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US5071832A
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Field effect type josephson transistor
Assignee: Seiko Epson Corp
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Filing: 1989-10-19
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Granted: 1991-12-10
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Expires: 2009-10-19
Abstract
Abstract A field effect type Josephson transistor in which a source electrode and a drain electrode are provided with a gap therebetween, a tunnel film is provided in the gap between the source electrode and drain electrode, and a gate electrode for field-controlling the tunnel current through the tunnel film is provided. The transistor of such structure is suitable for mass-production and is utilized in manufacture of integrated circuits.
Inventors
- 👤 Seiichi Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:34
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/128; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/825; Y10S505/873; Y10S505/874
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A field effect type Josephson transistor comprising: a source electrode and a drain electrode, wherein each of said electrodes is composed of superconducting material, said electrodes being separated from one another by a gap and each having a side wall bounding said gap; two tunnel films each disposed in said gap on a respective side wall, a substrate electrode disposed in said gap and interposed between said tunnel films; a gate electrode disposed for controlling a current flowing through said gap between said source and drain electrodes; and a dielectric film disposed between said gap and said gate electrode.
Claim 2
Dependent Claim
99 words
A field effect type Josephson transistor comprising: a source electrode and a drain electrode, wherein each of said electrodes is composed of superconducting material, said electrodes being separated from one another by a gap and each having a side wall bounding said gap; two tunnel films each disposed in said gap on a respective side wall, a substrate electrode disposed in said gap and interposed between said tunnel films; a gate electrode disposed for controlling a current flowing through said gap between said source and drain electrodes; and a dielectric film disposed between said gap and said gate electrode.
Claim 3
Dependent Claim
40 words
A transistor as defined in claim 1 wherein each of said electrodes is composed of superconductor material and each said tunnel film is composed of a dielectric material and has a thickness of the order of several times 10 Å.
Claim 4
Dependent Claim
61 words
A field effect type Josephson transistor comprising: an insulating substrate; a gate electrode formed on said substrate; a gate insulating film covering said gate electrode; source and drain electrodes formed of superconducting material disposed on said gate insulating film and separated from one another by a tunnel gap located above said gate electrode; and a tunnel film disposed within said gap.
Claim 5
Dependent Claim
61 words
A field effect type Josephson transistor comprising: an insulating substrate; a gate electrode formed on said substrate; a gate insulating film covering said gate electrode; source and drain electrodes formed of superconducting material disposed on said gate insulating film and separated from one another by a tunnel gap located above said gate electrode; and a tunnel film disposed within said gap.
Claim 6
Dependent Claim
38 words
A transistor as defined in claim 3 wherein each of said electrodes is composed of a superconductor material and said tunnel film is composed of a dielectric material and has a thickness of the order of 2 nm.
Claim 7
Dependent Claim
89 words
A field effect type Josephson transistor comprising: an insulating substrate; two electrodes of a ceramic high-temperature superconductor disposed on said substrate, said electrodes being separated from one another by a tunnel gap; a tunnel insulating film disposed in said gap; a dielectric film covering said gap; and a gate electrode formed on said dielectric film at a location above said gap, wherein said dielectric film is a gate insulating film interposed between said gate electrode and said tunnel gap and having a thickness of about 0.01 to 0.1μ .
Claim 8
Dependent Claim
89 words
A field effect type Josephson transistor comprising: an insulating substrate; two electrodes of a ceramic high-temperature superconductor disposed on said substrate, said electrodes being separated from one another by a tunnel gap; a tunnel insulating film disposed in said gap; a dielectric film covering said gap; and a gate electrode formed on said dielectric film at a location above said gap, wherein said dielectric film is a gate insulating film interposed between said gate electrode and said tunnel gap and having a thickness of about 0.01 to 0.1μ .
Claim 9
Dependent Claim
30 words
A transistor as defined in claim 5, wherein said tunnel insulating film is composed of a dielectric material and has a thickness of the order of 0.002 to 0.1μ .
Claim 10
Dependent Claim
65 words
A field effect type Josephson transistor comprising: an insulating substrate; a superconductor film disposed on said substrate and separated into two parts lying in a common plane and constituting source and drain electrodes separated by a tunnel gap; and a gate electrode disposed in the common plane and spaced from said gap in a direction transverse to the direction of separation between said two parts.
Claim 11
Dependent Claim
65 words
A field effect type Josephson transistor comprising: an insulating substrate; a superconductor film disposed on said substrate and separated into two parts lying in a common plane and constituting source and drain electrodes separated by a tunnel gap; and a gate electrode disposed in the common plane and spaced from said gap in a direction transverse to the direction of separation between said two parts.
Claim 12
Dependent Claim
34 words
A transistor as defined in claim 7 wherein said film is separated into at least three parts separated by at least two tunnel gaps, and said gate electrode is disposed adjacent each said gap.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-09 | 1995-06-10 | 1995-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-09 | 1999-06-10 | 1999-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-09 | 2003-06-10 | 2003-12-10 | $7700.00 | Window Closed / Lapsed |