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US5070070A
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High temperature superconducting memory storage device and cryotron
Assignee: EIDP Inc
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Filing: 1988-03-09
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Granted: 1991-12-03
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Expires: 2008-03-09
Abstract
Abstract Binary memory storage devices and cryotrons utilizing superconducting crystals exhibiting an onset of superconductivity and a relatively weak flux exclusion at a temperature T1 and the onset of relatively strong flux exclusion at T2, where T1>T2>77K, are controlled by dc magnetic fields. The preferred superconducting crystals have the formula Bi 2 Sr 3-z Ca z Cu 2 O 8+w wherein z is from about 0.1 to about 0.9 and w is greater than zero but less than about 1.
Inventors
- 👤 Thomas R. Askew
- 👤 Richard B. Flippen
- 👤 Munirpallam A. Subramanian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:44
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/30; H10N60/35; G; G11; G11C; G11C11/00; G11C11/21; G11C11/44; H10N60/80; H10N60/85; H10N60/855; H10N60/857; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/775; Y10S505/776; Y10S505/782
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
96 words
A binary memory storage device comprising a crystal of a compound having the formula Bi.sub.2 Sr.sub.3-z Ca.sub.z Cu.sub.2 O.sub.8+w wherein z is from about 0.4 to about 0.8 and o<w<l, means for cooling said crystal to a temperature between about 77K and about 96K, means for applying and removing a dc magnetic field of about 10 Oe (800 A/m) to about 200 Oe to said crystal, means for applying an alternating magnetic field having a maximum strength of about 1 Oe to said crystal, and means for detecting the amount of flux excluded by said crystal.
Claim 2
Dependent Claim
96 words
A binary memory storage device comprising a crystal of a compound having the formula Bi.sub.2 Sr.sub.3-z Ca.sub.z Cu.sub.2 O.sub.8+w wherein z is from about 0.4 to about 0.8 and o<w<l, means for cooling said crystal to a temperature between about 77K and about 96K, means for applying and removing a dc magnetic field of about 10 Oe (800 A/m) to about 200 Oe to said crystal, means for applying an alternating magnetic field having a maximum strength of about 1 Oe to said crystal, and means for detecting the amount of flux excluded by said crystal.
Claim 3
Dependent Claim
19 words
The binary memory storage device of claim 1 wherein said dc magnetic field is about 30 Oe (2400 A/m).
Claim 4
Dependent Claim
76 words
A cryotron comprising a crystal of a compound having the formula Bi 2 Sr 3-z Ca z Cu 2 O 8+w wherein z is from about 0.4 to about 0.8 and o<w<l, means for passing an electrical current through said crystal, means for cooling said crystal to a temperature between about 77K and about 96K, and means for applying and removing a dc magnetic field of about 10 Oe to about 200 Oe to said crystal.
Claim 5
Dependent Claim
76 words
A cryotron comprising a crystal of a compound having the formula Bi 2 Sr 3-z Ca z Cu 2 O 8+w wherein z is from about 0.4 to about 0.8 and o<w<l, means for passing an electrical current through said crystal, means for cooling said crystal to a temperature between about 77K and about 96K, and means for applying and removing a dc magnetic field of about 10 Oe to about 200 Oe to said crystal.
Claim 6
Dependent Claim
14 words
The cryotron of claim 3 wherein said dc magnetic field is about 30 Oe.
References Cited (Backward Citations)
US4164030A
Cited
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