conductive film within said opening so as to fill said opening and on an upper surface of said mask layer; removing said conductive film except a portion within said opening to expose an upper surface of said mask layer and to leave within said opening; removing said mask layer entirely; etching away selectively said first polycrystalline silicon film except a portion thereof beneath said conductive film pattern having configuration determined by said opening to form a gate electrode by said remaining portion of said first polycrystalline silicon film and said conductive film pattern; implanting impurities of a second conductivity type opposite to said first conductivity type in said semiconductor substrate using said gate electrode as a mask to form source and drain regions of said second conductivity type in said semiconductor substrate; and wherein said opening is filled with said conductive film with side walls being formed on side faces of said opening of said mask layer and said etching of said first polycrystalline silicon film is performed after said mask layer and said side walls are removed.
Claim 6
Dependent Claim
19 words
The method as claimed in claim 3, wherein said conductive film is composed of a second polycrystalline silicon film.
Claim 7
Dependent Claim
31 words
The method as claimed in claim 3, wherein said conductive film is composed of a film of high melting point metal and/or a silicide film of a high melting point metal.
Claim 8
Dependent Claim
40 words
The method as claimed in claim 3, wherein said insulating film is composed of a thermal silicon oxide film, said mask layer is composed of a silicon oxide layer and said side walls are composed of a silicon nitride film.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-12-16 | 1995-06-17 | 1995-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-16 | 1999-06-17 | 1999-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-16 | 2003-06-17 | 2003-12-17 | $7700.00 | Window Closed / Lapsed |