US5072264A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diamond transistor and method of manufacture thereof
Assignee: Individual
•
Filing: 1989-05-24
•
Granted: 1991-12-10
•
Expires: 2009-05-24
Abstract
Abstract The invention provides a process for manufacturing a field-effect transistor on a p-type diamond substrate. The process includes depositing a layer of p' doped amorphous silicon or germanium on the surface of the substrate and depositing a layer of a first metal over the p + layer. Portions of the layer of the first metal and the p+ layer are selectively removed to define source and drain regions of the transistor. A gate region is defined by an exposed portion of the substrate between the source and drain regions. A layer of a wide-bandgap insulating material is deposited over the source, gate and drain regions and then selectively removed to allow metallic contacts to be applied to the source, gate and drain regions.
Inventors
- 👤 Barbara L. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
61 words
A field effect transistor characterized in that it comprises a p-type diamond substrate including spaced apart source and drain regions at the surface of the substrate defined by zones of non-diamond p + material with respective ohmic or quasi-ohmic source and drain contacts applied thereto, and a gate electrode over the surface of the substrate between the source and drain regions.
Claim 2
Dependent Claim
61 words
A field effect transistor characterized in that it comprises a p-type diamond substrate including spaced apart source and drain regions at the surface of the substrate defined by zones of non-diamond p + material with respective ohmic or quasi-ohmic source and drain contacts applied thereto, and a gate electrode over the surface of the substrate between the source and drain regions.
Claim 3
Dependent Claim
35 words
A field effect transistor according to claim 1 characterised in that the gate electrode is separated from the surface of the substrate by an insulating layer of a wide-bandgap material, to provide a MISFET configuration.
Claim 4
Dependent Claim
28 words
A field effect transistor according to claim 1 characterised in that the gate electrode is applied directly to the surface of the substrate to provide a MESFET configuration.
Claim 5
Dependent Claim
98 words
A field effect transistor according to claim 1 characterised in that the non-diamond p + material is p + doped amorphous semiconductor material and the source and drain contacts are quasi-ohmic contacts formed by the deposition of the p + doped amorphous semiconductor material on the substrate with a metal layer being deposited on the p + doped semiconductor material, portions of the metal layer and the layer of p + amorphous semiconductor material being removed selectively to define the spaced apart source and drain regions, with a gate region being defined between the source and drain regions.
Claim 6
Dependent Claim
36 words
A field effect transistor according to claim 4 wherein said metal layer is a metal selected from the group consisting of aluminum, molybdenum, molybdenum/tantalum alloy, chrome, titanium, nichrome, titanium/tungsten alloy, palladium, platinum and an aluminum/silicon alloy.
Claim 7
Dependent Claim
14 words
A field effect transistor according to claim 4 wherein said semiconductor material is silicon.
Claim 8
Dependent Claim
14 words
A field effect transistor according to claim 4 wherein said semiconductor material is germanium.
References Cited (Backward Citations)
US4072545A
Cited
JPS58141572A
Cited
JPS59208821A
Cited
JPS60246627A
Cited
JPS61207078A
Cited
US4893155A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-09 | 1995-06-10 | 1995-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-09 | 1999-06-10 | 1999-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-09 | 2003-06-10 | 2003-12-10 | $7700.00 | Window Closed / Lapsed |