US5068868A
Expired / Lapsed
US
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Vertical cavity surface emitting lasers with electrically conducting mirrors
Assignee: Nokia Bell Labs
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Filing: 1990-05-21
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Granted: 1991-11-26
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Expires: 2010-05-21
Abstract
Abstract This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the oder of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.
Inventors
- 👤 Dennis G. Deppe
- 👤 Leonard C. Feldman
- 👤 Rose F. Kopf
- 👤 Erdmann F. Schubert
- 👤 Li Wei Tu
- 👤 George J. Zydzik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:46
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/05; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18375; H01S5/18377; H01S5/18386; H01S5/18394
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
169 words
In a semiconductor vertical cavity surface emitting laser comprising at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related Group III-V and Group II-VI compound semiconductor, a plurality of layers including an active region which generates optical radiation and a rear mirror which reflects said radiation, said laser further comprises a front mirror of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and a rear electrode for applying, in unity with the front mirror, excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation, wherein said front mirror comprises a layer of highly reflective metal deposited in a thickness permitting transmission of optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 2
Dependent Claim
169 words
In a semiconductor vertical cavity surface emitting laser comprising at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related Group III-V and Group II-VI compound semiconductor, a plurality of layers including an active region which generates optical radiation and a rear mirror which reflects said radiation, said laser further comprises a front mirror of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and a rear electrode for applying, in unity with the front mirror, excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation, wherein said front mirror comprises a layer of highly reflective metal deposited in a thickness permitting transmission of optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 3
Dependent Claim
13 words
The laser of claim 1, in which said semi-transparent metal layer comprises silver.
Claim 4
Dependent Claim
15 words
The laser of claim 2, in which said Ag layer is about 40 nm thick.
Claim 5
Dependent Claim
32 words
The laser of claim 1, in which said rear mirror is a multilayer distributed Bragg reflection mirror comprising from 10 to 40 pairs of quarter wave layers with different index of refraction.
Claim 6
Dependent Claim
38 words
The laser of claim 4, in which said active region comprises GaAs and said rear mirror comprises pairs of quarter wave layers selected from AlAs and GaAs and from AlAs and Al 0 .05 Ga 0 .95 As.
Claim 7
Dependent Claim
42 words
The laser of claim 1, in which a multilayer distributed Bragg reflection (DBR) structure comprising from 2 to 20 pairs of quarter wave layers with different index of refraction within each pair is interposed between the active region and the front mirror.
Claim 8
Dependent Claim
30 words
The laser of claim 6, in which said DBR structure comprises pairs of layers selected from AlAs and GaAs or from AlAs and Al 0 .05 Ga 0 .95 As.
Claim 9
Dependent Claim
22 words
The vertical cavity laser of claim 1 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.
Claim 10
Dependent Claim
166 words
In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and II-VI compound semiconductors, a plurality of layers comprising in an ascending order from a semiconductor substrate a multilayer distributed Bragg reflective (DBR) rear mirror upon the substrate, an active region which generates an optical radiation, said active region being confined between a first and a second confining layers, a highly doped contacting layer, and a front mirror comprising a layer of a metal which forms a non-alloyed ohmic contact to said contacting layer and serves simultaneously as a front electrode of the laser, said metal layer being of highly reflective metal deposited in a thickness permitting transmission of said optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 11
Dependent Claim
166 words
In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and II-VI compound semiconductors, a plurality of layers comprising in an ascending order from a semiconductor substrate a multilayer distributed Bragg reflective (DBR) rear mirror upon the substrate, an active region which generates an optical radiation, said active region being confined between a first and a second confining layers, a highly doped contacting layer, and a front mirror comprising a layer of a metal which forms a non-alloyed ohmic contact to said contacting layer and serves simultaneously as a front electrode of the laser, said metal layer being of highly reflective metal deposited in a thickness permitting transmission of said optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 12
Dependent Claim
11 words
The laser of claim 9, in which said metal is silver.
Claim 13
Dependent Claim
15 words
The laser of claim 9, in which said Ag layer is about 40 nm thick.
Claim 14
Dependent Claim
35 words
The laser of claim 9, in which said rear mirror is a multilayer distributed Bragg reflection mirror comprising from 10 to 40 pairs of quarter wave layers with different index of refraction in each pair.
Claim 15
Dependent Claim
38 words
The laser of claim 12, in which said active region is GaAs and said rear mirror comprises pairs of quarter wave layers selected from AlAs and GaAs and from AlAs and Al 0 .05 Ga 0 .95 As.
Claim 16
Dependent Claim
38 words
The laser of claim 9 in which a multilayer distributed Bragg reflection structure comprising from 2 to 20 pairs of quarter wave layers with different index of refraction is interposed between the active region and the front mirror.
Claim 17
Dependent Claim
30 words
The laser of claim 14, in which said DBR structure comprises pairs of layers selected from AlAs and GaAs and from AlAs and Al 0 .05 Ga 0 .95 As.
Claim 18
Dependent Claim
20 words
The laser of claim 9 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.
Claim 19
Dependent Claim
165 words
In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and group II-VI compound semiconductors, a plurality of layers including an active region which generates optical radiation, a rear mirror which reflects said radiation, a front mirror which partially reflects and partially transmits said radiation in direction perpendicular to the active region, the front mirror being of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and a rear electrode for applying in unity with the front mirror an excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation, in which said front mirror comprises a layer of highly reflective metal consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 20
Dependent Claim
165 words
In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and group II-VI compound semiconductors, a plurality of layers including an active region which generates optical radiation, a rear mirror which reflects said radiation, a front mirror which partially reflects and partially transmits said radiation in direction perpendicular to the active region, the front mirror being of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and a rear electrode for applying in unity with the front mirror an excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation, in which said front mirror comprises a layer of highly reflective metal consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.
Claim 21
Dependent Claim
13 words
The laser of claim 17, in which said front mirror metal comprises silver.
Claim 22
Dependent Claim
15 words
The laser of claim 18, in which said Ag layer is about 40 nm thick.
Claim 23
Dependent Claim
22 words
The vertical cavity laser of claim 17 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.
References Cited (Backward Citations)
US4949351A
Cited
US4943970A
Cited
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