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US5072262A
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Electric-electronic device including polyimide thin film
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1989-10-10
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Granted: 1991-12-10
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Expires: 2009-10-10
Abstract
Abstract An electric-electronic device including a polyimide thin film is disclosed, said polyimide thin film having a thickness of not more than 1000 Å and a dielectric breakdown strength of not less than 1×10 6 V/cm. The device has excellent performance properties ascribed to high heat resistance, mechanical strength, chemical resistance and insulating properties of the polyimide thin film.
Inventors
- 👤 Masakazu Uekita
- 👤 Hiroshi Awaji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; H05; H05B; H05B33/00; H05B33/12; H05B33/22; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/60; H10D64/66; H10D64/68; H10N; H10N70/00; H10P14/63; H10P14/6326; H10P14/6342; H10P14/6344
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
37 words
An electric-electronic device comprising a heat-resistant polyimide thin film formed by a Langmuir-Blodgett method and having a thickness of not more than 1000 Å , and a dielectric breakdown strength of not less than 1×10 6 V/cm.
Claim 2
Dependent Claim
37 words
An electric-electronic device comprising a heat-resistant polyimide thin film formed by a Langmuir-Blodgett method and having a thickness of not more than 1000 Å , and a dielectric breakdown strength of not less than 1×10 6 V/cm.
Claim 3
Dependent Claim
33 words
An electric-electronic device as in claim 1, wherein said polyimide thin film is obtained by building up an amphiphilic polyimide precursor on a substrate by a Langmuir-Blodgett process and imidizing the built-up film.
Claim 4
Dependent Claim
23 words
An electric-electronic device as in claim 1, wherein said device has a metal/insulating film/metal structure, said insulating film being the polyimide thin film.
Claim 5
Dependent Claim
23 words
An electric-electronic device as in claim 1, wherein said device has a metal/insulating film/semiconductor structure, said insulating film being the polyimide thin film.
Claim 6
Dependent Claim
215 words
An electric-electronic device comprising a polyimide thin film obtained by building up a film of an amphiphilic polyimide precursor on a substrate by a Langmuir-Blodgett process and imidizing the built-up film, wherein said amphiphilic polyimide precursor is represented by formula (I) ##STR42## wherein R 1 is a tetravalent group having at least 2 carbon atoms, R 2 is a bivalent group having at least 2 carbon atoms, and each of R 3 , R 4 , R 5 and R 6 is independently selected from the group consisting of: (1) hydrogen atom; and (2) a monovalent group having 1 to 30 carbon atoms selected from the group consisting of an aliphatic group, an alicyclic group, an aromatic group, a group in which an aliphatic group is combined with an aromatic group, a group in which an aliphatic group is combined with an alicyclic group, said monovalent group being unsubstituted or substituted by a halogen atom, nitro group, amino group, cyano group, methoxy group or acetoxy group, provided that at least one of R 3 , R 4 , R 5 and R 6 has at least 12 carbon atoms, wherein said polyimide thin film has a thickness of not more than 1000 Å and a dielectric breakdown strength of not less than 1×10 6 V/cm.
Claim 7
Dependent Claim
215 words
An electric-electronic device comprising a polyimide thin film obtained by building up a film of an amphiphilic polyimide precursor on a substrate by a Langmuir-Blodgett process and imidizing the built-up film, wherein said amphiphilic polyimide precursor is represented by formula (I) ##STR42## wherein R 1 is a tetravalent group having at least 2 carbon atoms, R 2 is a bivalent group having at least 2 carbon atoms, and each of R 3 , R 4 , R 5 and R 6 is independently selected from the group consisting of: (1) hydrogen atom; and (2) a monovalent group having 1 to 30 carbon atoms selected from the group consisting of an aliphatic group, an alicyclic group, an aromatic group, a group in which an aliphatic group is combined with an aromatic group, a group in which an aliphatic group is combined with an alicyclic group, said monovalent group being unsubstituted or substituted by a halogen atom, nitro group, amino group, cyano group, methoxy group or acetoxy group, provided that at least one of R 3 , R 4 , R 5 and R 6 has at least 12 carbon atoms, wherein said polyimide thin film has a thickness of not more than 1000 Å and a dielectric breakdown strength of not less than 1×10 6 V/cm.
Claim 8
Dependent Claim
23 words
An electric-electronic device as in claim 5, wherein said device has a metal/insulating film/metal structure, said insulating film being the polyimide thin film.
Claim 9
Dependent Claim
23 words
An electric-electronic device as in claim 5, wherein said device has a metal/insulating film/semiconductor structure, said insulating film being the polyimide thin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-09 | 1995-06-10 | 1995-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-09 | 1999-06-10 | 1999-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-09 | 2003-06-10 | 2003-12-10 | $7700.00 | Window Closed / Lapsed |