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US5066751A Expired / Lapsed US ⏱️ 0.0 years remaining

Resist material for energy beam lithography and method of using the same

Assignee: Fujitsu Semiconductor Ltd
•
Filing: 1990-01-22
•
Granted: 1991-11-19
•
Expires: 2010-01-22
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Abstract

Abstract A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH 2 CO 2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are α-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and α-chloroacrylonitrile.

Inventors

  • 👤 Akiko Kotachi
  • 👤 Satoshi Takechi
  • 👤 Yuko Nakamura

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 01:26
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 27 words
A resist material comprising a copolymer of silicon containing methacrylic ester the and acrylic ester, alpha-position of the acrylic ester being substituted by an electron attracting group.
Claim 2
Dependent Claim 27 words
A resist material comprising a copolymer of silicon containing methacrylic ester the and acrylic ester, alpha-position of the acrylic ester being substituted by an electron attracting group.
Claim 3
Dependent Claim 25 words
A resist material comprising a copolymer of silicon containing methacrylic ester and acrylonitrile, the alpha-position of the acrylonitrile being substituted by an electron attracting group.
Claim 4
Dependent Claim 25 words
A resist material comprising a copolymer of silicon containing methacrylic ester and acrylonitrile, the alpha-position of the acrylonitrile being substituted by an electron attracting group.
Claim 5
Dependent Claim 41 words
A resist material as recited in claims 1 or 2, wherein said electron attracting group is a selected one of a trifluoromethyl group (CF 3 ), a halogen group, a cyano group (CN) and a CH 2 CO 2 R group.
Claim 6
Dependent Claim 21 words
A resist material as recited in claim 1, wherein said silicon containing methacrylic ester is trimethylsilylmethyl methacrylate, shown as follows: ##STR9##
Claim 7
Dependent Claim 21 words
A resist material as recited in claim 1, wherein said silicon containing methacrylic ester is (diphenylmethylsilyl)methyl methacrylate, shown as follows: ##STR10##
Claim 8
Dependent Claim 30 words
A resist material as recited in claim 1, wherein said acrylic ester, the alpha-position thereof being substituted by an electron attracting group, is α-trifluoromethyl (2,2,2-trifluoroethyl) acrylate, shown as follows: ##STR11##
Claim 9
Dependent Claim 27 words
A resist material as recited in claim 2, wherein said acrylonitrile, the alpha-position thereof being substituted by an electron attracting group, is α-chloroacrylonitrile shown as follows: ##STR12##
Claim 10
Dependent Claim 38 words
A resist material as recited in claim 2, wherein said electron attracting group is any one selected among a trifluoromethyl group (CF 3 ), a halogen group, a cyano group (CN) and a CH 2 CO R group.
Claim 11
Dependent Claim 20 words
A resist material as recited in claim 2, wherein said silicon containing methacrylic ester is trimethylsilylmethyl methacrylate shown as follows:
Claim 12
Dependent Claim 20 words
A resist material as recited in claim 2, wherein said silicon containing methacrylic ester is (diphenylmethylsilyl)methyl methacrylate shown as follows:

References Cited (Backward Citations)

JPS59197036A Cited
JPS62229141A Cited
EP0271708A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-11-18 1995-05-20 1995-11-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-11-18 1999-05-20 1999-11-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-11-18 2003-05-20 2003-11-19 $7700.00 Window Closed / Lapsed

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